The Experts below are selected from a list of 78 Experts worldwide ranked by ideXlab platform
Phillip N First - One of the best experts on this subject based on the ideXlab platform.
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
Journal of Physical Chemistry B, 2004Co-Authors: Claire Berger, Zhimin Song, Tianbo Li, Xuebin Li, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N FirstAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance Samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly Ordered Sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
arXiv: Materials Science, 2004Co-Authors: Claire Berger, Zhimin Song, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N First, Walt A De HeerAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance Samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-Ordered Sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
Claire Berger - One of the best experts on this subject based on the ideXlab platform.
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
Journal of Physical Chemistry B, 2004Co-Authors: Claire Berger, Zhimin Song, Tianbo Li, Xuebin Li, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N FirstAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance Samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly Ordered Sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
arXiv: Materials Science, 2004Co-Authors: Claire Berger, Zhimin Song, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N First, Walt A De HeerAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance Samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-Ordered Sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
R Feng - One of the best experts on this subject based on the ideXlab platform.
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
Journal of Physical Chemistry B, 2004Co-Authors: Claire Berger, Zhimin Song, Tianbo Li, Xuebin Li, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N FirstAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance Samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly Ordered Sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
arXiv: Materials Science, 2004Co-Authors: Claire Berger, Zhimin Song, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N First, Walt A De HeerAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance Samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-Ordered Sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
Asmerom Ogbazghi - One of the best experts on this subject based on the ideXlab platform.
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
Journal of Physical Chemistry B, 2004Co-Authors: Claire Berger, Zhimin Song, Tianbo Li, Xuebin Li, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N FirstAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance Samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly Ordered Sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
arXiv: Materials Science, 2004Co-Authors: Claire Berger, Zhimin Song, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N First, Walt A De HeerAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance Samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-Ordered Sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
Zhenting Dai - One of the best experts on this subject based on the ideXlab platform.
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
Journal of Physical Chemistry B, 2004Co-Authors: Claire Berger, Zhimin Song, Tianbo Li, Xuebin Li, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N FirstAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance Samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly Ordered Sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...
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ultrathin epitaxial graphite 2d electron gas properties and a route toward graphene based nanoelectronics
arXiv: Materials Science, 2004Co-Authors: Claire Berger, Zhimin Song, Asmerom Ogbazghi, R Feng, Zhenting Dai, A Marchenkov, E H Conrad, Phillip N First, Walt A De HeerAbstract:We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance Samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-Ordered Sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.