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Joseph L. Cecchia - One of the best experts on this subject based on the ideXlab platform.
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Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
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investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate based slurries i role of alumina and potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
David J. Stein - One of the best experts on this subject based on the ideXlab platform.
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Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
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investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate based slurries i role of alumina and potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
Weitsu Tseng - One of the best experts on this subject based on the ideXlab platform.
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a comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
Journal of The Electrochemical Society, 1999Co-Authors: Weitsu Tseng, Jyhhwa Chin, Leechieh KangAbstract:velocity variation on polish rate, based on the original Preston Equation, Tseng’s model, 1 and a modified Preston Equation which takes into account the deterioration in the abrasion efficiency of slurry. Comparisons (curve fitting) will be made between experimental polish data and the simulated results based on the three models. The pressure dependence of the removal rate models and other parameters (e.g., weighting factor) are evaluated. The feasibility of the three models is discussed.
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re examination of pressure and speed dependences of removal rate during chemical mechanical polishing processes
Journal of The Electrochemical Society, 1997Co-Authors: Weitsu Tseng, Yinglang WangAbstract:A new removal rate model which is a modification to the Preston Equation is developed to re‐account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical‐mechanical polishing (CMP) process. The removal rate is first expressed as a linear function of both normal and shear stresses. The analogy of the CMP removal process to traveling indenters is considered and the stresses acting upon the abrasive particles (indenters) are formulated using previous models based on principles of elasticity and fluid mechanics. An expression is then derived which predicts the (pressure)5/6 and (speed)1/2 dependences of the removal rate. Experimental results with thermal oxides are consistent with the predictions.
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Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes
Journal of The Electrochemical Society, 1997Co-Authors: Weitsu Tseng, Yinglang WangAbstract:A new removal rate model which is a modification to the Preston Equation is developed to re‐account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical‐mechanical polishing (CMP) process. The removal rate is first expressed as a linear function of both normal and shear stresses. The analogy of the CMP removal process to traveling indenters is considered and the stresses acting upon the abrasive particles (indenters) are formulated using previous models based on principles of elasticity and fluid mechanics. An expression is then derived which predicts the (pressure)5/6 and (speed)1/2 dependences of the removal rate. Experimental results with thermal oxides are consistent with the predictions.
Dale L. Hetherington - One of the best experts on this subject based on the ideXlab platform.
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Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
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investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate based slurries i role of alumina and potassium lodate
Journal of The Electrochemical Society, 1999Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. CecchiaAbstract:We investigated aspects of the kinetics of tungsten chemical mechanical polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten polish rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, polish pressure, polish rotation rate, and pad type. We found that the polish rate data fit a multiterm regression model better than the empirical Preston Equation. Polish rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.
Yinglang Wang - One of the best experts on this subject based on the ideXlab platform.
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re examination of pressure and speed dependences of removal rate during chemical mechanical polishing processes
Journal of The Electrochemical Society, 1997Co-Authors: Weitsu Tseng, Yinglang WangAbstract:A new removal rate model which is a modification to the Preston Equation is developed to re‐account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical‐mechanical polishing (CMP) process. The removal rate is first expressed as a linear function of both normal and shear stresses. The analogy of the CMP removal process to traveling indenters is considered and the stresses acting upon the abrasive particles (indenters) are formulated using previous models based on principles of elasticity and fluid mechanics. An expression is then derived which predicts the (pressure)5/6 and (speed)1/2 dependences of the removal rate. Experimental results with thermal oxides are consistent with the predictions.
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Re‐examination of Pressure and Speed Dependences of Removal Rate during Chemical‐Mechanical Polishing Processes
Journal of The Electrochemical Society, 1997Co-Authors: Weitsu Tseng, Yinglang WangAbstract:A new removal rate model which is a modification to the Preston Equation is developed to re‐account the dependence of removal rate on the down force (pressure) and rotation speed during the chemical‐mechanical polishing (CMP) process. The removal rate is first expressed as a linear function of both normal and shear stresses. The analogy of the CMP removal process to traveling indenters is considered and the stresses acting upon the abrasive particles (indenters) are formulated using previous models based on principles of elasticity and fluid mechanics. An expression is then derived which predicts the (pressure)5/6 and (speed)1/2 dependences of the removal rate. Experimental results with thermal oxides are consistent with the predictions.