The Experts below are selected from a list of 12543 Experts worldwide ranked by ideXlab platform

Hsiaochin Chen - One of the best experts on this subject based on the ideXlab platform.

  • 3 10 ghz ultra wideband low noise amplifier utilizing Miller Effect and inductive shunt shunt feedback technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Hsiaochin Chen, Tao Wang, Sheyshi Lu
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

  • 3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Yu-tso Lin, Hsiaochin Chen, Tao Wang, Yo-sheng Lin
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Sheyshi Lu - One of the best experts on this subject based on the ideXlab platform.

  • 3 10 ghz ultra wideband low noise amplifier utilizing Miller Effect and inductive shunt shunt feedback technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Hsiaochin Chen, Tao Wang, Sheyshi Lu
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Yo-sheng Lin - One of the best experts on this subject based on the ideXlab platform.

  • 3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Yu-tso Lin, Hsiaochin Chen, Tao Wang, Yo-sheng Lin
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Tao Wang - One of the best experts on this subject based on the ideXlab platform.

  • 3 10 ghz ultra wideband low noise amplifier utilizing Miller Effect and inductive shunt shunt feedback technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Hsiaochin Chen, Tao Wang, Sheyshi Lu
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

  • 3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Yu-tso Lin, Hsiaochin Chen, Tao Wang, Yo-sheng Lin
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller Effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Alberto Valdes-garcia - One of the best experts on this subject based on the ideXlab platform.

  • Continuous True-Time Delay Phase Shifter Using Distributed Inductive and Capacitive Miller Effect
    IEEE Transactions on Microwave Theory and Techniques, 2019
    Co-Authors: Alberto Valdes-garcia
    Abstract:

    A new true-time delay phase shifter concept is proposed exploiting the distributed Miller Effect in coupled transmission lines. Simultaneous change in Miller capacitance and inductance controlled by a single analog voltage changes the propagation delay of a transmission line with constant input impedance and insertion loss. The true-time delay line feature of the proposed architecture accommodates a wide bandwidth signal without group delay distortion. A theoretical framework for understanding Miller inductance from voltage and current duality and the distributed Miller Effect using coupled wave equations is presented. As a proof of concept, a four-stage tunable delay line with a high-speed phase modulation capability was fabricated in a 45-nm RF SOI CMOS process and occupies an active area of 0.28 mm2. The measured IC demonstrates a broadband tunable true-time delay with a measured group delay tuning range of 18 ± 1 ps from 11 to 24 GHz. The measured phase shift ranges are 173° and 182° with insertion losses of 10.6 ± 0.7 dB and 11.6 ± 1 dB at 28 and 30 GHz, respectively. The measured dc power consumption is 22 mW from a 1.2-V supply.

  • Tunable Delay Line Using Distributed Inductive/Capacitive Miller Effect
    2018 IEEE MTT-S International Microwave Symposium - IMS, 2018
    Co-Authors: Wooram Lee, Alberto Valdes-garcia
    Abstract:

    The Miller Effect of capacitance amplification is extended to coupled transmission lines to design a new type of tunable delay line. Simultaneous variable amplification of inductance and capacitance provides a wide tuning range with constant input characteristic impedance and constant insertion loss. As a proof-of-concept, an integrated four-stage tunable delay line with a high speed phase modulation capability is implemented. The measurement shows 180° tuning range at 30 GHz with the average insertion loss of −11.6 dB and the DC power consumption of 22 mW in a 45-nm SOI CMOS technology.