The Experts below are selected from a list of 53109 Experts worldwide ranked by ideXlab platform
Yuri S. Kivshar - One of the best experts on this subject based on the ideXlab platform.
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ultrafast all Optical Switching with magnetic resonances in nonlinear dielectric nanostructures
Nano Letters, 2015Co-Authors: Maxim R Shcherbakov, Andrey E Miroshnichenko, Polina P Vabishchevich, Alexander S Shorokhov, Katie E Chong, Dukyong Choi, Isabelle Staude, Dragomir N Neshev, A A Fedyanin, Yuri S. KivsharAbstract:We demonstrate experimentally ultrafast all-Optical Switching in subwavelength nonlinear dielectric nanostructures exhibiting localized magnetic Mie resonances. We employ amorphous silicon nanodisks to achieve strong self-modulation of femtosecond pulses with a depth of 60% at picojoule-per-disk pump energies. In the pump–probe measurements, we reveal that Switching in the nanodisks can be governed by pulse-limited 65 fs-long two-photon absorption being enhanced by a factor of 80 with respect to the unstructured silicon film. We also show that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-Optical switch operating at the nanoscale.
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all Optical Switching and multistability in photonic structures with liquid crystal defects
Applied Physics Letters, 2008Co-Authors: Andrey E Miroshnichenko, Etienne Brasselet, Yuri S. KivsharAbstract:We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-Optical Switching devices based on Optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the Optical Freedericksz transition in the spectral domain, and this leads to all-Optical Switching and light-induced multistability. This effect has no quasistatics electric field analog, and it results from nonlinear coupling between light and a defect mode. © 2008 American Institute of Physics. DOI: 10.1063/1.2949076
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all Optical Switching and multistability in photonic structures with liquid crystal defects
arXiv: Soft Condensed Matter, 2007Co-Authors: Andrey E Miroshnichenko, Etienne Brasselet, Yuri S. KivsharAbstract:We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-Optical Switching devices based on Optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the Optical Fr\'eedericksz transition in the spectral domain, and this leads to all-Optical Switching and light-induced multistability. This effect has no quasi-statics electric field analogue, and it results from nonlinear coupling between light and a defect mode.
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tunable all Optical Switching in periodic structures with liquid crystal defects
arXiv: Optics, 2006Co-Authors: Andrey E Miroshnichenko, Igor Pinkevych, Yuri S. KivsharAbstract:We suggest that tunable orientational nonlinearity of nematic liquid crystals can be employed for all-Optical Switching in periodic photonic structures with liquid-crystal defects. We consider a one-dimensional periodic structure of Si layers with a local defect created by infiltrating a liquid crystal into a pore, and demonstrate, by solving numerically a system of coupled nonlinear equations for the nematic director and the propagating electric field, that the light-induced Freedericksz transition can lead to a sharp Switching and diode operation in the photonic devices.
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nonlinear phase shift and all Optical Switching in quasi phase matched quadratic media
Optics Letters, 1998Co-Authors: Andrey Kobyakov, F Lederer, Ole Bang, Yuri S. KivsharAbstract:Recently it was shown that in quasi-phase-matched quadratic media the average intensities are subject to an induced Kerr effect. We analytically study the influence of this induced cubic nonlinearity on the amplitude and phase modulation of the fundamental wave and predict efficient all-Optical Switching.
R D Averitt - One of the best experts on this subject based on the ideXlab platform.
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ultrafast Optical Switching of terahertz metamaterials fabricated on eras gaas nanoisland superlattices
Optics Letters, 2007Co-Authors: Houtong Chen, Willie J Padilla, Joshua M O Zide, Seth R Bank, A C Gossard, Antoinette J Taylor, R D AverittAbstract:We demonstrate Optical Switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A Switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.
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ultrafast Optical Switching of terahertz metamaterials fabricated on eras gaas nanoisland superlattices
Optics Letters, 2007Co-Authors: Houtong Chen, Willie J Padilla, Joshua M O Zide, Seth R Bank, A C Gossard, Antoinette J Taylor, R D AverittAbstract:We demonstrate Optical Switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A Switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.
Masaya Notomi - One of the best experts on this subject based on the ideXlab platform.
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ultrafast and energy efficient all Optical Switching with graphene loaded deep subwavelength plasmonic waveguides
Nature Photonics, 2020Co-Authors: Masaaki Ono, Masanori Hata, Masato Tsunekawa, Kengo Nozaki, Hisashi Sumikura, Hisashi Chiba, Masaya NotomiAbstract:All-Optical switches have attracted attention because they can potentially overcome the speed limitation of electric switches. However, ultrafast, energy-efficient all-Optical switches have been challenging to realize owing to the intrinsically small Optical nonlinearity in existing materials. As a solution, we propose the use of graphene-loaded deep-subwavelength plasmonic waveguides (30 × 20 nm2). Thanks to extreme light confinement, we have greatly enhanced Optical nonlinear absorption in graphene, and achieved ultrafast all-Optical Switching with a Switching energy of 35 fJ and a Switching time of 260 fs. The Switching energy is four orders of magnitude smaller than that in previous graphene-based devices and is the smallest value reported for any all-Optical switch operating at a few picoseconds or less. This device can be efficiently connected to conventional silicon waveguides and used in silicon photonic integrated circuits. We believe that this graphene-based device will pave the way towards on-chip ultrafast and energy-efficient photonic processing. All-Optical Switching with a Switching energy of 35 fJ and a Switching time of 260 fs is reported in a nanoscale integrated Optical circuit.
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sub femtojoule all Optical Switching using a photonic crystal nanocavity
Nature Photonics, 2010Co-Authors: Kengo Nozaki, Takasumi Tanabe, Akihiko Shinya, Shinji Matsuo, Tomonari Sato, Hideaki Taniyama, Masaya NotomiAbstract:Although high-speed all-Optical switches are expected to replace their electrical counterparts in information processing, their relatively large size and power consumption have remained obstacles. We use a combination of an ultrasmall photonic-crystal nanocavity and strong carrier-induced nonlinearity in InGaAsP to successfully demonstrate low-energy Switching within a few tens of picoseconds. Switching energies with a contrast of 3 and 10 dB of 0.42 and 0.66 fJ, respectively, have been obtained, which are over two orders of magnitude lower than those of previously reported all-Optical switches. The ultrasmall cavity substantially enhances the nonlinearity as well as the recovery speed, and the Switching efficiency is maximized by a combination of two-photon absorption and linear absorption in the InGaAsP nanocavities. These switches, with their chip-scale integratability, may lead to the possibility of low-power, high-density, all-Optical processing in a chip. All-Optical Switching energies as small as 0.42 fJ — two orders of magnitude lower than previously reported — are demonstrated in small photonic crystal cavities incorporating InGaAsP. These devices can switch within a few tens of picoseconds, and may therefore have potential for low-power high-density all-Optical processing on a chip.
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fast all Optical Switching using ion implanted silicon photonic crystal nanocavities
Applied Physics Letters, 2007Co-Authors: Takasumi Tanabe, Akihiko Shinya, Tai Tsuchizawa, Eiichi Kuramochi, Masaya Notomi, Katsuhiko Nishiguchi, Hiroshi Inokawa, Koji Yamada, Toshifumi WatanabeAbstract:On-chip all-Optical Switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast Switching recovery time for PhC switches. The Switching window (∼70ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100fJ).
Houtong Chen - One of the best experts on this subject based on the ideXlab platform.
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ultrafast Optical Switching of terahertz metamaterials fabricated on eras gaas nanoisland superlattices
Optics Letters, 2007Co-Authors: Houtong Chen, Willie J Padilla, Joshua M O Zide, Seth R Bank, A C Gossard, Antoinette J Taylor, R D AverittAbstract:We demonstrate Optical Switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A Switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.
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ultrafast Optical Switching of terahertz metamaterials fabricated on eras gaas nanoisland superlattices
Optics Letters, 2007Co-Authors: Houtong Chen, Willie J Padilla, Joshua M O Zide, Seth R Bank, A C Gossard, Antoinette J Taylor, R D AverittAbstract:We demonstrate Optical Switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A Switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.
Andrey E Miroshnichenko - One of the best experts on this subject based on the ideXlab platform.
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ultrafast all Optical Switching with magnetic resonances in nonlinear dielectric nanostructures
Nano Letters, 2015Co-Authors: Maxim R Shcherbakov, Andrey E Miroshnichenko, Polina P Vabishchevich, Alexander S Shorokhov, Katie E Chong, Dukyong Choi, Isabelle Staude, Dragomir N Neshev, A A Fedyanin, Yuri S. KivsharAbstract:We demonstrate experimentally ultrafast all-Optical Switching in subwavelength nonlinear dielectric nanostructures exhibiting localized magnetic Mie resonances. We employ amorphous silicon nanodisks to achieve strong self-modulation of femtosecond pulses with a depth of 60% at picojoule-per-disk pump energies. In the pump–probe measurements, we reveal that Switching in the nanodisks can be governed by pulse-limited 65 fs-long two-photon absorption being enhanced by a factor of 80 with respect to the unstructured silicon film. We also show that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-Optical switch operating at the nanoscale.
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all Optical Switching and multistability in photonic structures with liquid crystal defects
Applied Physics Letters, 2008Co-Authors: Andrey E Miroshnichenko, Etienne Brasselet, Yuri S. KivsharAbstract:We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-Optical Switching devices based on Optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the Optical Freedericksz transition in the spectral domain, and this leads to all-Optical Switching and light-induced multistability. This effect has no quasistatics electric field analog, and it results from nonlinear coupling between light and a defect mode. © 2008 American Institute of Physics. DOI: 10.1063/1.2949076
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all Optical Switching and multistability in photonic structures with liquid crystal defects
arXiv: Soft Condensed Matter, 2007Co-Authors: Andrey E Miroshnichenko, Etienne Brasselet, Yuri S. KivsharAbstract:We demonstrate that one-dimensional photonic crystals with pure nematic liquid-crystal defects can operate as all-Optical Switching devices based on Optical orientational nonlinearities of liquid crystals. We show that such a periodic structure is responsible for a modulated threshold of the Optical Fr\'eedericksz transition in the spectral domain, and this leads to all-Optical Switching and light-induced multistability. This effect has no quasi-statics electric field analogue, and it results from nonlinear coupling between light and a defect mode.
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tunable all Optical Switching in periodic structures with liquid crystal defects
arXiv: Optics, 2006Co-Authors: Andrey E Miroshnichenko, Igor Pinkevych, Yuri S. KivsharAbstract:We suggest that tunable orientational nonlinearity of nematic liquid crystals can be employed for all-Optical Switching in periodic photonic structures with liquid-crystal defects. We consider a one-dimensional periodic structure of Si layers with a local defect created by infiltrating a liquid crystal into a pore, and demonstrate, by solving numerically a system of coupled nonlinear equations for the nematic director and the propagating electric field, that the light-induced Freedericksz transition can lead to a sharp Switching and diode operation in the photonic devices.
