The Experts below are selected from a list of 9219 Experts worldwide ranked by ideXlab platform
Weili Zhang - One of the best experts on this subject based on the ideXlab platform.
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impact of sol gel precursor treatment with Preheating Temperature on properties of cu2znsns4 thin film and its photovoltaic solar cell
Journal of Alloys and Compounds, 2016Co-Authors: Xinghong Zhang, Jianjun Chen, S H Song, Weili ZhangAbstract:Abstract Cu 2 ZnSnS 4 (CZTS) thin films are deposited by spin-coating deposition of sol–gel precursor followed by sulfurization under a sulfur-containing atmosphere. The impact of the sol–gel precursor treatment with Preheating Temperature on the properties of the CZTS thin films and its photovoltaic solar cell has been investigated. XRD analysis shows that all the deposited CZTS thin films exhibit kesterite crystal structure and own a best crystallinity when the sol–gel precursor is preheated at 300 °C. Raman analysis shows that ZnS as secondary phase has formed on surface of the deposited CZTS thin films and its contents decrease as the Preheating Temperature increases. Morphological analysis shows that the sol–gel precursor preheated at 300 °C can contribute to the improvement of grain size and crystallinity. Component analysis shows that the higher Preheating Temperature can contribute to the decrease of tin loss, ZnS content and carbon content but an increase of sodium content. Photoelectric properties analysis shows that the CZTS thin films as a function of Preheating Temperature at 300 °C have best values with a band gap of 1.45 eV, a resistivity of 8.42 Ω cm, a carrier concentration of 1.26 × 10 17 cm −3 and a mobility of 5.22 cm 2 V −1 s −1 , respectively. Finally, a solar cell device built with the best CZTS thin films exhibits a best efficiency of 1.45%.
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Impact of sol–gel precursor treatment with Preheating Temperature on properties of Cu2ZnSnS4 thin film and its photovoltaic solar cell
Journal of Alloys and Compounds, 2016Co-Authors: Xinghong Zhang, Jianjun Chen, S H Song, Weili ZhangAbstract:Abstract Cu 2 ZnSnS 4 (CZTS) thin films are deposited by spin-coating deposition of sol–gel precursor followed by sulfurization under a sulfur-containing atmosphere. The impact of the sol–gel precursor treatment with Preheating Temperature on the properties of the CZTS thin films and its photovoltaic solar cell has been investigated. XRD analysis shows that all the deposited CZTS thin films exhibit kesterite crystal structure and own a best crystallinity when the sol–gel precursor is preheated at 300 °C. Raman analysis shows that ZnS as secondary phase has formed on surface of the deposited CZTS thin films and its contents decrease as the Preheating Temperature increases. Morphological analysis shows that the sol–gel precursor preheated at 300 °C can contribute to the improvement of grain size and crystallinity. Component analysis shows that the higher Preheating Temperature can contribute to the decrease of tin loss, ZnS content and carbon content but an increase of sodium content. Photoelectric properties analysis shows that the CZTS thin films as a function of Preheating Temperature at 300 °C have best values with a band gap of 1.45 eV, a resistivity of 8.42 Ω cm, a carrier concentration of 1.26 × 10 17 cm −3 and a mobility of 5.22 cm 2 V −1 s −1 , respectively. Finally, a solar cell device built with the best CZTS thin films exhibits a best efficiency of 1.45%.
Liding Wang - One of the best experts on this subject based on the ideXlab platform.
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Effect of Preheating and annealing Temperatures on quality characteristics of ZnO thin film prepared by sol-gel method
Materials Chemistry and Physics, 2006Co-Authors: Minrui Wang, Yan Cui, Wen Chen, Jing Wang, Liding WangAbstract:In order to fabricate qualified ZnO piezoelectric thin films by sol-gel method, the relationships between the heat treatment Temperatures (Preheating Temperature and annealing Temperature) and the quality characteristics of ZnO piezoelectric thin films (c-axis orientation, residual stress, grain size, roughness and resistivity) were investigated. The chemical composition of the precursor sol and the intermediate produced in the films heating process were analyzed by TGA-SDTA and FT-IR. The c-axis orientation and the residual stress of the ZnO thin film were identified by XRD. The morphologies, roughness and grain size were observed and estimated by AFM. The I-V characteristics were measured by using semiconductor characterization system. Experimental results show that the c-axis orientation is determined by both Preheating and annealing Temperatures, and that the residual stress, grain size, roughness and resistance of the ZnO thin films are mainly influenced by the annealing Temperature. A qualified ZnO piezoelectric thin film has been prepared by using sol-gel with Preheating Temperature 400 °C for 10 min and annealing Temperature 700 °C for 30 min. © 2005 Elsevier B.V. All rights reserved.
Xinghong Zhang - One of the best experts on this subject based on the ideXlab platform.
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impact of sol gel precursor treatment with Preheating Temperature on properties of cu2znsns4 thin film and its photovoltaic solar cell
Journal of Alloys and Compounds, 2016Co-Authors: Xinghong Zhang, Jianjun Chen, S H Song, Weili ZhangAbstract:Abstract Cu 2 ZnSnS 4 (CZTS) thin films are deposited by spin-coating deposition of sol–gel precursor followed by sulfurization under a sulfur-containing atmosphere. The impact of the sol–gel precursor treatment with Preheating Temperature on the properties of the CZTS thin films and its photovoltaic solar cell has been investigated. XRD analysis shows that all the deposited CZTS thin films exhibit kesterite crystal structure and own a best crystallinity when the sol–gel precursor is preheated at 300 °C. Raman analysis shows that ZnS as secondary phase has formed on surface of the deposited CZTS thin films and its contents decrease as the Preheating Temperature increases. Morphological analysis shows that the sol–gel precursor preheated at 300 °C can contribute to the improvement of grain size and crystallinity. Component analysis shows that the higher Preheating Temperature can contribute to the decrease of tin loss, ZnS content and carbon content but an increase of sodium content. Photoelectric properties analysis shows that the CZTS thin films as a function of Preheating Temperature at 300 °C have best values with a band gap of 1.45 eV, a resistivity of 8.42 Ω cm, a carrier concentration of 1.26 × 10 17 cm −3 and a mobility of 5.22 cm 2 V −1 s −1 , respectively. Finally, a solar cell device built with the best CZTS thin films exhibits a best efficiency of 1.45%.
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Impact of sol–gel precursor treatment with Preheating Temperature on properties of Cu2ZnSnS4 thin film and its photovoltaic solar cell
Journal of Alloys and Compounds, 2016Co-Authors: Xinghong Zhang, Jianjun Chen, S H Song, Weili ZhangAbstract:Abstract Cu 2 ZnSnS 4 (CZTS) thin films are deposited by spin-coating deposition of sol–gel precursor followed by sulfurization under a sulfur-containing atmosphere. The impact of the sol–gel precursor treatment with Preheating Temperature on the properties of the CZTS thin films and its photovoltaic solar cell has been investigated. XRD analysis shows that all the deposited CZTS thin films exhibit kesterite crystal structure and own a best crystallinity when the sol–gel precursor is preheated at 300 °C. Raman analysis shows that ZnS as secondary phase has formed on surface of the deposited CZTS thin films and its contents decrease as the Preheating Temperature increases. Morphological analysis shows that the sol–gel precursor preheated at 300 °C can contribute to the improvement of grain size and crystallinity. Component analysis shows that the higher Preheating Temperature can contribute to the decrease of tin loss, ZnS content and carbon content but an increase of sodium content. Photoelectric properties analysis shows that the CZTS thin films as a function of Preheating Temperature at 300 °C have best values with a band gap of 1.45 eV, a resistivity of 8.42 Ω cm, a carrier concentration of 1.26 × 10 17 cm −3 and a mobility of 5.22 cm 2 V −1 s −1 , respectively. Finally, a solar cell device built with the best CZTS thin films exhibits a best efficiency of 1.45%.
Qianming Gong - One of the best experts on this subject based on the ideXlab platform.
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the effects of Preheating Temperature on cuingase2 cds interface and the device performances
Solar Energy, 2019Co-Authors: Chen Wang, Daming Zhuang, Ming Zhao, Yixuan Wu, Lan Hu, Yuxian Li, Qianming GongAbstract:Abstract Cu(In, Ga)Se2 (CIGS) solar cells were fabricated by selenizing Cu-In-Ga precursors obtained by sputtering a Cu-In-Ga ternary alloy target. A Preheating process was introduced during the selenization process to optimize the interface between the absorption layer and the buffer layer to improve the device performance. The results showed that the quality of the CIGS/CdS interface changed significantly with different Preheating Temperatures. A smoother interface indicated better p-n junction performance because of a more uniform distribution and better coverage of the buffer layer and intrinsic ZnO, as well as less interface recombination. Furthermore, there is less residue of Cu–Se compounds as the Preheating Temperature increases. Finally, the highest device efficiency of 14.35% was achieved at a Preheating Temperature of 300 °C.
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The effects of Preheating Temperature on CuInGaSe2/CdS interface and the device performances
Solar Energy, 2019Co-Authors: Chen Wang, Daming Zhuang, Ming Zhao, Yixuan Wu, Lan Hu, Yuxian Li, Qianming GongAbstract:Abstract Cu(In, Ga)Se2 (CIGS) solar cells were fabricated by selenizing Cu-In-Ga precursors obtained by sputtering a Cu-In-Ga ternary alloy target. A Preheating process was introduced during the selenization process to optimize the interface between the absorption layer and the buffer layer to improve the device performance. The results showed that the quality of the CIGS/CdS interface changed significantly with different Preheating Temperatures. A smoother interface indicated better p-n junction performance because of a more uniform distribution and better coverage of the buffer layer and intrinsic ZnO, as well as less interface recombination. Furthermore, there is less residue of Cu–Se compounds as the Preheating Temperature increases. Finally, the highest device efficiency of 14.35% was achieved at a Preheating Temperature of 300 °C.
Minrui Wang - One of the best experts on this subject based on the ideXlab platform.
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Effect of Preheating and annealing Temperatures on quality characteristics of ZnO thin film prepared by sol-gel method
Materials Chemistry and Physics, 2006Co-Authors: Minrui Wang, Yan Cui, Wen Chen, Jing Wang, Liding WangAbstract:In order to fabricate qualified ZnO piezoelectric thin films by sol-gel method, the relationships between the heat treatment Temperatures (Preheating Temperature and annealing Temperature) and the quality characteristics of ZnO piezoelectric thin films (c-axis orientation, residual stress, grain size, roughness and resistivity) were investigated. The chemical composition of the precursor sol and the intermediate produced in the films heating process were analyzed by TGA-SDTA and FT-IR. The c-axis orientation and the residual stress of the ZnO thin film were identified by XRD. The morphologies, roughness and grain size were observed and estimated by AFM. The I-V characteristics were measured by using semiconductor characterization system. Experimental results show that the c-axis orientation is determined by both Preheating and annealing Temperatures, and that the residual stress, grain size, roughness and resistance of the ZnO thin films are mainly influenced by the annealing Temperature. A qualified ZnO piezoelectric thin film has been prepared by using sol-gel with Preheating Temperature 400 °C for 10 min and annealing Temperature 700 °C for 30 min. © 2005 Elsevier B.V. All rights reserved.