The Experts below are selected from a list of 2163 Experts worldwide ranked by ideXlab platform
Bing Xie - One of the best experts on this subject based on the ideXlab platform.
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recycle gallium and arsenic from Gaas based e wastes via pyrolysis vacuum metallurgy separation theory and feasibility
ACS Sustainable Chemistry & Engineering, 2018Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced...
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Recycle Gallium and Arsenic from Gaas-Based E‑Wastes via Pyrolysis–Vacuum Metallurgy Separation: Theory and Feasibility
2017Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced little. This study will reveal the speciation transformation of gallium and arsenic during vacuum heat treatment, which can provide the theoretical foundation for recycling gallium and arsenic from LEDs and other Gaas-based e-wastes through pyrolysis and vacuum metallurgy separation
Lu Zhan - One of the best experts on this subject based on the ideXlab platform.
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recycle gallium and arsenic from Gaas based e wastes via pyrolysis vacuum metallurgy separation theory and feasibility
ACS Sustainable Chemistry & Engineering, 2018Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced...
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Recycle Gallium and Arsenic from Gaas-Based E‑Wastes via Pyrolysis–Vacuum Metallurgy Separation: Theory and Feasibility
2017Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced little. This study will reveal the speciation transformation of gallium and arsenic during vacuum heat treatment, which can provide the theoretical foundation for recycling gallium and arsenic from LEDs and other Gaas-based e-wastes through pyrolysis and vacuum metallurgy separation
Yuhan Xia - One of the best experts on this subject based on the ideXlab platform.
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recycle gallium and arsenic from Gaas based e wastes via pyrolysis vacuum metallurgy separation theory and feasibility
ACS Sustainable Chemistry & Engineering, 2018Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced...
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Recycle Gallium and Arsenic from Gaas-Based E‑Wastes via Pyrolysis–Vacuum Metallurgy Separation: Theory and Feasibility
2017Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced little. This study will reveal the speciation transformation of gallium and arsenic during vacuum heat treatment, which can provide the theoretical foundation for recycling gallium and arsenic from LEDs and other Gaas-based e-wastes through pyrolysis and vacuum metallurgy separation
Fafa Xia - One of the best experts on this subject based on the ideXlab platform.
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recycle gallium and arsenic from Gaas based e wastes via pyrolysis vacuum metallurgy separation theory and feasibility
ACS Sustainable Chemistry & Engineering, 2018Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced...
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Recycle Gallium and Arsenic from Gaas-Based E‑Wastes via Pyrolysis–Vacuum Metallurgy Separation: Theory and Feasibility
2017Co-Authors: Lu Zhan, Fafa Xia, Yuhan Xia, Bing XieAbstract:This work proposed a novel method of pyrolysis and vacuum metallurgy to recycle gallium and arsenic from Gaas-based e-wastes, which may cause arsenic contamination and gallium waste if treated improperly. As a typical Gaas-based e-waste, the light-emitting diode (LED) was studied in this paper. Pure Gaas chips were first adopted to study the vacuum separation behavior of gallium and arsenic. Then, Gaas chips and packaging materials were mixed together to study the effect of packaging material pyrolysis on the subsequent vacuum metallurgy separation behavior of Gaas chips. This indicated that gallium and arsenic can be recycled efficiently at the heating temperature of 1273 K, the holding time of 60 min, and the vacuum pressure of ∼20 Pa, and the total recovery efficiency can reach 95 wt %. The recovered gallium and arsenic were condensed and collected in respective zones. However, because of the effect of organic material pyrolysis, some gallium was oxidized as gallium oxides, while arsenic was influenced little. This study will reveal the speciation transformation of gallium and arsenic during vacuum heat treatment, which can provide the theoretical foundation for recycling gallium and arsenic from LEDs and other Gaas-based e-wastes through pyrolysis and vacuum metallurgy separation
Kejian Yang - One of the best experts on this subject based on the ideXlab platform.
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nonlinear optical property of a bi doped Gaas semiconductor saturable absorber
Optics Express, 2018Co-Authors: Shengzhi Zhao, Kejian YangAbstract:By using an Open-Aperture Z-scan technique with both femtosecond and nanosecond laser pulses at 1064nm, the nonlinear optical properties of Gaas and Bi-doped Gaas, including the saturable absorption property and reverse saturable absorption property are systematically measured and analyzed directly in detail. Compared to Pure Gaas, Bi-doped Gaas has a lower saturation intensity, wider saturable absorption energy region, lower two-photon absorption coefficient, better saturable absorption response and stronger optical limiting response. The results suggest that the incorporation of Bismuth in Gaas is an effective way of improving the nonlinear optical properties of Gaas, which provide crucial experimental evidence for that the characteristics of the passively Q-switched laser with Bi-doped Gaas saturable absorber is better than Pure Gaas.
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diode pumped doubly passively q switched nd luvo4 laser with cr4 yag saturable absorber and Gaas output coupler
Laser Physics Letters, 2009Co-Authors: Kang Cheng, Kejian Yang, Shigang Zhao, G H ZhangAbstract:A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr4+:YAG saturable absorber and Gaas output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with Pure Gaas. By using two Cr4+:YAG saturable absorbers with different small-signal transmissions T0 = 0.71 and T0 = 0.81, the maximum average output power are 1.15 W and 1.31 W at the incident pump power of 11.23 W, corresponding to optical conversion efficiencies of 10.2% and 11.7%. At the same incident pump power, the minimum pulse widths of 4.18 ns and 5.42 ns can be obtained at T0 = 0.71 and T0 = 0.81, respectively. The pulse repetition rate and the single-pulse peak power of the laser are also measured.
