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M. Palaniapan - One of the best experts on this subject based on the ideXlab platform.

  • A10 MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region
    Procedia Engineering, 2010
    Co-Authors: M. Palaniapan
    Abstract:

    Abstract In this paper, the operation of a high Q–10 MHz micromechanical oscillator is presented. A lame-mode bulk resonator operating in nonlinear region is integrated with low Noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase Noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. The oscillator shows −138 dBc/Hz Noise floor and −132 dBc/Hz 1 kHz away from the carrier, which meets the cellular phase Noise Requirement of −130 dBc/Hz at 1kHz offset for 13 MHz GSM reference oscillators.

  • A low phase Noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region
    2010 IEEE International Frequency Control Symposium, 2010
    Co-Authors: M. Palaniapan
    Abstract:

    In this paper, a 10MHz micromechanical reference oscillator is presented by combining lame-mode bulk resonator with Q above 200,000 and low Noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase Noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz Noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase Noise Requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.

Young-wan Kim - One of the best experts on this subject based on the ideXlab platform.

Jojin-ho - One of the best experts on this subject based on the ideXlab platform.

Jai-ik Choi - One of the best experts on this subject based on the ideXlab platform.

G Palmisano - One of the best experts on this subject based on the ideXlab platform.

  • a 12 ghz silicon bipolar dual conversion receiver for digital satellite applications
    IEEE Journal of Solid-state Circuits, 2005
    Co-Authors: T Copani, Santo Alessandro Smerzi, Giovanni Girlando, G Palmisano
    Abstract:

    A 12-GHz monolithic silicon bipolar receiver for digital video broadcasting via satellite (DVB-S) is presented. The receiver is based on a dual-conversion superheterodyne architecture that employs a single LO integrated in the same die. To comply with the stringent LO phase Noise Requirement of -101 dBc/Hz at 100 kHz offset from the carrier, an innovative VCO topology, based on a three-layer monolithic transformer, was used. The VCO exhibits a phase Noise of -102 dBc/Hz at 100 kHz offset from a 5.3-GHz carrier and a 1.1-GHz tuning range. At 12 GHz, the conversion gain is 33.6 dB, the single-sideband Noise figure is 5.9 dB and the output IP3 is +16 dBm. This work reports the first 12-GHz DVB-S monolithic receiver integrated in a low-cost silicon bipolar technology.