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Dong-soo Park - One of the best experts on this subject based on the ideXlab platform.
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Self-Growth of Centimeter-Scale Single Crystals by Normal Sintering Process in Modified Potassium Sodium Niobate Ceramics
Scientific Reports, 2015Co-Authors: Cheol-woo Ahn, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Jong-woo Kim, Joon-hwan Choi, Shujun Zhang, Ho-yong Lee, Si-young Choi, Dong-soo ParkAbstract:In this manuscript, an interesting phenomenon is reported. That is the self-growth of single crystals in Pb-free Piezoelectric ceramics. These crystals are several centimeters in size. They are grown without any seed addition through a normal sintering process in modified potassium sodium niobate ceramics. It has been achieved by the composition designed to compensate the Na^+ loss which occurs during the liquid phase sintering. The composition of the crystals is (K_0.4925Na_0.4925−xBa_0.015+x/2)Nb_0.995+xO_3 [x is determined by the Na^+ loss, due to Na_2O volatilization]. These crystals have high Piezoelectric Voltage coefficients (g_33, 131 10 ^ −3 Vm/N ), indicating that they are good candidates for Piezoelectric sensors and energy harvesting devices. We hope that this report can offer the opportunity for many researchers to have an interest in these crystals.
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Composition Design Rule for High Piezoelectric Voltage Coefficient in (K$_{0.5}$Na$_{0.5}$)NbO$_{3}$ Based Pb-Free Ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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composition design rule for high Piezoelectric Voltage coefficient in k _ 0 5 na _ 0 5 nbo _ 3 based pb free ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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Magnetoelectric composite thick films of PZT–PMnN + NiZnFe2O4 by aerosol-deposition
Ceramics International, 2012Co-Authors: Jungho Ryu, Shashank Priya, Guifang Han, Woon-ha Yoon, Byung-dong Hahn, Jong-woo Kim, Dong-soo Park, Chang Woo Baek, Chee Sung Park, Dae Yong JeongAbstract:Abstract Highly dense magnetoelectric composite films with 10 μm-thick of high Piezoelectric Voltage coefficient material, 0.9Pb(Zr 57 Ti 43 )O 3 –0.1Pb(Mn 1/3 Nb 2/3 )O 3 (PZT–PMnN) and magnetostrictive material, Ni 0.8 Zn 0.2 Fe 2 O 4 (NZF), were fabricated on a platinized Si substrate using aerosol deposition (AD). With increasing magnetic NZF content, dielectric and ferroelectric properties were gradually decreased while magnetizations were improved. The 20% NZF added composite thick film were found to exhibit the maximum ME coefficient. This optimal NZF content is the same as that of bulk ME composite materials. It is noticeable that AD can control the content ratio of ME composite films by controlling the powder composition. The fabricated ME composite films have high ME Voltage coefficient coupling because of high density without severe inter-reactions of two phases.
Jungho Ryu - One of the best experts on this subject based on the ideXlab platform.
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composition design rule for high Piezoelectric Voltage coefficient in k _ 0 5 na _ 0 5 nbo _ 3 based pb free ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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Composition Design Rule for High Piezoelectric Voltage Coefficient in (K$_{0.5}$Na$_{0.5}$)NbO$_{3}$ Based Pb-Free Ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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Magnetoelectric composite thick films of PZT–PMnN + NiZnFe2O4 by aerosol-deposition
Ceramics International, 2012Co-Authors: Jungho Ryu, Shashank Priya, Guifang Han, Woon-ha Yoon, Byung-dong Hahn, Jong-woo Kim, Dong-soo Park, Chang Woo Baek, Chee Sung Park, Dae Yong JeongAbstract:Abstract Highly dense magnetoelectric composite films with 10 μm-thick of high Piezoelectric Voltage coefficient material, 0.9Pb(Zr 57 Ti 43 )O 3 –0.1Pb(Mn 1/3 Nb 2/3 )O 3 (PZT–PMnN) and magnetostrictive material, Ni 0.8 Zn 0.2 Fe 2 O 4 (NZF), were fabricated on a platinized Si substrate using aerosol deposition (AD). With increasing magnetic NZF content, dielectric and ferroelectric properties were gradually decreased while magnetizations were improved. The 20% NZF added composite thick film were found to exhibit the maximum ME coefficient. This optimal NZF content is the same as that of bulk ME composite materials. It is noticeable that AD can control the content ratio of ME composite films by controlling the powder composition. The fabricated ME composite films have high ME Voltage coefficient coupling because of high density without severe inter-reactions of two phases.
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high magnetoelectric properties in 0 68pb mg 1 3 nb 2 3 o 0 32pbtio single crystal and terfenol d laminate composites
Journal of The Korean Ceramic Society, 2002Co-Authors: Jungho Ryu, Hyounee Kim, Kenji Uchino, Shashank Priya, Dwight ViehlandAbstract:Magnetoelectric(ME) laminate composites of Pb(Mg 1/3 NB 2/3 )O₃-PbTiO₃ (PMN-PT) and Terfenol-D were prepared by sandwiching single crystals of PMN-PT between Terfenol-D disks. The magnetoelectric Voltage coefficient (dE/dH) of the composite was determined to be 10.30 V/cm·Oe, at 1 kHz and under a dc magnetic bias of 0.4 T. The value of dE/dH is ∼80 times higher than either that of naturally occurring magnetoelectrics or artificially-grown magnetoelectric composites. This superior magnetoelectric Voltage coefficient is attributed to the high Piezoelectric Voltage constant as well as the high elastic compliance of PMN-PT single crystal and the large magnetostrictive response of Terfenol-D.
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magnetoelectric properties in Piezoelectric and magnetostrictive laminate composites
Japanese Journal of Applied Physics, 2001Co-Authors: Jungho Ryu, Kenji Uchino, Alfredo Vazquez Carazo, Hyounee KimAbstract:Magnetoelectric laminate composites of Piezoelectric-magnetostrictive materials were investigated. The composites were prepared by stacking and bonding Pb(Zr, Ti)O3 (PZT) and Terfenol-D disks. Experimental results indicated that the magnetoelectric Voltage coefficient, dE/dH, increased with decreasing thickness and increasing Piezoelectric Voltage constant (g31) of the PZT layer. We obtained the highest magnetoelectric Voltage coefficient of 4.68 V/cmOe at room temperature for the sample with high g33 PZT of 0.5 mm in thickness. This value is about 36 times higher than the best reported value.
Shashank Priya - One of the best experts on this subject based on the ideXlab platform.
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Giant Piezoelectric Voltage coefficient in grain-oriented modified PbTiO 3 material
Nature communications, 2016Co-Authors: Yongke Yan, Jie E. Zhou, Deepam Maurya, Yu U. Wang, Shashank PriyaAbstract:A rapid surge in the research on Piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide Piezoelectric materials with giant Piezoelectric Voltage coefficient (g, induced Voltage under applied stress) and high Curie temperature (Tc) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% texture) modified PbTiO3 ceramic that has a high Tc (364 °C) and an extremely large g33 (115 × 10-3 Vm N-1) in comparison with other known single-phase oxide materials. Our results reveal that self-polarization due to grain orientation along the spontaneous polarization direction plays an important role in achieving large Piezoelectric response in a domain motion-confined material. The phase field simulations confirm that the large Piezoelectric Voltage coefficient g33 originates from maximized Piezoelectric strain coefficient d33 and minimized dielectric permittivity ɛ33 in [001]-textured PbTiO3 ceramics where domain wall motions are absent.
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Giant Piezoelectric Voltage coefficient in grain-oriented modified PbTiO_3 material
Nature Communications, 2016Co-Authors: Yongke Yan, Jie E. Zhou, Deepam Maurya, Yu U. Wang, Shashank PriyaAbstract:A rapid surge in the research on Piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide Piezoelectric materials with giant Piezoelectric Voltage coefficient ( g , induced Voltage under applied stress) and high Curie temperature ( T _c) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% texture) modified PbTiO_3 ceramic that has a high T _c (364 °C) and an extremely large g _33 (115 × 10^−3 Vm N^−1) in comparison with other known single-phase oxide materials. Our results reveal that self-polarization due to grain orientation along the spontaneous polarization direction plays an important role in achieving large Piezoelectric response in a domain motion-confined material. The phase field simulations confirm that the large Piezoelectric Voltage coefficient g _33 originates from maximized Piezoelectric strain coefficient d _33 and minimized dielectric permittivity ɛ _33 in [001]-textured PbTiO_3 ceramics where domain wall motions are absent. High Piezoelectric Voltage coefficients drive the sensitivity of Piezoelectric sensors. Here, the authors synthesized textured Sm- and Mn-doped PbTiO_3ceramics and demonstrate significant enhancement in Voltage coefficient.
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giant Piezoelectric Voltage coefficient in grain oriented modified pbtio3 material
Nature Communications, 2016Co-Authors: Jie E. Zhou, Deepam Maurya, Yu U. Wang, Shashank PriyaAbstract:High Piezoelectric Voltage coefficients drive the sensitivity of Piezoelectric sensors. Here, the authors synthesized textured Sm- and Mn-doped PbTiO3 ceramics and demonstrate significant enhancement in Voltage coefficient.
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Magnetoelectric composite thick films of PZT–PMnN + NiZnFe2O4 by aerosol-deposition
Ceramics International, 2012Co-Authors: Jungho Ryu, Shashank Priya, Guifang Han, Woon-ha Yoon, Byung-dong Hahn, Jong-woo Kim, Dong-soo Park, Chang Woo Baek, Chee Sung Park, Dae Yong JeongAbstract:Abstract Highly dense magnetoelectric composite films with 10 μm-thick of high Piezoelectric Voltage coefficient material, 0.9Pb(Zr 57 Ti 43 )O 3 –0.1Pb(Mn 1/3 Nb 2/3 )O 3 (PZT–PMnN) and magnetostrictive material, Ni 0.8 Zn 0.2 Fe 2 O 4 (NZF), were fabricated on a platinized Si substrate using aerosol deposition (AD). With increasing magnetic NZF content, dielectric and ferroelectric properties were gradually decreased while magnetizations were improved. The 20% NZF added composite thick film were found to exhibit the maximum ME coefficient. This optimal NZF content is the same as that of bulk ME composite materials. It is noticeable that AD can control the content ratio of ME composite films by controlling the powder composition. The fabricated ME composite films have high ME Voltage coefficient coupling because of high density without severe inter-reactions of two phases.
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magnetoelectric laminate composite based tachometer for harsh environment applications
Applied Physics Letters, 2007Co-Authors: Robert Myers, Makarand Karmarkar, Rashed Adnan Islam, Shashank PriyaAbstract:This study reports the design, fabrication, and characterization of a tachometer utilizing magnetoelectric (ME) laminate composites with sandwich structure consisting of Pb(Zr,Ti)O3 (PZT) and Galfenol. High temperature characterization of Galfenol shows that it can sustain the magnetic property over 500°C. The Curie temperature of PZT compositions was in the range of 325–340°C. The magnitude of the ME coefficient was found to scale with the dimensionless ratio (d g/S), where d is the Piezoelectric strain constant, g is the Piezoelectric Voltage constant, and S is the elastic compliance. The tachometer design is based on the principle that when ME composite is exposed to oscillating magnetic field, it generates Voltage with the same frequency.
Jong-woo Kim - One of the best experts on this subject based on the ideXlab platform.
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Self-Growth of Centimeter-Scale Single Crystals by Normal Sintering Process in Modified Potassium Sodium Niobate Ceramics
Scientific Reports, 2015Co-Authors: Cheol-woo Ahn, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Jong-woo Kim, Joon-hwan Choi, Shujun Zhang, Ho-yong Lee, Si-young Choi, Dong-soo ParkAbstract:In this manuscript, an interesting phenomenon is reported. That is the self-growth of single crystals in Pb-free Piezoelectric ceramics. These crystals are several centimeters in size. They are grown without any seed addition through a normal sintering process in modified potassium sodium niobate ceramics. It has been achieved by the composition designed to compensate the Na^+ loss which occurs during the liquid phase sintering. The composition of the crystals is (K_0.4925Na_0.4925−xBa_0.015+x/2)Nb_0.995+xO_3 [x is determined by the Na^+ loss, due to Na_2O volatilization]. These crystals have high Piezoelectric Voltage coefficients (g_33, 131 10 ^ −3 Vm/N ), indicating that they are good candidates for Piezoelectric sensors and energy harvesting devices. We hope that this report can offer the opportunity for many researchers to have an interest in these crystals.
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Composition Design Rule for High Piezoelectric Voltage Coefficient in (K$_{0.5}$Na$_{0.5}$)NbO$_{3}$ Based Pb-Free Ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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composition design rule for high Piezoelectric Voltage coefficient in k _ 0 5 na _ 0 5 nbo _ 3 based pb free ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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Magnetoelectric composite thick films of PZT–PMnN + NiZnFe2O4 by aerosol-deposition
Ceramics International, 2012Co-Authors: Jungho Ryu, Shashank Priya, Guifang Han, Woon-ha Yoon, Byung-dong Hahn, Jong-woo Kim, Dong-soo Park, Chang Woo Baek, Chee Sung Park, Dae Yong JeongAbstract:Abstract Highly dense magnetoelectric composite films with 10 μm-thick of high Piezoelectric Voltage coefficient material, 0.9Pb(Zr 57 Ti 43 )O 3 –0.1Pb(Mn 1/3 Nb 2/3 )O 3 (PZT–PMnN) and magnetostrictive material, Ni 0.8 Zn 0.2 Fe 2 O 4 (NZF), were fabricated on a platinized Si substrate using aerosol deposition (AD). With increasing magnetic NZF content, dielectric and ferroelectric properties were gradually decreased while magnetizations were improved. The 20% NZF added composite thick film were found to exhibit the maximum ME coefficient. This optimal NZF content is the same as that of bulk ME composite materials. It is noticeable that AD can control the content ratio of ME composite films by controlling the powder composition. The fabricated ME composite films have high ME Voltage coefficient coupling because of high density without severe inter-reactions of two phases.
Woon-ha Yoon - One of the best experts on this subject based on the ideXlab platform.
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Self-Growth of Centimeter-Scale Single Crystals by Normal Sintering Process in Modified Potassium Sodium Niobate Ceramics
Scientific Reports, 2015Co-Authors: Cheol-woo Ahn, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Jong-woo Kim, Joon-hwan Choi, Shujun Zhang, Ho-yong Lee, Si-young Choi, Dong-soo ParkAbstract:In this manuscript, an interesting phenomenon is reported. That is the self-growth of single crystals in Pb-free Piezoelectric ceramics. These crystals are several centimeters in size. They are grown without any seed addition through a normal sintering process in modified potassium sodium niobate ceramics. It has been achieved by the composition designed to compensate the Na^+ loss which occurs during the liquid phase sintering. The composition of the crystals is (K_0.4925Na_0.4925−xBa_0.015+x/2)Nb_0.995+xO_3 [x is determined by the Na^+ loss, due to Na_2O volatilization]. These crystals have high Piezoelectric Voltage coefficients (g_33, 131 10 ^ −3 Vm/N ), indicating that they are good candidates for Piezoelectric sensors and energy harvesting devices. We hope that this report can offer the opportunity for many researchers to have an interest in these crystals.
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Composition Design Rule for High Piezoelectric Voltage Coefficient in (K$_{0.5}$Na$_{0.5}$)NbO$_{3}$ Based Pb-Free Ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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composition design rule for high Piezoelectric Voltage coefficient in k _ 0 5 na _ 0 5 nbo _ 3 based pb free ceramics
Japanese Journal of Applied Physics, 2012Co-Authors: Cheol-woo Ahn, Jungho Ryu, Guifang Han, Woon-ha Yoon, Jong-jin Choi, Byung-dong Hahn, Jong-woo Kim, Joon-hwan Choi, Dong-soo ParkAbstract:In this manuscript, the phase transition factor (Ft) was suggested as a design rule for high Piezoelectric Voltage coefficient in (K0.5Na0.5)NbO3 (KNN) based ceramics. The Ft consisted of the tolerance factor and electronegativity difference. High Piezoelectric Voltage coefficient was observed when the doping ratio for the starting point of phase transition (x*) was higher than 0.04 in KNN based ceramics. At the range of Ft 30 mVm/N) was observed in KNN based ceramics.
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Magnetoelectric composite thick films of PZT–PMnN + NiZnFe2O4 by aerosol-deposition
Ceramics International, 2012Co-Authors: Jungho Ryu, Shashank Priya, Guifang Han, Woon-ha Yoon, Byung-dong Hahn, Jong-woo Kim, Dong-soo Park, Chang Woo Baek, Chee Sung Park, Dae Yong JeongAbstract:Abstract Highly dense magnetoelectric composite films with 10 μm-thick of high Piezoelectric Voltage coefficient material, 0.9Pb(Zr 57 Ti 43 )O 3 –0.1Pb(Mn 1/3 Nb 2/3 )O 3 (PZT–PMnN) and magnetostrictive material, Ni 0.8 Zn 0.2 Fe 2 O 4 (NZF), were fabricated on a platinized Si substrate using aerosol deposition (AD). With increasing magnetic NZF content, dielectric and ferroelectric properties were gradually decreased while magnetizations were improved. The 20% NZF added composite thick film were found to exhibit the maximum ME coefficient. This optimal NZF content is the same as that of bulk ME composite materials. It is noticeable that AD can control the content ratio of ME composite films by controlling the powder composition. The fabricated ME composite films have high ME Voltage coefficient coupling because of high density without severe inter-reactions of two phases.