The Experts below are selected from a list of 1185 Experts worldwide ranked by ideXlab platform
Yi-jen Chiu - One of the best experts on this subject based on the ideXlab platform.
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High-Power Long-Waveguide 1300nm Directly Modulated DFB Laser for 45Gb/s NRZ and 50Gb/s PAM4
2019 IEEE Photonics Conference (IPC), 2019Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, C.y. Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5- $\mu \text{m}$ -thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250- $\mu \text{m}$ -long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and −3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
Rih-you Chen - One of the best experts on this subject based on the ideXlab platform.
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High-Power Long-Waveguide 1300nm Directly Modulated DFB Laser for 45Gb/s NRZ and 50Gb/s PAM4
2019 IEEE Photonics Conference (IPC), 2019Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, C.y. Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5- $\mu \text{m}$ -thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250- $\mu \text{m}$ -long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and −3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
Yang-jeng Chen - One of the best experts on this subject based on the ideXlab platform.
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High-Power Long-Waveguide 1300nm Directly Modulated DFB Laser for 45Gb/s NRZ and 50Gb/s PAM4
2019 IEEE Photonics Conference (IPC), 2019Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, C.y. Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5- $\mu \text{m}$ -thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250- $\mu \text{m}$ -long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and −3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
Cong-long Chen - One of the best experts on this subject based on the ideXlab platform.
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High-Power Long-Waveguide 1300nm Directly Modulated DFB Laser for 45Gb/s NRZ and 50Gb/s PAM4
2019 IEEE Photonics Conference (IPC), 2019Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
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High-Power Long-Waveguide 1300-nm Directly Modulated DFB Laser for 45-Gb/s NRZ and 50-Gb/s PAM4
IEEE Photonics Technology Letters, 2018Co-Authors: Rih-you Chen, Yang-jeng Chen, Cong-long Chen, Yi-jen ChiuAbstract:A 1300-nm high-speed high-Power directly modulated distributed-feedback laser using floating feeding electrode has been demonstrated. A 5-μm-thick benzocyclobutene was used for planarization to float a coplanar waveguide, connecting a reversed-mesa ridge waveguide of a laser. Low parasitic capacitance was then formed. A long waveguide can thus be fabricated with low roll-off at high-frequency modulation, further enabling high-Output Optical Power. A 250-μm-long waveguide was fabricated, leading to >28-mW Optical Power with linear operation and -3-dB bandwidth of 26 GHz. Furthermore, improvement in high-frequency regime and the reduction near resonance peak were found, attaining a broadband and flat frequency response at high current. A 45-Gb/s non-return-to-zero and 50-Gb/s four-level pulse amplitude modulation with 35-km fiber transmission were successfully shown through modulating high-Output Optical Power.
Nikita A. Pikhtin - One of the best experts on this subject based on the ideXlab platform.
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Effect of waveguide design on AlGalnAs/InP laser diode characteristics
2016 International Conference Laser Optics (LO), 2016Co-Authors: D. A. Veselov, A. V. Lyutetskiy, Nikita A. Pikhtin, Sergey O. Slipchenko, I. S. Shashkin, A. A. Marmalyuk, K. R. Ayusheva, A. A. Padalitsa, M. A. Ladugin, Yu. L. RyaboshtanAbstract:1550nm-lasers based on MOCVD-grown heterostructures are investigated. It is determined, that additional barrier layers grown between waveguide and cladding layers block carrier leakage into the cladding layers but results in internal Optical loss rise with drive current increase. It is demonstrated that incorporation of barrier layers allows attaining 92% internal quantum efficiency and 3.2W CW RT Output Optical Power.
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Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ = 1470 nm)
Quantum Electronics, 2015Co-Authors: D. A. Veselov, A. V. Lyutetskiy, Nikita A. Pikhtin, Sergey O. Slipchenko, I. S. Shashkin, L. S. Vavilova, K. R. Ayusheva, K. V. Bakhvalov, V. V. Vasil’eva, Z.n. SokolovaAbstract:We have studied the effect of laser cavity parameters on the light–current characteristics of lasers based on the AlGaInAs/GaInAsP/InP solid solution system that emit in the spectral range 1400 – 1600 nm. It has been shown that optimisation of cavity parameters (chip length and front facet reflectivity) allows one to improve heat removal from the laser, without changing other laser characteristics. An increase in the maximum Output Optical Power of the laser by 0.5 W has been demonstrated due to cavity design optimisation.
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New type of high Power pulse semiconductor laser based on epitaxially-integrated AlGaAs/GaAs thyristor heterostructure
2014 IEEE Photonics Conference, 2014Co-Authors: Sergey O. Slipchenko, Nikita A. Pikhtin, I. S. Tarasov, A. A. Podoskin, A. V. Rozhkov, V. V. Vasileva, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. KurniavkoAbstract:We present the latest theoretical and experimental results on nonlinear dynamic characteristics of laser-thyristor. We have experimentally demonstrated 4MHz/4.5W high frequency lasing of laser-thyristor in 890-910 nm spectral range. The minimum values of the energy and amplitude of the control current density pulse required to turn on 28 W peak Output Optical Power of laser-thyristor were 1.4 nJ and 0.6 A/cm2, respectively.
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Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
Technical Physics Letters, 2013Co-Authors: Sergey O. Slipchenko, Nikita A. Pikhtin, A. A. Podoskin, A. V. Rozhkov, A. Yu. Leshko, I. S. TarasovAbstract:Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal Optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total Output Optical Power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p - n junction.
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Pulsed semiconductor lasers with higher Optical strength of cavity Output mirrors
Semiconductors, 2010Co-Authors: A. N. Petrunov, A. V. Lyutetskiy, Nikita A. Pikhtin, Sergey O. Slipchenko, A. A. Podoskin, I. S. Shashkin, T. A. Nalet, N. V. Fetisova, L. S. Vavilova, P. A. AlekseevAbstract:Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal Optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm^-1 and 97%, respectively. It is shown that the highest Output Optical Power of laser diodes with antireflecting (SiO_2) and reflecting (Si/SiO_2) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si_3N_4 layers allowed an increase in the maximum Output Optical Power to 120 W. Mirror damage was not observed at the attained Output Optical Power.
