The Experts below are selected from a list of 52524 Experts worldwide ranked by ideXlab platform

Nobuyoshi Koshida - One of the best experts on this subject based on the ideXlab platform.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin film deposition in solutions
    Journal of Micro-nanolithography Mems and Moems, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Shinya Yoshida, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Kentaro Totsu
    Abstract:

    Abstract. Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electronsource, an alternative lithographic technology is presented based on two approaches: physical excitation invacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, annc-Si layer, an n þ -Si substrate, and an ohmic back contact. Under a biased condition, energetic electronsare uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is availablefor active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area:10× 10 μm 2 ) are fabricated on a silicon substrate by a conventional Planar Process, and then every emitteris bonded with the integrated driver using through-silicon-via interconnect technology. Another application isthe use of this emitter as an active electrode supplying highly reducing electrons into solutions. A verysmall amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven withoutusing any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge)films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indi-cate that there are no significant contaminations in deposited thin films.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin films deposition in solutions
    Proceedings of SPIE, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Takashi Yoshida, Hitoshi Nishino
    Abstract:

    Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, the alternative lithographic technology is presented based on the two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is a kind of metal-insulator-semiconductor (MIS) diode, composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each size: 10×10 μm2, pitch: 100 μm) are fabricated on silicon substrate by conventional Planar Process, and then every emitter is bonded with integrated complementary metal-oxide-semiconductor (CMOS) driver using through-silicon-via (TSV) interconnect technology. Electron multi-beams emitted from selected devices are focused by a micro-electro-mechanical system (MEMS) condenser lens array and introduced into an accelerating system with a demagnification factor of 100. The electron accelerating voltage is 5 kV. The designed size of each beam landing on the target is 10×10 nm2 in square. Here we discuss the fabrication Process of the emitter array with TSV holes, implementation of integrated ctive-matrix driver circuit, the bonding of these components, the construction of electron optics, and the overall operation in the exposure system including the correction of possible aberrations. The experimental results of this mask-less parallel pattern transfer are shown in terms of simple 1:1 projection and parallel lithography under an active-matrix drive scheme. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal (Cu, Ni, Co, and so on) and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films. The implication is that ballistic hot electrons injected into solutions with appropriate kinetic energies induce preferential reduction of positive ions in solutions with no by-products followed by atom migration, nuclei formation, and the subsequent thin film growth. The availability of this technique for depositing thin SiGe films is also demonstrated by using a mixture solution. When patterned fine emission windows are formed on the emitter surface, metal and semiconductor wires array are directly deposited in parallel.

Carliss Y Baldwin - One of the best experts on this subject based on the ideXlab platform.

  • design rules volume 2 chapter 12 the Planar Process and moore s law
    Social Science Research Network, 2021
    Co-Authors: Carliss Y Baldwin
    Abstract:

    Moore’s Law is the prediction that transistor densities of semiconductor chips will double, speeds double, and prices drop by half approximately every eighteen months to two years. The Law lies at the heart of the high rates of technical change observed in the computer, communication and software industries during the last fifty years. The purpose of this chapter is to explain the underpinnings of Moore’s Law and to assess whether the industry-wide rate of technical change is likely to continue. I first discuss the Law’s origin as an empirical observation and its grounding in the physics of semiconductors. I describe how the Law became established as a dynamic equilibrium among semiconductor manufacturers, and how it was challenged and reaffirmed several times. I explain how in the 1990s, the Law was institutionalized in series of an industry-wide roadmaps, which became self-fulfilling prophecies. I go on to describe the performance of semiconductor chips and companies in the five decades since the Law was first proposed. I end with a discussion of the physical limits that now constrain the operation of Moore’s Law and a description of other paths to improved performance that still remain to be explored.

Hitoshi Nishino - One of the best experts on this subject based on the ideXlab platform.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin films deposition in solutions
    Proceedings of SPIE, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Takashi Yoshida, Hitoshi Nishino
    Abstract:

    Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, the alternative lithographic technology is presented based on the two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is a kind of metal-insulator-semiconductor (MIS) diode, composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each size: 10×10 μm2, pitch: 100 μm) are fabricated on silicon substrate by conventional Planar Process, and then every emitter is bonded with integrated complementary metal-oxide-semiconductor (CMOS) driver using through-silicon-via (TSV) interconnect technology. Electron multi-beams emitted from selected devices are focused by a micro-electro-mechanical system (MEMS) condenser lens array and introduced into an accelerating system with a demagnification factor of 100. The electron accelerating voltage is 5 kV. The designed size of each beam landing on the target is 10×10 nm2 in square. Here we discuss the fabrication Process of the emitter array with TSV holes, implementation of integrated ctive-matrix driver circuit, the bonding of these components, the construction of electron optics, and the overall operation in the exposure system including the correction of possible aberrations. The experimental results of this mask-less parallel pattern transfer are shown in terms of simple 1:1 projection and parallel lithography under an active-matrix drive scheme. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal (Cu, Ni, Co, and so on) and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films. The implication is that ballistic hot electrons injected into solutions with appropriate kinetic energies induce preferential reduction of positive ions in solutions with no by-products followed by atom migration, nuclei formation, and the subsequent thin film growth. The availability of this technique for depositing thin SiGe films is also demonstrated by using a mixture solution. When patterned fine emission windows are formed on the emitter surface, metal and semiconductor wires array are directly deposited in parallel.

Naokatsu Ikegami - One of the best experts on this subject based on the ideXlab platform.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin film deposition in solutions
    Journal of Micro-nanolithography Mems and Moems, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Shinya Yoshida, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Kentaro Totsu
    Abstract:

    Abstract. Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electronsource, an alternative lithographic technology is presented based on two approaches: physical excitation invacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, annc-Si layer, an n þ -Si substrate, and an ohmic back contact. Under a biased condition, energetic electronsare uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is availablefor active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area:10× 10 μm 2 ) are fabricated on a silicon substrate by a conventional Planar Process, and then every emitteris bonded with the integrated driver using through-silicon-via interconnect technology. Another application isthe use of this emitter as an active electrode supplying highly reducing electrons into solutions. A verysmall amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven withoutusing any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge)films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indi-cate that there are no significant contaminations in deposited thin films.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin films deposition in solutions
    Proceedings of SPIE, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Takashi Yoshida, Hitoshi Nishino
    Abstract:

    Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, the alternative lithographic technology is presented based on the two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is a kind of metal-insulator-semiconductor (MIS) diode, composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each size: 10×10 μm2, pitch: 100 μm) are fabricated on silicon substrate by conventional Planar Process, and then every emitter is bonded with integrated complementary metal-oxide-semiconductor (CMOS) driver using through-silicon-via (TSV) interconnect technology. Electron multi-beams emitted from selected devices are focused by a micro-electro-mechanical system (MEMS) condenser lens array and introduced into an accelerating system with a demagnification factor of 100. The electron accelerating voltage is 5 kV. The designed size of each beam landing on the target is 10×10 nm2 in square. Here we discuss the fabrication Process of the emitter array with TSV holes, implementation of integrated ctive-matrix driver circuit, the bonding of these components, the construction of electron optics, and the overall operation in the exposure system including the correction of possible aberrations. The experimental results of this mask-less parallel pattern transfer are shown in terms of simple 1:1 projection and parallel lithography under an active-matrix drive scheme. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal (Cu, Ni, Co, and so on) and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films. The implication is that ballistic hot electrons injected into solutions with appropriate kinetic energies induce preferential reduction of positive ions in solutions with no by-products followed by atom migration, nuclei formation, and the subsequent thin film growth. The availability of this technique for depositing thin SiGe films is also demonstrated by using a mixture solution. When patterned fine emission windows are formed on the emitter surface, metal and semiconductor wires array are directly deposited in parallel.

Junichi Shirakashi - One of the best experts on this subject based on the ideXlab platform.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin film deposition in solutions
    Journal of Micro-nanolithography Mems and Moems, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Shinya Yoshida, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Kentaro Totsu
    Abstract:

    Abstract. Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electronsource, an alternative lithographic technology is presented based on two approaches: physical excitation invacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, annc-Si layer, an n þ -Si substrate, and an ohmic back contact. Under a biased condition, energetic electronsare uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is availablefor active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area:10× 10 μm 2 ) are fabricated on a silicon substrate by a conventional Planar Process, and then every emitteris bonded with the integrated driver using through-silicon-via interconnect technology. Another application isthe use of this emitter as an active electrode supplying highly reducing electrons into solutions. A verysmall amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven withoutusing any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge)films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indi-cate that there are no significant contaminations in deposited thin films.

  • development of ballistic hot electron emitter and its applications to parallel Processing active matrix massive direct write lithography in vacuum and thin films deposition in solutions
    Proceedings of SPIE, 2015
    Co-Authors: Nobuyoshi Koshida, Naokatsu Ikegami, Hiroshi Miyaguchi, Akira Kojima, Masanori Muroyama, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Takashi Yoshida, Hitoshi Nishino
    Abstract:

    Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, the alternative lithographic technology is presented based on the two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is a kind of metal-insulator-semiconductor (MIS) diode, composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each size: 10×10 μm2, pitch: 100 μm) are fabricated on silicon substrate by conventional Planar Process, and then every emitter is bonded with integrated complementary metal-oxide-semiconductor (CMOS) driver using through-silicon-via (TSV) interconnect technology. Electron multi-beams emitted from selected devices are focused by a micro-electro-mechanical system (MEMS) condenser lens array and introduced into an accelerating system with a demagnification factor of 100. The electron accelerating voltage is 5 kV. The designed size of each beam landing on the target is 10×10 nm2 in square. Here we discuss the fabrication Process of the emitter array with TSV holes, implementation of integrated ctive-matrix driver circuit, the bonding of these components, the construction of electron optics, and the overall operation in the exposure system including the correction of possible aberrations. The experimental results of this mask-less parallel pattern transfer are shown in terms of simple 1:1 projection and parallel lithography under an active-matrix drive scheme. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal (Cu, Ni, Co, and so on) and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films. The implication is that ballistic hot electrons injected into solutions with appropriate kinetic energies induce preferential reduction of positive ions in solutions with no by-products followed by atom migration, nuclei formation, and the subsequent thin film growth. The availability of this technique for depositing thin SiGe films is also demonstrated by using a mixture solution. When patterned fine emission windows are formed on the emitter surface, metal and semiconductor wires array are directly deposited in parallel.