The Experts below are selected from a list of 291 Experts worldwide ranked by ideXlab platform
G. Terefenko - One of the best experts on this subject based on the ideXlab platform.
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Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
IEEE MTT-S International Microwave Symposium Digest 2003, 2003Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, D.p. Farrell, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
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Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
J.a. Herbsommer - One of the best experts on this subject based on the ideXlab platform.
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Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
IEEE MTT-S International Microwave Symposium Digest 2003, 2003Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, D.p. Farrell, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
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Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
O. Lopez - One of the best experts on this subject based on the ideXlab platform.
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Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
IEEE MTT-S International Microwave Symposium Digest 2003, 2003Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, D.p. Farrell, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
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Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
W. Brown - One of the best experts on this subject based on the ideXlab platform.
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Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
IEEE MTT-S International Microwave Symposium Digest 2003, 2003Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, D.p. Farrell, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
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Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
H. Safar - One of the best experts on this subject based on the ideXlab platform.
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Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors
IEEE MTT-S International Microwave Symposium Digest 2003, 2003Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, D.p. Farrell, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
-
Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002Co-Authors: J.a. Herbsommer, H. Safar, W. Brown, P. Gammel, O. Lopez, G. TerefenkoAbstract:We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a Proprietary Process, we fabricated such devices with a thickness as reduced as 40μm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.
