The Experts below are selected from a list of 22401 Experts worldwide ranked by ideXlab platform
Emmanuel Dubois - One of the best experts on this subject based on the ideXlab platform.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation is investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model become critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
Christophe Krzeminski - One of the best experts on this subject based on the ideXlab platform.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation is investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model become critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
Shinichi Hirano - One of the best experts on this subject based on the ideXlab platform.
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ex situ evaluation of Nanometer Range gold coating on stainless steel substrate for automotive polymer electrolyte membrane fuel cell bipolar plate
Journal of Power Sources, 2010Co-Authors: A Kumar, Mark Stephen Ricketts, Shinichi HiranoAbstract:Abstract The bipolar plate in polymer electrolyte membrane (PEM) fuel cell helps to feed reactant gases to the membrane electrode assembly (MEA) and collect current from the MEA. To facilitate these functions, the bipolar plate material should exhibit excellent electrical conductivity and corrosion resistance under fuel cell operating conditions, and simultaneously be of low-cost to meet commercialization enabling targets for automotive fuel cells. In the present work, we focus on the benchmarking of 10 nm gold coated SS316L (a.k.a. Au Nanoclad ® ) bipolar plate material through ex situ tests, which is provided by Daido Steel (Japan). The use of Nanometer Range Au coatings help to retain the noble properties of gold while significantly reducing the cost of the bipolar plate. The area specific resistance of the flat sample is 0.9 mΩ cm 2 while that for the formed bipolar plate is 6.3 mΩ cm 2 at compaction force of 60 N cm −2 . The corrosion current density was less than 1 μA cm −2 at 0.8 V/NHE with air sparge simulating cathodic conditions. Additionally, gold coated SS316L showed anodic passivation of SS316L, thereby exhibiting robustness towards coating defects including surface scratches that may originate during the manufacturing of the bipolar plate. These series of ex situ tests indicate that 10 nm gold coated SS316L has good potential to be considered for commercial bipolar plates in automotive fuel cell stack.
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ex situ evaluation of Nanometer Range gold coating on stainless steel substrate for automotive polymer electrolyte membrane fuel cell bipolar plate
Journal of Power Sources, 2010Co-Authors: A Kumar, Mark Stephen Ricketts, Shinichi HiranoAbstract:Abstract The bipolar plate in polymer electrolyte membrane (PEM) fuel cell helps to feed reactant gases to the membrane electrode assembly (MEA) and collect current from the MEA. To facilitate these functions, the bipolar plate material should exhibit excellent electrical conductivity and corrosion resistance under fuel cell operating conditions, and simultaneously be of low-cost to meet commercialization enabling targets for automotive fuel cells. In the present work, we focus on the benchmarking of 10 nm gold coated SS316L (a.k.a. Au Nanoclad ® ) bipolar plate material through ex situ tests, which is provided by Daido Steel (Japan). The use of Nanometer Range Au coatings help to retain the noble properties of gold while significantly reducing the cost of the bipolar plate. The area specific resistance of the flat sample is 0.9 mΩ cm 2 while that for the formed bipolar plate is 6.3 mΩ cm 2 at compaction force of 60 N cm −2 . The corrosion current density was less than 1 μA cm −2 at 0.8 V/NHE with air sparge simulating cathodic conditions. Additionally, gold coated SS316L showed anodic passivation of SS316L, thereby exhibiting robustness towards coating defects including surface scratches that may originate during the manufacturing of the bipolar plate. These series of ex situ tests indicate that 10 nm gold coated SS316L has good potential to be considered for commercial bipolar plates in automotive fuel cell stack.
Guilhem Larrieu - One of the best experts on this subject based on the ideXlab platform.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation is investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model become critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
Evelyne Lampin - One of the best experts on this subject based on the ideXlab platform.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model becomes critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
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Silicon dry oxidation kinetics at low temperature in the nanometric Range: Modeling and experiment
Journal of Applied Physics, 2007Co-Authors: Christophe Krzeminski, Guilhem Larrieu, J. Penaud, Evelyne Lampin, Emmanuel DuboisAbstract:Kinetics of silicon dry oxidation is investigated theoretically and experimentally at low temperature in the Nanometer Range where the limits of the Deal and Grove model become critical. Based on a fine control of the oxidation process conditions, experiments allow the investigation of the growth kinetics of nanometric oxide layer. The theoretical model is formulated using a reaction rate approach. In this framework, the oxide thickness is estimated with the evolution of the various species during the reaction. Standard oxidation models and the reaction rate approach are confronted with these experiments. The interest of the reaction rate approach to improve silicon oxidation modeling in the Nanometer Range is clearly demonstrated.
