The Experts below are selected from a list of 100356 Experts worldwide ranked by ideXlab platform
Igor Stolichnov - One of the best experts on this subject based on the ideXlab platform.
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of polarization switching vary depending on the driving voltage amplitude. The polarization switching endurance under high-amplitude cycling is governed only by the top SRO interface, whereas the degradation properties of the bottom Pt interface do not play any role. On the contrary, for driving voltage amplitudes lower than 80 kV/cm the bottom Pt-interface degradation is a limiting factor for the fatigue performance. (ii) The fatigue in PZT films is controlled by a mechanism related to the inhibition of near-by-electrode nucleation of opposite domains, as suggested earlier. (C) 1999 American Institute of Physics. [S0003-6951(99)04623-9].
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb,La)(Zr,Ti)O3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of p...
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injection controlled size effect on switching of ferroelectric thin films
Applied Physics Letters, 1999Co-Authors: A K Tagantsev, Igor StolichnovAbstract:The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field of the capacitor as a function of both film thickness and maximal polarization of the switching cycle. The predictions of the model are verified by electrical measurements on sol–gel derived Pb(Zr, Ti)O3 thin films of thickness ranging from 100 to 1000 nm with Pt electrodes. The model gives a good descriPtion of the size effect on switching in the Pt/Pb(Zr, Ti)O3/Pt System and enables an explanation for a much smaller magnitude of this effect in Bi-containing and oxide–electrode thin films.
Shishou Kang - One of the best experts on this subject based on the ideXlab platform.
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electrical field enhanced interfacial dzyaloshinskii moriya interaction in mgo fe Pt System
Applied Physics Letters, 2018Co-Authors: Wangyang Zhang, Hai Zhong, R Zang, Yaming Zhang, Shuyun Yu, Shishou KangAbstract:We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.
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electrical field enhanced interfacial dzyaloshinskii moriya interaction in mgo fe Pt System
Applied Physics Letters, 2018Co-Authors: Wangyang Zhang, Hai Zhong, R Zang, Yaming Zhang, Shishou Kang, Guangbing Han, Guolei Liu, S S Yan, L M MeiAbstract:We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.
Wangyang Zhang - One of the best experts on this subject based on the ideXlab platform.
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electrical field enhanced interfacial dzyaloshinskii moriya interaction in mgo fe Pt System
Applied Physics Letters, 2018Co-Authors: Wangyang Zhang, Hai Zhong, R Zang, Yaming Zhang, Shuyun Yu, Shishou KangAbstract:We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.
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electrical field enhanced interfacial dzyaloshinskii moriya interaction in mgo fe Pt System
Applied Physics Letters, 2018Co-Authors: Wangyang Zhang, Hai Zhong, R Zang, Yaming Zhang, Shishou Kang, Guangbing Han, Guolei Liu, S S Yan, L M MeiAbstract:We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light scattering measurements based on the frequency nonreciprocity of spin waves in a ferromagnet. The magnitude of the induced DMI is found to linearly increase as a function of electric field intensity. The efficiency of electric field control of the interfacial DMI characterized as a ratio of the DMI energy change to the electric field, which is found to be equal to 67 fJ/(Vm) with a positive electric field. We further demonstrate that the origin of the enhanced DMI results from the MgO/Fe interface. The Rashba spin-orbit coupling and electric field induced anisotropy at the MgO/Fe interface might be responsible for the enhanced interfacial DMI. Our findings open up a way for exploring the spintronic devices with a tunable DMI.
Mineharu Tsukada - One of the best experts on this subject based on the ideXlab platform.
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb,La)(Zr,Ti)O3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of p...
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of polarization switching vary depending on the driving voltage amplitude. The polarization switching endurance under high-amplitude cycling is governed only by the top SRO interface, whereas the degradation properties of the bottom Pt interface do not play any role. On the contrary, for driving voltage amplitudes lower than 80 kV/cm the bottom Pt-interface degradation is a limiting factor for the fatigue performance. (ii) The fatigue in PZT films is controlled by a mechanism related to the inhibition of near-by-electrode nucleation of opposite domains, as suggested earlier. (C) 1999 American Institute of Physics. [S0003-6951(99)04623-9].
A K Tagantsev - One of the best experts on this subject based on the ideXlab platform.
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of polarization switching vary depending on the driving voltage amplitude. The polarization switching endurance under high-amplitude cycling is governed only by the top SRO interface, whereas the degradation properties of the bottom Pt interface do not play any role. On the contrary, for driving voltage amplitudes lower than 80 kV/cm the bottom Pt-interface degradation is a limiting factor for the fatigue performance. (ii) The fatigue in PZT films is controlled by a mechanism related to the inhibition of near-by-electrode nucleation of opposite domains, as suggested earlier. (C) 1999 American Institute of Physics. [S0003-6951(99)04623-9].
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top interface controlled switching and fatigue endurance of pb la zr ti o3 ferroelectric capacitors
Applied Physics Letters, 1999Co-Authors: Igor Stolichnov, A K Tagantsev, N Setter, Jeffrey S Cross, Mineharu TsukadaAbstract:Mechanisms of polarization switching and fatigue in (Pb,La)(Zr,Ti)O3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switching polarization on the driving alternating-current (ac) electric field amplitude. Specifically, for high ac electric field amplitude it shows good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of the conventional Pt/PLZT/Pt capacitors is observed. Based on the analysis of our results on fatigue and leakage conduction we conclude that: (i) In asymmetrical Pt/SRO/PLZT/Pt System the physical mechanisms of p...
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injection controlled size effect on switching of ferroelectric thin films
Applied Physics Letters, 1999Co-Authors: A K Tagantsev, Igor StolichnovAbstract:The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field of the capacitor as a function of both film thickness and maximal polarization of the switching cycle. The predictions of the model are verified by electrical measurements on sol–gel derived Pb(Zr, Ti)O3 thin films of thickness ranging from 100 to 1000 nm with Pt electrodes. The model gives a good descriPtion of the size effect on switching in the Pt/Pb(Zr, Ti)O3/Pt System and enables an explanation for a much smaller magnitude of this effect in Bi-containing and oxide–electrode thin films.