The Experts below are selected from a list of 6273 Experts worldwide ranked by ideXlab platform

Kenichiro Tanaka - One of the best experts on this subject based on the ideXlab platform.

  • new Microfabrication Technique on a submicrometer scale by synchrotron radiation excited etching
    Journal of Vacuum Science & Technology B, 1995
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Masao Nakao, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation‐excited etching of Si, SiC, and WO3 has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.

  • New Microfabrication Technique on a submicrometer scale by synchrotron radiation‐excited etching
    Journal of Vacuum Science & Technology B, 1995
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Masao Nakao, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation‐excited etching of Si, SiC, and WO3 has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.

  • new Microfabrication Technique by synchrotron radiation excited etching use of noncontact mask on a submicrometer scale
    Applied Physics Letters, 1994
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation (SR)‐excited etching of Si using a noncontact mask on a submicrometer scale has been investigated. The blank pattern of the noncontact mask was replicated on the etched surface and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial photointensity distribution of SR on the sample determined the depth profile of the etched part of the sample.

Mark Hyttinen - One of the best experts on this subject based on the ideXlab platform.

  • Demonstration of a High Power, Wideband 220-GHz Traveling Wave Amplifier Fabricated by UV-LIGA
    IEEE Transactions on Electron Devices, 2014
    Co-Authors: Colin D. Joye, Alan M. Cook, Jeffrey P. Calame, Khanh T. Nguyen, Edward L. Wright, Dean E. Pershing, Alexander N. Vlasov, Igor A. Chernyavskiy, Takuji Kimura, Mark Hyttinen
    Abstract:

    We present the first vacuum electronic traveling wave amplifier to incorporate an interaction circuit fabricated by ultraviolet (UV) photolithography and electroforming, demonstrating over 60 W of output power at 214.5 GHz from a 12.1 kV, 118 mA electron beam. The tube also achieved an instantaneous bandwidth of ~15 GHz in G-band in the small signal regime. The all-copper circuit was fabricated in two layers using a UV-transparent polymer monofilament embedded in the photoresist to form the beam tunnel prior to electroforming. Effects arising from fabrication errors and target tolerances are discussed. This Microfabrication Technique and demonstration paves the way for a new era of vacuum electron devices that could extend into the 1-2 THz range with advances in high-current-density electron guns.

Shingo Terakado - One of the best experts on this subject based on the ideXlab platform.

  • new Microfabrication Technique on a submicrometer scale by synchrotron radiation excited etching
    Journal of Vacuum Science & Technology B, 1995
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Masao Nakao, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation‐excited etching of Si, SiC, and WO3 has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.

  • New Microfabrication Technique on a submicrometer scale by synchrotron radiation‐excited etching
    Journal of Vacuum Science & Technology B, 1995
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Masao Nakao, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation‐excited etching of Si, SiC, and WO3 has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.

  • new Microfabrication Technique by synchrotron radiation excited etching use of noncontact mask on a submicrometer scale
    Applied Physics Letters, 1994
    Co-Authors: Shingo Terakado, Takashi Goto, Masayoshi Ogura, Kazuhiro Kaneda, Osamu Kitamura, Shigeo Suzuki, Kenichiro Tanaka
    Abstract:

    Synchrotron radiation (SR)‐excited etching of Si using a noncontact mask on a submicrometer scale has been investigated. The blank pattern of the noncontact mask was replicated on the etched surface and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial photointensity distribution of SR on the sample determined the depth profile of the etched part of the sample.

Colin D. Joye - One of the best experts on this subject based on the ideXlab platform.

  • Development of a 233 GHz high-gain traveling wave amplifier
    IEEE International Vacuum Electronics Conference, 2014
    Co-Authors: Colin D. Joye, Alan M. Cook, Jeffrey P. Calame, Khanh T. Nguyen, Edward L. Wright, Jeremy M. Hanna, Dean E. Pershing
    Abstract:

    We present development plans for a 233 GHz, serpentine waveguide vacuum electron amplifier employing an embedded monofilament Microfabrication Technique based on UV-LIGA. Output power from the circuit is predicted to exceed 140 W in conjunction with a newly developed electron gun at 20 kV and 124 mA. Design, fabrication and integration progress will be discussed.

  • Demonstration of a High Power, Wideband 220-GHz Traveling Wave Amplifier Fabricated by UV-LIGA
    IEEE Transactions on Electron Devices, 2014
    Co-Authors: Colin D. Joye, Alan M. Cook, Jeffrey P. Calame, Khanh T. Nguyen, Edward L. Wright, Dean E. Pershing, Alexander N. Vlasov, Igor A. Chernyavskiy, Takuji Kimura, Mark Hyttinen
    Abstract:

    We present the first vacuum electronic traveling wave amplifier to incorporate an interaction circuit fabricated by ultraviolet (UV) photolithography and electroforming, demonstrating over 60 W of output power at 214.5 GHz from a 12.1 kV, 118 mA electron beam. The tube also achieved an instantaneous bandwidth of ~15 GHz in G-band in the small signal regime. The all-copper circuit was fabricated in two layers using a UV-transparent polymer monofilament embedded in the photoresist to form the beam tunnel prior to electroforming. Effects arising from fabrication errors and target tolerances are discussed. This Microfabrication Technique and demonstration paves the way for a new era of vacuum electron devices that could extend into the 1-2 THz range with advances in high-current-density electron guns.

  • Demonstration of a high power, wideband 220 GHz serpentine waveguide amplifier fabricated by UV-LIGA
    2013 IEEE 14th International Vacuum Electronics Conference (IVEC), 2013
    Co-Authors: Colin D. Joye, Alan M. Cook, Jeffrey P. Calame, Khanh T. Nguyen, Edward L. Wright, Alexander N. Vlasov, Igor A. Chernyavskiy, Takuji Kimura, Baruch Levush
    Abstract:

    We present the hot test results of a 220 GHz, serpentine waveguide vacuum electron amplifier showcasing a novel embedded monofilament Microfabrication Technique based on UV-LIGA. The instantaneous operating bandwidth exceeds 15 GHz and the small signal gain of the circuit is over 14 dB. By varying the voltage slightly, an operating bandwidth of almost 40 GHz is realizable with a minimum circuit gain of 7 dB across the band. A maximum power of just over 60 W was obtained at the output flange of the device, corresponding to a power of almost 80 W generated in the circuit.

D V Kerns - One of the best experts on this subject based on the ideXlab platform.

  • Vacuum field emission integrated differential amplifier
    25th International Vacuum Nanoelectronics Conference, 2012
    Co-Authors: W. P. Kang, J.l. Davidson, J H Huang, S. Raina, D V Kerns
    Abstract:

    This paper reports the development of an integrated vacuum field emission transistor differential amplifier (diff-amp) utilizing nanodiamond emitters. The device was fabricated by a dual-mask self-aligned mold transfer Technique using standard silicon Microfabrication Technique in conjunction with chemical vapor deposited nanodiamond. The emission current of the transistor pair was validated by the Fowler-Nordheim equation. Well-matched field emission transistor characteristics and large common-mode rejection ratio of 55 dB were obtained, suggesting the capability of the device to reject common-mode noises and to amplify the information contained in differential signals.

  • Performance characteristics of nanocrystalline diamond vacuum field emission transistor array
    Journal of Applied Physics, 2012
    Co-Authors: S. H. Hsu, J H Huang, J.l. Davidson, W. P. Kang, D V Kerns
    Abstract:

    Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer Microfabrication Technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723833]