The Experts below are selected from a list of 129 Experts worldwide ranked by ideXlab platform
T. Mizutani - One of the best experts on this subject based on the ideXlab platform.
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Negative-Resistance device using organic thin films
Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials (Cat. No.03CH37417), 2003Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:A new Negative-Resistance device which had a structure of anode/insulating layer/hole transport layer/cathode was fabricated by thermal CVD and vacuum deposition. Its current-voltage characteristics at room temperature showed a remarkable Negative Resistance. A current peak was observed around 5/spl sim/6V with increasing voltage. It decreased with increasing the width of an insulating layer. The peak voltage also increased with increasing the ionization potential of dye or the barrier of hole tunneling. The current peak decreased with the difference between Fermi level of the anode and ionization potential of insulating layer. These suggest that the Negative Resistance around 5/spl sim/6V may be explained by the tunneling phenomenon.
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Negative-Resistance device using organic-dye-doped polymer film
Thin Solid Films, 1998Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:Abstract In order to develop a new Negative-Resistance device, a single-layer device of organic-dye-doped insulating polymer was fabricated by dipping. The current–voltage characteristics at room temperature showed remarkable Negative Resistance. The ratio of peak current to valley current was 23 or higher and the difference between peak and valley voltages was 2 V. The Negative Resistance did not depend much on the combination of insulating polymer matrix and dye dopant or on temperature. This suggests that the Negative Resistance is caused by tunneling transport of holes or electrons. Two possible models are considered for the origin of the Negative Resistance. One is based on the polarization formed by holes or electrons trapped in the dye molecule. The other is based on the tunneling at the interface between electrode and dye molecules.
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Negative-Resistance characteristics of organic-dye-doped thin-polymer-film device
Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 1997Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:In order to develop a new Negative Resistance device, a single-layer device of organic-dye-doped insulating polymer has been fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable Negative Resistance, which did not depend greatly on the combination of insulating polymers and dopants. In addition, the ratio of peak current to valley current was 23 or higher and the difference 2 V. The origin of the Negative Resistance is discussed in terms of tunneling transport of holes or electrons through the bulk of the dye-doped polymer.
Masahiro Okuda - One of the best experts on this subject based on the ideXlab platform.
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Resonant Tunneling in an STM and its Negative Resistance
Shinku, 1993Co-Authors: Hirokazu Inaba, Masahiro Okuda, Yoshikazu Yagi, Shaw Ehara, T. TakagiAbstract:In the analysis of scanning tunneling microscopy (STM), a one-dimensional model is used to predict the tunneling spectrum of a quantum well structure. Investigations of the current-voltage characteristics for the double potential barrier structure are presented for a heterostructure (GaAs/AlAs/GaAs) -vacuum-STM tip (GaAs) system. The dependences of resonant tunneling current-voltage characteristics on the double-barrier structures are shown for the peak voltage of Negative Resistance and the shape of Negative Resistance.
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Negative Resistance in an organic thin film
Modern Physics Letters B, 1992Co-Authors: S. Ehara, T. Takagi, T. Yoshida, Hirokazu Inaba, Hiroyoshi Naito, Masahiro OkudaAbstract:The Negative Resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This Negative Resistance may be understood by the theory of a molecular resonance tunneling effect.
A. Kawamoto - One of the best experts on this subject based on the ideXlab platform.
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Negative-Resistance device using organic thin films
Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials (Cat. No.03CH37417), 2003Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:A new Negative-Resistance device which had a structure of anode/insulating layer/hole transport layer/cathode was fabricated by thermal CVD and vacuum deposition. Its current-voltage characteristics at room temperature showed a remarkable Negative Resistance. A current peak was observed around 5/spl sim/6V with increasing voltage. It decreased with increasing the width of an insulating layer. The peak voltage also increased with increasing the ionization potential of dye or the barrier of hole tunneling. The current peak decreased with the difference between Fermi level of the anode and ionization potential of insulating layer. These suggest that the Negative Resistance around 5/spl sim/6V may be explained by the tunneling phenomenon.
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Negative-Resistance device using organic-dye-doped polymer film
Thin Solid Films, 1998Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:Abstract In order to develop a new Negative-Resistance device, a single-layer device of organic-dye-doped insulating polymer was fabricated by dipping. The current–voltage characteristics at room temperature showed remarkable Negative Resistance. The ratio of peak current to valley current was 23 or higher and the difference between peak and valley voltages was 2 V. The Negative Resistance did not depend much on the combination of insulating polymer matrix and dye dopant or on temperature. This suggests that the Negative Resistance is caused by tunneling transport of holes or electrons. Two possible models are considered for the origin of the Negative Resistance. One is based on the polarization formed by holes or electrons trapped in the dye molecule. The other is based on the tunneling at the interface between electrode and dye molecules.
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Negative-Resistance characteristics of organic-dye-doped thin-polymer-film device
Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 1997Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:In order to develop a new Negative Resistance device, a single-layer device of organic-dye-doped insulating polymer has been fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable Negative Resistance, which did not depend greatly on the combination of insulating polymers and dopants. In addition, the ratio of peak current to valley current was 23 or higher and the difference 2 V. The origin of the Negative Resistance is discussed in terms of tunneling transport of holes or electrons through the bulk of the dye-doped polymer.
Y. Suzuoki - One of the best experts on this subject based on the ideXlab platform.
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Negative-Resistance device using organic thin films
Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials (Cat. No.03CH37417), 2003Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:A new Negative-Resistance device which had a structure of anode/insulating layer/hole transport layer/cathode was fabricated by thermal CVD and vacuum deposition. Its current-voltage characteristics at room temperature showed a remarkable Negative Resistance. A current peak was observed around 5/spl sim/6V with increasing voltage. It decreased with increasing the width of an insulating layer. The peak voltage also increased with increasing the ionization potential of dye or the barrier of hole tunneling. The current peak decreased with the difference between Fermi level of the anode and ionization potential of insulating layer. These suggest that the Negative Resistance around 5/spl sim/6V may be explained by the tunneling phenomenon.
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Negative-Resistance device using organic-dye-doped polymer film
Thin Solid Films, 1998Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:Abstract In order to develop a new Negative-Resistance device, a single-layer device of organic-dye-doped insulating polymer was fabricated by dipping. The current–voltage characteristics at room temperature showed remarkable Negative Resistance. The ratio of peak current to valley current was 23 or higher and the difference between peak and valley voltages was 2 V. The Negative Resistance did not depend much on the combination of insulating polymer matrix and dye dopant or on temperature. This suggests that the Negative Resistance is caused by tunneling transport of holes or electrons. Two possible models are considered for the origin of the Negative Resistance. One is based on the polarization formed by holes or electrons trapped in the dye molecule. The other is based on the tunneling at the interface between electrode and dye molecules.
-
Negative-Resistance characteristics of organic-dye-doped thin-polymer-film device
Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 1997Co-Authors: A. Kawamoto, Y. Suzuoki, T. MizutaniAbstract:In order to develop a new Negative Resistance device, a single-layer device of organic-dye-doped insulating polymer has been fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable Negative Resistance, which did not depend greatly on the combination of insulating polymers and dopants. In addition, the ratio of peak current to valley current was 23 or higher and the difference 2 V. The origin of the Negative Resistance is discussed in terms of tunneling transport of holes or electrons through the bulk of the dye-doped polymer.
S. Ehara - One of the best experts on this subject based on the ideXlab platform.
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Negative Resistance in an organic thin film
Modern Physics Letters B, 1992Co-Authors: S. Ehara, T. Takagi, T. Yoshida, Hirokazu Inaba, Hiroyoshi Naito, Masahiro OkudaAbstract:The Negative Resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This Negative Resistance may be understood by the theory of a molecular resonance tunneling effect.
