The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform
Yves Idzerda - One of the best experts on this subject based on the ideXlab platform.
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Single crystal Fe1−xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1−xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga conte...
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Single crystal Fe1-xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1-xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga contents. (4) The cubic anisotropy is close to zero (∼0.06 kOe for FeGa(A)) and becomes negative for higher concentration of Ga content in the samples, and (5) the damping increases with increase in Ga concentration. © 2014 AIP Publishing LLC.
Bijoy K. Kuanr - One of the best experts on this subject based on the ideXlab platform.
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Single crystal Fe1−xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1−xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga conte...
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Single crystal Fe1-xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1-xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga contents. (4) The cubic anisotropy is close to zero (∼0.06 kOe for FeGa(A)) and becomes negative for higher concentration of Ga content in the samples, and (5) the damping increases with increase in Ga concentration. © 2014 AIP Publishing LLC.
R. E. Camley - One of the best experts on this subject based on the ideXlab platform.
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Single crystal Fe1−xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1−xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga conte...
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Single crystal Fe1-xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1-xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga contents. (4) The cubic anisotropy is close to zero (∼0.06 kOe for FeGa(A)) and becomes negative for higher concentration of Ga content in the samples, and (5) the damping increases with increase in Ga concentration. © 2014 AIP Publishing LLC.
Z. Celinski - One of the best experts on this subject based on the ideXlab platform.
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Single crystal Fe1−xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1−xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga conte...
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Single crystal Fe1-xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1-xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga contents. (4) The cubic anisotropy is close to zero (∼0.06 kOe for FeGa(A)) and becomes negative for higher concentration of Ga content in the samples, and (5) the damping increases with increase in Ga concentration. © 2014 AIP Publishing LLC.
Adam Mcclure - One of the best experts on this subject based on the ideXlab platform.
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Single crystal Fe1−xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1−xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga conte...
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Single crystal Fe1-xGax thin films for monolithic Microwave Devices
Journal of Applied Physics, 2014Co-Authors: Bijoy K. Kuanr, R. E. Camley, Z. Celinski, Adam Mcclure, Yves IdzerdaAbstract:Modern, high frequency, Microwave Devices for communications technologies can be made with thin ferromagnetic films with narrow Microwave resonance linewidths. Recently, there has been interest in magnetostrictive materials where the material constants can change substantially with stresses and applied magnetic fields. We report the development of single crystal thin (20 nm thick) magnetostrictive films of Fe1-xGax (x = 0.20 FeGa(A), 0.23 FeGa(B), 0.28 FeGa(C) on GaAs(001) substrates and on their use in prototype Microwave Devices. These Galfenol films have a narrower linewidth than any previously reported similar thin films. We fabricate and characterize novel microstrip-based monolithic Microwave Devices using Galfenol thin films as an active element. We find a number of important features: (1) There is a large absorption (up to 30 dB/cm) at the resonance frequency. (2) The linewidth of the device is narrow ∼1.5 GHz. (3) The saturation magnetization of the samples decreases with the increase in Ga contents. (4) The cubic anisotropy is close to zero (∼0.06 kOe for FeGa(A)) and becomes negative for higher concentration of Ga content in the samples, and (5) the damping increases with increase in Ga concentration. © 2014 AIP Publishing LLC.
