The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
Ingmar Kallfass - One of the best experts on this subject based on the ideXlab platform.
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Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020Co-Authors: Kanuj Sharma, Kevin Munoz Baron, Johannes Ruthardt, Jan Hueckelheim, Dominik Koch, Florian Muenzenmayer, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low Noise Susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.
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A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020Co-Authors: Kanuj Sharma, Deepak Dayanand, Kevin Munoz Baron, Johannes Ruthardt, Florian Munzenmayer, Jan Huckelheim, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low Noise Susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.
Kanuj Sharma - One of the best experts on this subject based on the ideXlab platform.
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Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020Co-Authors: Kanuj Sharma, Kevin Munoz Baron, Johannes Ruthardt, Jan Hueckelheim, Dominik Koch, Florian Muenzenmayer, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low Noise Susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.
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A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020Co-Authors: Kanuj Sharma, Deepak Dayanand, Kevin Munoz Baron, Johannes Ruthardt, Florian Munzenmayer, Jan Huckelheim, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low Noise Susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.
Isabel Varela-nieto - One of the best experts on this subject based on the ideXlab platform.
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C-Raf deficiency leads to hearing loss and increased Noise Susceptibility
Cellular and Molecular Life Sciences, 2015Co-Authors: Rocío Iriarte Rodríguez, Marta Magariños, Verena Pfeiffer, Ulf R. Rapp, Isabel Varela-nietoAbstract:The family of RAF kinases transduces extracellular information to the nucleus, and their activation is crucial for cellular regulation on many levels, ranging from embryonic development to carcinogenesis. B-RAF and C-RAF modulate neurogenesis and neuritogenesis during chicken inner ear development. C-RAF deficiency in humans is associated with deafness in the rare genetic insulin-like growth factor 1 (IGF-1), Noonan and Leopard syndromes. In this study, we show that RAF kinases are expressed in the developing inner ear and in adult mouse cochlea. A homozygous C - Raf deletion in mice caused profound deafness with no evident cellular aberrations except for a remarkable reduction of the K^+ channel Kir4.1 expression, a trait that suffices as a cause of deafness. To explore the role of C - Raf in cellular protection and repair, heterozygous C - Raf ^+ / − mice were exposed to Noise. A reduced C-RAF level negatively affected hearing preservation in response to Noise through mechanisms involving the activation of JNK and an exacerbated apoptotic response. Taken together, these results strongly support a role for C-RAF in hearing protection.
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C-Raf deficiency leads to hearing loss and increased Noise Susceptibility.
Cellular and molecular life sciences : CMLS, 2015Co-Authors: Rocío Rodríguez, Marta Magariños, Verena Pfeiffer, Ulf R. Rapp, Isabel Varela-nietoAbstract:The family of RAF kinases transduces extracellular information to the nucleus, and their activation is crucial for cellular regulation on many levels, ranging from embryonic development to carcinogenesis. B-RAF and C-RAF modulate neurogenesis and neuritogenesis during chicken inner ear development. C-RAF deficiency in humans is associated with deafness in the rare genetic insulin-like growth factor 1 (IGF-1), Noonan and Leopard syndromes. In this study, we show that RAF kinases are expressed in the developing inner ear and in adult mouse cochlea. A homozygous C-Raf deletion in mice caused profound deafness with no evident cellular aberrations except for a remarkable reduction of the K+ channel Kir4.1 expression, a trait that suffices as a cause of deafness. To explore the role of C-Raf in cellular protection and repair, heterozygous C-Raf+/− mice were exposed to Noise. A reduced C-RAF level negatively affected hearing preservation in response to Noise through mechanisms involving the activation of JNK and an exacerbated apoptotic response. Taken together, these results strongly support a role for C-RAF in hearing protection. Electronic supplementary material The online version of this article (doi:10.1007/s00018-015-1919-x) contains supplementary material, which is available to authorized users.
Johannes Ruthardt - One of the best experts on this subject based on the ideXlab platform.
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Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020Co-Authors: Kanuj Sharma, Kevin Munoz Baron, Johannes Ruthardt, Jan Hueckelheim, Dominik Koch, Florian Muenzenmayer, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low Noise Susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.
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A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020Co-Authors: Kanuj Sharma, Deepak Dayanand, Kevin Munoz Baron, Johannes Ruthardt, Florian Munzenmayer, Jan Huckelheim, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low Noise Susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.
Kevin Munoz Baron - One of the best experts on this subject based on the ideXlab platform.
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Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020Co-Authors: Kanuj Sharma, Kevin Munoz Baron, Johannes Ruthardt, Jan Hueckelheim, Dominik Koch, Florian Muenzenmayer, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low Noise Susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.
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A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020Co-Authors: Kanuj Sharma, Deepak Dayanand, Kevin Munoz Baron, Johannes Ruthardt, Florian Munzenmayer, Jan Huckelheim, Ingmar KallfassAbstract:This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low Noise Susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.