The Experts below are selected from a list of 18 Experts worldwide ranked by ideXlab platform
Xiaobo Tian - One of the best experts on this subject based on the ideXlab platform.
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Study of the Noninverting Amplifier Based on Memristor with Linear DOpant Drift
2012 Second International Conference on Intelligent System Design and Engineering Application, 2012Co-Authors: Qingjiang Li, Hui Xu, Haijun Liu, Xiaobo TianAbstract:According to the HP memristor model with linear do pant drift, the electrical characteristics of memristor are analyzed. Then, the transmission characteristics of memristor based Noninverting Op amplifier are investigated. The theoretical results are well demonstrated by the SPICE circuit simulation with a published memristor sub circuit with linear do pant drift.
Yuming Mao - One of the best experts on this subject based on the ideXlab platform.
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Transmission characteristics study of memristors based Op-Amp circuits
2009 International Conference on Communications Circuits and Systems, 2009Co-Authors: Zhiguang Qin, Yuming MaoAbstract:According to a physical memristor fabricated by nano technology, a monotone-increasing and piecewise-linear nonlinear memristor model is applied to study the transmission characteristics of memristors based inverting and Noninverting Op-amp circuits. Simulation results demonstrated that inverting amplification and Noninverting amplification can be obtained in the memristor based Op-amp circuits.
James J Whalen - One of the best experts on this subject based on the ideXlab platform.
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Parasitic capacitances can cause demodulation RFI to differ in inverting and Noninverting Operational amplifier circuits
IEEE 1991 International Symposium on Electromagnetic Compatibility, 1991Co-Authors: H. Ghadamabadi, James J WhalenAbstract:The demodulation RFI responses of an inverting Operational amplifier (Op amp) circuit and a Noninverting Op amp circuit are compared. The intended voltage gain of the inverting Op amp circuit is A/sub 1/=-R2/R1=-10. The intended linear voltage gain of the Noninverting Op amp circuit is A/sub N1/=(R1+R2)/R1=11. For both circuits, the resistor values are R1=10 k Omega and R2=100 k Omega . Analysis shows that parasitic capacitances C/sub in/ (between the inverting and Noninverting inputs of the Op amp) and CR1 (shunted across R1) cause the inverting Op amp circuit to have better RFI immunity than the Noninverting Op amp circuit. The derivation is based on the hypothesis that the demodulation RFI response is caused by a second-order nonlinearity so that a 3-dB reduction in the linear voltage gain causes the second-order demodulation RFI response characterized by the transfer function H/sub 2/ to be reduced by 6 dB. For the assumed values of C/sub in/=8 pF and CR1=0.4 pF. the measured and calculated values of the difference between H/sub 2/ values for the inverting and Noninverting circuits were in good agreement.
Qingjiang Li - One of the best experts on this subject based on the ideXlab platform.
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Study of the Noninverting Amplifier Based on Memristor with Linear DOpant Drift
2012 Second International Conference on Intelligent System Design and Engineering Application, 2012Co-Authors: Qingjiang Li, Hui Xu, Haijun Liu, Xiaobo TianAbstract:According to the HP memristor model with linear do pant drift, the electrical characteristics of memristor are analyzed. Then, the transmission characteristics of memristor based Noninverting Op amplifier are investigated. The theoretical results are well demonstrated by the SPICE circuit simulation with a published memristor sub circuit with linear do pant drift.
Zhiguang Qin - One of the best experts on this subject based on the ideXlab platform.
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Transmission characteristics study of memristors based Op-Amp circuits
2009 International Conference on Communications Circuits and Systems, 2009Co-Authors: Zhiguang Qin, Yuming MaoAbstract:According to a physical memristor fabricated by nano technology, a monotone-increasing and piecewise-linear nonlinear memristor model is applied to study the transmission characteristics of memristors based inverting and Noninverting Op-amp circuits. Simulation results demonstrated that inverting amplification and Noninverting amplification can be obtained in the memristor based Op-amp circuits.
