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Roger Grousson - One of the best experts on this subject based on the ideXlab platform.

  • A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires
    Superlattices and Microstructures, 2001
    Co-Authors: Maria Tsetseri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

  • A study for the cartography of the interface roughness of V-shape AlGaAs/GaAs quantum wires,
    Superlattices and Microstructures, 2001
    Co-Authors: M. Tsetsteri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

M. Tsetsteri - One of the best experts on this subject based on the ideXlab platform.

  • A study for the cartography of the interface roughness of V-shape AlGaAs/GaAs quantum wires,
    Superlattices and Microstructures, 2001
    Co-Authors: M. Tsetsteri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

Valia Voliotis - One of the best experts on this subject based on the ideXlab platform.

  • A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires
    Superlattices and Microstructures, 2001
    Co-Authors: Maria Tsetseri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

  • A study for the cartography of the interface roughness of V-shape AlGaAs/GaAs quantum wires,
    Superlattices and Microstructures, 2001
    Co-Authors: M. Tsetsteri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

Georgios P. Triberis - One of the best experts on this subject based on the ideXlab platform.

  • A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires
    Superlattices and Microstructures, 2001
    Co-Authors: Maria Tsetseri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

  • A study for the cartography of the interface roughness of V-shape AlGaAs/GaAs quantum wires,
    Superlattices and Microstructures, 2001
    Co-Authors: M. Tsetsteri, Georgios P. Triberis, Valia Voliotis, Roger Grousson
    Abstract:

    We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the Photoluminescence and micro-Photoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-Photoluminescence Spectrum is attributed to localized excitonic states in island-like fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall Photoluminescence Spectrum. The model is applied to a V-shaped Al0.3Ga0.7As/GaAs quantum wire and reproduces successfully the observed Photoluminescence and micro-Photoluminescence characteristics.

Zhigang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Theoretical analyses and experimental studies on semiconductor disk lasers
    Optical and Quantum Electronics, 2009
    Co-Authors: Yanrong Song, Peng Zhang, Xinping Zhang, Zhigang Zhang
    Abstract:

    The comprehensive theoretical analyses and experimental studies on semiconductor disk lasers are presented. The edge-emitting Photoluminescence Spectrum which reflects the essential emission properties of quantum wells is theoretically modeled, and the result is in good agreement with the experiment. The surface-emitting Photoluminescence Spectrum which carries the characteristics of the semiconductor microcavity is explained using the numerically simulated longitudinal confinement factor. The output characteristic is modeled by taking into account the thermal effect, and the result is consistent with the experiment. The oscillating mode of the laser is codetermined by the reflectivity of DBR, the edge-emitting, and the surface-emitting PL Spectrum.

  • Simulation of the surface-emitting Photoluminescence Spectrum in a semiconductor disk laser
    Journal of Optics A: Pure and Applied Optics, 2009
    Co-Authors: Peng Zhang, Yanrong Song, Xinping Zhang, Zhigang Zhang
    Abstract:

    The surface-emitting Photoluminescence Spectrum is an important factor which directly participates in the determination of the oscillating wavelength and the output power of a semiconductor disk laser. Here a theoretical model for calculating the surface-emitting Photoluminescence Spectrum is presented. The surface-emitting Photoluminescence spectra of two samples, one with a resonant microcavity and the other with an antiresonant microcavity, are calculated; the simulated results are in good agreement with the experimental results.