The Experts below are selected from a list of 12 Experts worldwide ranked by ideXlab platform
I P Konovalov - One of the best experts on this subject based on the ideXlab platform.
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Application of the three-Mode operation of a broad-band laser in intracavity dispersion frequency-domain spectroscopy
Quantum Electronics, 2000Co-Authors: I P KonovalovAbstract:The beats of a three-Mode dye laser, containing a component with a frequency close to the difference between Neighbouring Mode spacings, the technical fluctuations of which cancel out, are considered. The aim is to develop a laser spectroscopic method with a detection limit of the order of 10-10 — 10-11 cm-1 Hz-1/2, determined by the natural frequency fluctuations and by the spectral resolution limited by the homogeneous width of the resonance line. Use was made of the unequal changes in two Mode spacings of an equidistant three-Mode spectrum, caused by the dispersion of the absorption line of an intracavity absorber, and of the detection of the resulting difference frequency.
Hiroshi Okamoto - One of the best experts on this subject based on the ideXlab platform.
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Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD
Semiconductor Science and Technology, 1990Co-Authors: Akihiko Kasukawa, N. Matsumoto, I. J. Murgatroyd, Toru Fukushima, S. Kashiwa, Hiroshi OkamotoAbstract:1.3 mu m GaInAsP/InP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without Mode hopping in a single longitudinal Mode over a wide temperature range Delta T (5-45 degrees C). The temperature coefficient of the wavelength in this range was 0.8 AA deg-1, which was as small as that of the distributed feedback laser. At the extremes of this temperature range Mode hopping occurred. The wavelength did not shift into the nearest Neighbouring Mode but into one which was separated by several Mode spacings. An interference between the fundamental and higher-order transverse Modes might be the underlying mechanism.
Akihiko Kasukawa - One of the best experts on this subject based on the ideXlab platform.
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Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD
Semiconductor Science and Technology, 1990Co-Authors: Akihiko Kasukawa, N. Matsumoto, I. J. Murgatroyd, Toru Fukushima, S. Kashiwa, Hiroshi OkamotoAbstract:1.3 mu m GaInAsP/InP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without Mode hopping in a single longitudinal Mode over a wide temperature range Delta T (5-45 degrees C). The temperature coefficient of the wavelength in this range was 0.8 AA deg-1, which was as small as that of the distributed feedback laser. At the extremes of this temperature range Mode hopping occurred. The wavelength did not shift into the nearest Neighbouring Mode but into one which was separated by several Mode spacings. An interference between the fundamental and higher-order transverse Modes might be the underlying mechanism.
N. Matsumoto - One of the best experts on this subject based on the ideXlab platform.
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Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD
Semiconductor Science and Technology, 1990Co-Authors: Akihiko Kasukawa, N. Matsumoto, I. J. Murgatroyd, Toru Fukushima, S. Kashiwa, Hiroshi OkamotoAbstract:1.3 mu m GaInAsP/InP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without Mode hopping in a single longitudinal Mode over a wide temperature range Delta T (5-45 degrees C). The temperature coefficient of the wavelength in this range was 0.8 AA deg-1, which was as small as that of the distributed feedback laser. At the extremes of this temperature range Mode hopping occurred. The wavelength did not shift into the nearest Neighbouring Mode but into one which was separated by several Mode spacings. An interference between the fundamental and higher-order transverse Modes might be the underlying mechanism.
I. J. Murgatroyd - One of the best experts on this subject based on the ideXlab platform.
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Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD
Semiconductor Science and Technology, 1990Co-Authors: Akihiko Kasukawa, N. Matsumoto, I. J. Murgatroyd, Toru Fukushima, S. Kashiwa, Hiroshi OkamotoAbstract:1.3 mu m GaInAsP/InP GRIN SCH MQW laser diodes grown by low-pressure MOCVD were operated without Mode hopping in a single longitudinal Mode over a wide temperature range Delta T (5-45 degrees C). The temperature coefficient of the wavelength in this range was 0.8 AA deg-1, which was as small as that of the distributed feedback laser. At the extremes of this temperature range Mode hopping occurred. The wavelength did not shift into the nearest Neighbouring Mode but into one which was separated by several Mode spacings. An interference between the fundamental and higher-order transverse Modes might be the underlying mechanism.
