Propagation Loss

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Nadir Dagli - One of the best experts on this subject based on the ideXlab platform.

P T Ho - One of the best experts on this subject based on the ideXlab platform.

  • Propagation Loss in single mode gaas algaas microring resonators measurement and model
    Journal of Lightwave Technology, 2001
    Co-Authors: P.p. Absil, J.v. Hryniewicz, P T Ho
    Abstract:

    We report Propagation Loss measurements in single-mode GaAs-AlGaAs racetrack microresonators with bending radii from 2.7 /spl mu/m to 9.7 /spl mu/m. The experimental data were found to be in good agreement with a physical-Loss model which accounts for the bending Loss, the scattering Loss due to surface roughness on the waveguide sidewalls, and the transition Loss at the straight-to-bend waveguide junctions. The model also enables us to identify the dominant Loss mechanisms in semiconductor microcavities. We found that for racetracks with large bending radii (greater than 4 /spl mu/m, in our case) the Loss due to surface-roughness scattering in the curved waveguides dominates, whereas for small-radius rings, the modal mismatch at the straight-to-bend waveguide junctions causes the biggest Loss. This result suggests that circular-shaped rings are preferable in the realization of ultrasmall low-Loss microcavities. We also show that the round-trip Propagation Loss in small-radius racetrack microresonators can be minimized by introducing a lateral offset at the straight-to-bend waveguide junctions.

Jaehyuk Shin - One of the best experts on this subject based on the ideXlab platform.

Eric Cassan - One of the best experts on this subject based on the ideXlab platform.

  • Propagation Loss in single mode ultrasmall square silicon on insulator optical waveguides
    Journal of Lightwave Technology, 2006
    Co-Authors: Frederic Grillot, Laurent Vivien, S Laval, Eric Cassan
    Abstract:

    Silicon-on-insulator (SOI) optical waveguides insure high electromagnetic field confinement but suffer both from sidewall roughness responsible of scattering effects and from leakage toward the silicon substrate. These two mechanisms are the main sources of Loss in such optical waveguides. Considering the case of single-mode ultrasmall square SOI waveguides, Propagation Loss is calculated at telecommunication wavelengths taking into account these two Loss contributions. Leakage toward the substrate and scattering effects strongly depend on the waveguide size as well as on the operating wavelength.

  • size influence on the Propagation Loss induced by sidewall roughness in ultrasmall soi waveguides
    IEEE Photonics Technology Letters, 2004
    Co-Authors: Frederic Grillot, Laurent Vivien, S Laval, D Pascal, Eric Cassan
    Abstract:

    Silicon-on-insulator (SOI) optical waveguides with high electromagnetic field confinement suffer from sidewall roughness which is responsible for strong scattering effects. This letter reports a numerical investigation on the size influence of ultrasmall SOI waveguides on the Propagation Loss due to sidewall roughness. It is shown that for a size smaller than 260 /spl times/ 260 nm the roughness-induced Propagation Loss decreases. As the optical mode confinement is reduced, a very low Loss light coupling from and to a single-mode fiber can be achieved with Propagation Loss as low as 0.5 dB/cm for a 150 /spl times/ 150 nm cross-sectional waveguide.

Yuchia Chang - One of the best experts on this subject based on the ideXlab platform.