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Mantu K. Hudait - One of the best experts on this subject based on the ideXlab platform.
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Mixed-Anion GaAs1−ySby graded buffer heterogeneously integrated on Si by molecular beam epitaxy
Applied Physics Express, 2015Co-Authors: Mantu K. Hudait, Yan Zhu, Patrick S. Goley, Michael Clavel, Nikhil JainAbstract:The growth, strain relaxation, and defect properties of a step-graded Mixed-Anion GaAs1−ySby buffer with a lattice misfit of >12% on a 6° off-cut (100) Si substrate grown by molecular beam epitaxy (MBE) have been investigated. This metamorphic graded buffer exhibited efficient strain relaxation and low threading dislocation densities of ≤107 cm−2 in the investigated range of misfits. High-resolution X-ray diffraction measurement demonstrated nearly ideal strain relaxation behavior with a surface rms roughness of ~3.5 nm, which is attributed in part to dislocation glide. Thus, MBE-grown GaAs1−ySby Anion-graded buffers are a promising "virtual substrate" technology for extending the performance and application of 6.1 A device technology.
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Growth, strain relaxation properties and high-κ dielectric integration of Mixed-Anion GaAs1-ySby metamorphic materials
Journal of Applied Physics, 2014Co-Authors: Yizheng Zhu, Michael Clavel, Patrick S. Goley, Mantu K. HudaitAbstract:Mixed-Anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-κ dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band ...
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Comparison of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
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comparison of Mixed Anion inasyp1 y and Mixed cation inxal1 xas metamorphic buffers grown by molecular beam epitaxy on 100 inp substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
Steven A. Ringel - One of the best experts on this subject based on the ideXlab platform.
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Comparison of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
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comparison of Mixed Anion inasyp1 y and Mixed cation inxal1 xas metamorphic buffers grown by molecular beam epitaxy on 100 inp substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
Tokiko Uchida - One of the best experts on this subject based on the ideXlab platform.
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Preparation and properties of Mixed Anion TTF conductors
Synthetic Metals, 1999Co-Authors: Masagi Mizuno, Hisashi Kokubo, Kazumasa Honda, Hikari Nakayama, Tokiko UchidaAbstract:Twenty one TTF conductors with Mixed Anions were prepared. The effect of disordered Anion structure on conduction mechanism and on structural phase change are discussed.
Jonathan P. Pelz - One of the best experts on this subject based on the ideXlab platform.
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Comparison of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
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comparison of Mixed Anion inasyp1 y and Mixed cation inxal1 xas metamorphic buffers grown by molecular beam epitaxy on 100 inp substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
C. Tivarus - One of the best experts on this subject based on the ideXlab platform.
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Comparison of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...
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comparison of Mixed Anion inasyp1 y and Mixed cation inxal1 xas metamorphic buffers grown by molecular beam epitaxy on 100 inp substrates
Journal of Applied Physics, 2004Co-Authors: Mantu K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus, Jonathan P. Pelz, Steven A. RingelAbstract:The structural, morphological, and defect properties of Mixed Anion, InAsyP1−y and Mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...