The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Tadahiro Ohmi - One of the best experts on this subject based on the ideXlab platform.
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improvement of nonaqueous anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Meeting Abstracts, 2008Co-Authors: Minoru Tahara, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Yasuhiro Kasase, Tadahiro OhmiAbstract:The authors have developed advanced Al2O3 passivation films on aluminum-alloy (Al/Mg/Zr) surface in nonaqueous electrolyte solution. It has some features that are more excellent than porous alumite films grown in aqueous electrolyte solution. Moisture outgassing from the nonaqueous anodic oxides is very much limited. Even at elevated temperature, the nonaqueous anodic oxides develop no heat clacks. They feature outstanding resistance to corrosive Process gases. However, machine strength is not enough in nonaqueous anodic oxide films that uses ethylene glycol (EG) as a nonaqueous solvent because the thickness of them can be formed only up to about 300 nm. Therefore, it doesn't have an enough performance as a passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. Thus, the authors have improved the thickness of the nonaqueous anodic oxide films for the improvement of mechanical strength. It is necessary to rise with the voltage to impress while suppressing the electrolysis of H2O to thicken the nonaqueous anodic oxides by lowering the relative dielectric constant of the nonaqueous electrolytic solution. Therefore, the authors used the diethyleneglycol (DEG) that the relative dielectric constant as shown in figure 1 was low for a change of the EG as a nonaqueous solvent and performed the optimization about the viscosity of the nonaqueous electrolyte solution as shown in figure 2. The optimization such as use of a low nonaqueous solvent of the relative dielectric constant, adjustment of the nonaqueous electrolytic solution’s viscosity and etc. made it possible to impress the voltage highly as shown figure 3, and the nonaqueous anode oxides were improved on the passivation films of high quality and high thickness. The thick nonaqueous anodic oxides will be put to practical use as the passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. 0 10 20 30 40 50 60 70 80 90
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development of barrier anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Journal of The Electrochemical Society, 2007Co-Authors: Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Tadahiro OhmiAbstract:Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma Process Equipment to drastically improve the Process performance. There exists a severe disadvantage for aluminum-alloy Process chambers, however, i.e., very poor anticorrosion capability to halogen gas plasmas. Thus, the authors have developed very advanced Al 2 O 3 passivation films having a thickness of 0.1-0.4 μm on aluminum-alloy surfaces exhibiting complete anticorrosion resistance for various radicals such as hydrogen radicals H*, oxygen radicals O*, halogen radicals (Cl*,Br*,F*), and simultaneously various ion bombardments by using nonaqueous anodic oxidations. Porous alumite (alumilite) films having a thickness of 50-200 μm have been provided on aluminum-alloy chamber surfaces as anticorrosion films using aqueous anodic oxidations, particularly for reactive ion etching Process chambers. But alumite films (Al 2 O 3 nH 2 O) include huge amounts of water molecules, resulting in the generation of water vapors in the Process chamber and leading to the degradation of Process quality and the generation of too many particles in the Process chamber coming from water-molecule-originated gas-phase reactions. 1 Plasma Process performance of LSI/FPD manufacturing is drastically enhanced by introducing a newly developed Al 2 O 3 passivated aluminum-alloy chamber to overcome all disadvantages of current plasma Process Equipment.
Yasuhiro Kawase - One of the best experts on this subject based on the ideXlab platform.
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development of barrier anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Journal of The Electrochemical Society, 2007Co-Authors: Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Tadahiro OhmiAbstract:Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma Process Equipment to drastically improve the Process performance. There exists a severe disadvantage for aluminum-alloy Process chambers, however, i.e., very poor anticorrosion capability to halogen gas plasmas. Thus, the authors have developed very advanced Al 2 O 3 passivation films having a thickness of 0.1-0.4 μm on aluminum-alloy surfaces exhibiting complete anticorrosion resistance for various radicals such as hydrogen radicals H*, oxygen radicals O*, halogen radicals (Cl*,Br*,F*), and simultaneously various ion bombardments by using nonaqueous anodic oxidations. Porous alumite (alumilite) films having a thickness of 50-200 μm have been provided on aluminum-alloy chamber surfaces as anticorrosion films using aqueous anodic oxidations, particularly for reactive ion etching Process chambers. But alumite films (Al 2 O 3 nH 2 O) include huge amounts of water molecules, resulting in the generation of water vapors in the Process chamber and leading to the degradation of Process quality and the generation of too many particles in the Process chamber coming from water-molecule-originated gas-phase reactions. 1 Plasma Process performance of LSI/FPD manufacturing is drastically enhanced by introducing a newly developed Al 2 O 3 passivated aluminum-alloy chamber to overcome all disadvantages of current plasma Process Equipment.
Yasuyuki Shirai - One of the best experts on this subject based on the ideXlab platform.
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improvement of nonaqueous anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Meeting Abstracts, 2008Co-Authors: Minoru Tahara, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Yasuhiro Kasase, Tadahiro OhmiAbstract:The authors have developed advanced Al2O3 passivation films on aluminum-alloy (Al/Mg/Zr) surface in nonaqueous electrolyte solution. It has some features that are more excellent than porous alumite films grown in aqueous electrolyte solution. Moisture outgassing from the nonaqueous anodic oxides is very much limited. Even at elevated temperature, the nonaqueous anodic oxides develop no heat clacks. They feature outstanding resistance to corrosive Process gases. However, machine strength is not enough in nonaqueous anodic oxide films that uses ethylene glycol (EG) as a nonaqueous solvent because the thickness of them can be formed only up to about 300 nm. Therefore, it doesn't have an enough performance as a passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. Thus, the authors have improved the thickness of the nonaqueous anodic oxide films for the improvement of mechanical strength. It is necessary to rise with the voltage to impress while suppressing the electrolysis of H2O to thicken the nonaqueous anodic oxides by lowering the relative dielectric constant of the nonaqueous electrolytic solution. Therefore, the authors used the diethyleneglycol (DEG) that the relative dielectric constant as shown in figure 1 was low for a change of the EG as a nonaqueous solvent and performed the optimization about the viscosity of the nonaqueous electrolyte solution as shown in figure 2. The optimization such as use of a low nonaqueous solvent of the relative dielectric constant, adjustment of the nonaqueous electrolytic solution’s viscosity and etc. made it possible to impress the voltage highly as shown figure 3, and the nonaqueous anode oxides were improved on the passivation films of high quality and high thickness. The thick nonaqueous anodic oxides will be put to practical use as the passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. 0 10 20 30 40 50 60 70 80 90
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development of barrier anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Journal of The Electrochemical Society, 2007Co-Authors: Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Tadahiro OhmiAbstract:Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma Process Equipment to drastically improve the Process performance. There exists a severe disadvantage for aluminum-alloy Process chambers, however, i.e., very poor anticorrosion capability to halogen gas plasmas. Thus, the authors have developed very advanced Al 2 O 3 passivation films having a thickness of 0.1-0.4 μm on aluminum-alloy surfaces exhibiting complete anticorrosion resistance for various radicals such as hydrogen radicals H*, oxygen radicals O*, halogen radicals (Cl*,Br*,F*), and simultaneously various ion bombardments by using nonaqueous anodic oxidations. Porous alumite (alumilite) films having a thickness of 50-200 μm have been provided on aluminum-alloy chamber surfaces as anticorrosion films using aqueous anodic oxidations, particularly for reactive ion etching Process chambers. But alumite films (Al 2 O 3 nH 2 O) include huge amounts of water molecules, resulting in the generation of water vapors in the Process chamber and leading to the degradation of Process quality and the generation of too many particles in the Process chamber coming from water-molecule-originated gas-phase reactions. 1 Plasma Process performance of LSI/FPD manufacturing is drastically enhanced by introducing a newly developed Al 2 O 3 passivated aluminum-alloy chamber to overcome all disadvantages of current plasma Process Equipment.
Masafumi Kitano - One of the best experts on this subject based on the ideXlab platform.
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improvement of nonaqueous anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Meeting Abstracts, 2008Co-Authors: Minoru Tahara, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Yasuhiro Kasase, Tadahiro OhmiAbstract:The authors have developed advanced Al2O3 passivation films on aluminum-alloy (Al/Mg/Zr) surface in nonaqueous electrolyte solution. It has some features that are more excellent than porous alumite films grown in aqueous electrolyte solution. Moisture outgassing from the nonaqueous anodic oxides is very much limited. Even at elevated temperature, the nonaqueous anodic oxides develop no heat clacks. They feature outstanding resistance to corrosive Process gases. However, machine strength is not enough in nonaqueous anodic oxide films that uses ethylene glycol (EG) as a nonaqueous solvent because the thickness of them can be formed only up to about 300 nm. Therefore, it doesn't have an enough performance as a passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. Thus, the authors have improved the thickness of the nonaqueous anodic oxide films for the improvement of mechanical strength. It is necessary to rise with the voltage to impress while suppressing the electrolysis of H2O to thicken the nonaqueous anodic oxides by lowering the relative dielectric constant of the nonaqueous electrolytic solution. Therefore, the authors used the diethyleneglycol (DEG) that the relative dielectric constant as shown in figure 1 was low for a change of the EG as a nonaqueous solvent and performed the optimization about the viscosity of the nonaqueous electrolyte solution as shown in figure 2. The optimization such as use of a low nonaqueous solvent of the relative dielectric constant, adjustment of the nonaqueous electrolytic solution’s viscosity and etc. made it possible to impress the voltage highly as shown figure 3, and the nonaqueous anode oxides were improved on the passivation films of high quality and high thickness. The thick nonaqueous anodic oxides will be put to practical use as the passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. 0 10 20 30 40 50 60 70 80 90
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development of barrier anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Journal of The Electrochemical Society, 2007Co-Authors: Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Tadahiro OhmiAbstract:Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma Process Equipment to drastically improve the Process performance. There exists a severe disadvantage for aluminum-alloy Process chambers, however, i.e., very poor anticorrosion capability to halogen gas plasmas. Thus, the authors have developed very advanced Al 2 O 3 passivation films having a thickness of 0.1-0.4 μm on aluminum-alloy surfaces exhibiting complete anticorrosion resistance for various radicals such as hydrogen radicals H*, oxygen radicals O*, halogen radicals (Cl*,Br*,F*), and simultaneously various ion bombardments by using nonaqueous anodic oxidations. Porous alumite (alumilite) films having a thickness of 50-200 μm have been provided on aluminum-alloy chamber surfaces as anticorrosion films using aqueous anodic oxidations, particularly for reactive ion etching Process chambers. But alumite films (Al 2 O 3 nH 2 O) include huge amounts of water molecules, resulting in the generation of water vapors in the Process chamber and leading to the degradation of Process quality and the generation of too many particles in the Process chamber coming from water-molecule-originated gas-phase reactions. 1 Plasma Process performance of LSI/FPD manufacturing is drastically enhanced by introducing a newly developed Al 2 O 3 passivated aluminum-alloy chamber to overcome all disadvantages of current plasma Process Equipment.
Fumikazu Mizutani - One of the best experts on this subject based on the ideXlab platform.
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improvement of nonaqueous anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Meeting Abstracts, 2008Co-Authors: Minoru Tahara, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Yasuhiro Kasase, Tadahiro OhmiAbstract:The authors have developed advanced Al2O3 passivation films on aluminum-alloy (Al/Mg/Zr) surface in nonaqueous electrolyte solution. It has some features that are more excellent than porous alumite films grown in aqueous electrolyte solution. Moisture outgassing from the nonaqueous anodic oxides is very much limited. Even at elevated temperature, the nonaqueous anodic oxides develop no heat clacks. They feature outstanding resistance to corrosive Process gases. However, machine strength is not enough in nonaqueous anodic oxide films that uses ethylene glycol (EG) as a nonaqueous solvent because the thickness of them can be formed only up to about 300 nm. Therefore, it doesn't have an enough performance as a passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. Thus, the authors have improved the thickness of the nonaqueous anodic oxide films for the improvement of mechanical strength. It is necessary to rise with the voltage to impress while suppressing the electrolysis of H2O to thicken the nonaqueous anodic oxides by lowering the relative dielectric constant of the nonaqueous electrolytic solution. Therefore, the authors used the diethyleneglycol (DEG) that the relative dielectric constant as shown in figure 1 was low for a change of the EG as a nonaqueous solvent and performed the optimization about the viscosity of the nonaqueous electrolyte solution as shown in figure 2. The optimization such as use of a low nonaqueous solvent of the relative dielectric constant, adjustment of the nonaqueous electrolytic solution’s viscosity and etc. made it possible to impress the voltage highly as shown figure 3, and the nonaqueous anode oxides were improved on the passivation films of high quality and high thickness. The thick nonaqueous anodic oxides will be put to practical use as the passivation films for the plasma Process Equipment of the LSI/FPD manufacturing. 0 10 20 30 40 50 60 70 80 90
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development of barrier anodic oxide al2o3 passivations of aluminum alloy surface for lsi fpd plasma Process Equipment
Journal of The Electrochemical Society, 2007Co-Authors: Yasuhiro Kawase, Yasuyuki Shirai, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Tadahiro OhmiAbstract:Aluminum alloys are key materials for advanced large-scale integration (LSI)/flat panel display (FPD) plasma Process Equipment to drastically improve the Process performance. There exists a severe disadvantage for aluminum-alloy Process chambers, however, i.e., very poor anticorrosion capability to halogen gas plasmas. Thus, the authors have developed very advanced Al 2 O 3 passivation films having a thickness of 0.1-0.4 μm on aluminum-alloy surfaces exhibiting complete anticorrosion resistance for various radicals such as hydrogen radicals H*, oxygen radicals O*, halogen radicals (Cl*,Br*,F*), and simultaneously various ion bombardments by using nonaqueous anodic oxidations. Porous alumite (alumilite) films having a thickness of 50-200 μm have been provided on aluminum-alloy chamber surfaces as anticorrosion films using aqueous anodic oxidations, particularly for reactive ion etching Process chambers. But alumite films (Al 2 O 3 nH 2 O) include huge amounts of water molecules, resulting in the generation of water vapors in the Process chamber and leading to the degradation of Process quality and the generation of too many particles in the Process chamber coming from water-molecule-originated gas-phase reactions. 1 Plasma Process performance of LSI/FPD manufacturing is drastically enhanced by introducing a newly developed Al 2 O 3 passivated aluminum-alloy chamber to overcome all disadvantages of current plasma Process Equipment.
