The Experts below are selected from a list of 67023 Experts worldwide ranked by ideXlab platform
Jaramillo Rafael - One of the best experts on this subject based on the ideXlab platform.
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Formation of large-area MoS2 thin films by Oxygen-catalyzed sulfurization of Mo thin films
'American Vacuum Society', 2019Co-Authors: Jo, Seong Soon, Li Yifei, Singh, Akshay K, Kumar Abinash, Frisone Sam, Lebeau, James M, Jaramillo RafaelAbstract:While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide new insights into the growth of MoS2 by sulfurization and suggest that introducing an appropriate catalyst during chalcogenide phase formation could enable new processes for making homogeneous, large-area MoS2 films at low processing temperature on a variety of substrates.Office of Naval Research MURI (Grant N00014-17-1-2661)National Science Foundation (Grant DMR-1350273
R Jaramillo - One of the best experts on this subject based on the ideXlab platform.
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formation of large area mos2 thin films by Oxygen catalyzed sulfurization of mo thin films
Journal of Vacuum Science and Technology, 2020Co-Authors: Akshay Singh, Abinash Kumar, Sam Frisone, James M Lebeau, R JaramilloAbstract:While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide new insights into the growth of MoS2 by sulfurization and suggest that introducing an appropriate catalyst during chalcogenide phase formation could enable new processes for making homogeneous, large-area MoS2 films at low processing temperature on a variety of substrates.While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide ne...
Junqing Pan - One of the best experts on this subject based on the ideXlab platform.
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totally atom economical synthesis of nano micro structured nickel hydroxide realized by an ni O2 fuel cell
Green Chemistry, 2015Co-Authors: Junqing Pan, Meng Yang, Yanzhi Sun, Xihong Yue, Xueliang SunAbstract:The conventional syntheses of nickel hydroxide (Ni(OH)2) produce a large amount of chemical waste because of low atom-economy reactions employed in the processes. Here, we describe a totally atom-economical synthesis of Ni(OH)2 from nickel metal, water, and Oxygen Gas (O2) through a newly designed, membrane-free nickel–Oxygen (Ni–O2) fuel cell. Electricity is also generated as the by-product. The new synthesis method can greatly reduce the pollution to the environment. The as-prepared Ni(OH)2 has a desired nano/micro structure and exhibits excellent performance as the positive electrode material of nickel–metal hydride batteries.
Jo, Seong Soon - One of the best experts on this subject based on the ideXlab platform.
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Formation of large-area MoS2 thin films by Oxygen-catalyzed sulfurization of Mo thin films
'American Vacuum Society', 2019Co-Authors: Jo, Seong Soon, Li Yifei, Singh, Akshay K, Kumar Abinash, Frisone Sam, Lebeau, James M, Jaramillo RafaelAbstract:While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide new insights into the growth of MoS2 by sulfurization and suggest that introducing an appropriate catalyst during chalcogenide phase formation could enable new processes for making homogeneous, large-area MoS2 films at low processing temperature on a variety of substrates.Office of Naval Research MURI (Grant N00014-17-1-2661)National Science Foundation (Grant DMR-1350273
Akshay Singh - One of the best experts on this subject based on the ideXlab platform.
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formation of large area mos2 thin films by Oxygen catalyzed sulfurization of mo thin films
Journal of Vacuum Science and Technology, 2020Co-Authors: Akshay Singh, Abinash Kumar, Sam Frisone, James M Lebeau, R JaramilloAbstract:While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide new insights into the growth of MoS2 by sulfurization and suggest that introducing an appropriate catalyst during chalcogenide phase formation could enable new processes for making homogeneous, large-area MoS2 films at low processing temperature on a variety of substrates.While transition metal dichalcogenide (TMD) thin films are most commonly synthesized by vapor transport using solid metal oxide precursors, directly converting metal thin films to TMDs may be more scalable and controllable, e.g., to enable large-area coating by vacuum deposition. The thermodynamics are favorable for MoS2 formation from Mo in sulfur-rich environments, but sulfurization tends to be slow and the product is highly dependent on the chemical pathway taken. Here, the authors report on the role of trace Oxygen Gas (O2) for the sulfurization of Mo films. They study the formation of MoS2 from Mo films in H2S vapor, between 350 and 500 °C and with varying levels of O2. They find that the presence of trace levels of O2 accelerates the crystallization of MoS2 and affects the layer orientation, without changing the kinetics of mass transport or the final film composition. O2 acts as a catalyst to promote the crystallization of MoS2 at lower temperatures than otherwise possible. These results provide ne...
