The Experts below are selected from a list of 1143 Experts worldwide ranked by ideXlab platform
Gerry Mei - One of the best experts on this subject based on the ideXlab platform.
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125 - 211 GHz low noise MMIC amplifier design for radio astronomy
Experimental Astronomy, 2019Co-Authors: Daniel White, Richard Lai, William Mcgenn, Danielle George, Gary A. Fuller, Kieran Cleary, Anthony Readhead, Gerry MeiAbstract:To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.
Daniel White - One of the best experts on this subject based on the ideXlab platform.
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125 - 211 GHz low noise MMIC amplifier design for radio astronomy
Experimental Astronomy, 2019Co-Authors: Daniel White, Richard Lai, William Mcgenn, Danielle George, Gary A. Fuller, Kieran Cleary, Anthony Readhead, Gerry MeiAbstract:To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.
Richard Lai - One of the best experts on this subject based on the ideXlab platform.
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125 - 211 GHz low noise MMIC amplifier design for radio astronomy
Experimental Astronomy, 2019Co-Authors: Daniel White, Richard Lai, William Mcgenn, Danielle George, Gary A. Fuller, Kieran Cleary, Anthony Readhead, Gerry MeiAbstract:To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.
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On-wafer measurements of S-MMIC amplifiers from 400–500 GHz
2016Co-Authors: Lorene Samoska, Pekka Kangaslahti, Senior Member, Andy Fung, David Pukala, Richard Lai, Stephen Sarkozy, X. B. Mei, Greg BollAbstract:Abstract — In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400-500 GHz range. A single-stage amplifier and two three-stage amplifiers with similar topology are presented, and have been fabricated in Northrop Grumman Corporation’s (NGC) 35-nm InP high electron mobility transistor (HEMT) process. The circuits were fabricated using different indium channel compositions on different wafers, and comparison of the results based on the indium content will be presented. We have performed on-wafer S-parameter calibration and measurements using newly developed WR2.2 waveguide wafer probes from 325-508 GHz. We measured approximately 5 dB of gain for the single stage amplifier at 437 GHz, and approximately 10 dB of gain at 474 GHz for a three-stage amplifier, with over 9 dB of gain at 490 GHz. Index Terms — Submillimeter-wave monolithic integrated circuit, coplanar waveguide with ground, low noise amplifier, MMIC, coplanar waveguide, HEMT. I
William Mcgenn - One of the best experts on this subject based on the ideXlab platform.
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125 - 211 GHz low noise MMIC amplifier design for radio astronomy
Experimental Astronomy, 2019Co-Authors: Daniel White, Richard Lai, William Mcgenn, Danielle George, Gary A. Fuller, Kieran Cleary, Anthony Readhead, Gerry MeiAbstract:To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.
Danielle George - One of the best experts on this subject based on the ideXlab platform.
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125 - 211 GHz low noise MMIC amplifier design for radio astronomy
Experimental Astronomy, 2019Co-Authors: Daniel White, Richard Lai, William Mcgenn, Danielle George, Gary A. Fuller, Kieran Cleary, Anthony Readhead, Gerry MeiAbstract:To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers.