The Experts below are selected from a list of 1995 Experts worldwide ranked by ideXlab platform
Wenke Weinreich - One of the best experts on this subject based on the ideXlab platform.
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frequency domain analysis of Pyroelectric response in silicon doped hafnium oxide hfo2 thin films
Applied Physics Letters, 2018Co-Authors: C Mart, M Czernohorsky, S Zybell, Thomas Kampfe, Wenke WeinreichAbstract:The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.
Osamu Tabata - One of the best experts on this subject based on the ideXlab platform.
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monolithic Pyroelectric infrared image sensor using pvdf thin film
Ieej Transactions on Sensors and Micromachines, 1997Co-Authors: Norio Fujitsuka, Jiro Sakata, Yukio Miyachi, Kentaro Mizuno, Kazuo Ohtsuka, Yasunori Taga, Osamu TabataAbstract:A 16×16 monolithic Pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a Pyroelectric Material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600V/W and a detectivlty of 1.6×107cmHz1/2W-1 have been realized with a sensing area of 75×75μm2.
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monolithic Pyroelectric infrared image sensor using pvdf thin film
Sensors, 1997Co-Authors: Norio Fujitsuka, Jiro Sakata, Yukio Miyachi, Kentaro Mizuno, Kazuo Ohtsuka, Yasunori Taga, Osamu TabataAbstract:A 16/spl times/16 monolithic Pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a Pyroelectric Material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6/spl times/10/sup 7/ cm Hz/sup 1/2/ W/sup -1/ have been realized with a sensing area of 75/spl times/75 /spl mu/m/sup 2/.
C Mart - One of the best experts on this subject based on the ideXlab platform.
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frequency domain analysis of Pyroelectric response in silicon doped hafnium oxide hfo2 thin films
Applied Physics Letters, 2018Co-Authors: C Mart, M Czernohorsky, S Zybell, Thomas Kampfe, Wenke WeinreichAbstract:The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.
Norio Fujitsuka - One of the best experts on this subject based on the ideXlab platform.
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monolithic Pyroelectric infrared image sensor using pvdf thin film
Ieej Transactions on Sensors and Micromachines, 1997Co-Authors: Norio Fujitsuka, Jiro Sakata, Yukio Miyachi, Kentaro Mizuno, Kazuo Ohtsuka, Yasunori Taga, Osamu TabataAbstract:A 16×16 monolithic Pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a Pyroelectric Material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600V/W and a detectivlty of 1.6×107cmHz1/2W-1 have been realized with a sensing area of 75×75μm2.
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monolithic Pyroelectric infrared image sensor using pvdf thin film
Sensors, 1997Co-Authors: Norio Fujitsuka, Jiro Sakata, Yukio Miyachi, Kentaro Mizuno, Kazuo Ohtsuka, Yasunori Taga, Osamu TabataAbstract:A 16/spl times/16 monolithic Pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a Pyroelectric Material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6/spl times/10/sup 7/ cm Hz/sup 1/2/ W/sup -1/ have been realized with a sensing area of 75/spl times/75 /spl mu/m/sup 2/.
S Zybell - One of the best experts on this subject based on the ideXlab platform.
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frequency domain analysis of Pyroelectric response in silicon doped hafnium oxide hfo2 thin films
Applied Physics Letters, 2018Co-Authors: C Mart, M Czernohorsky, S Zybell, Thomas Kampfe, Wenke WeinreichAbstract:The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.The Pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the Pyroelectric Material by a deposited nickel strip is used to achieve fast thermal cycles. Over the whole frequency range, a distinct Pyroelectric response is registered. A Pyroelectric coefficient of −72 μC/m2K is obtained at a frequency of 10 Hz, which is in good agreement with earlier low-frequency measurements. The Pyroelectric current is evaluated with respect to electric field cycling, where a successive increase is observed during wake-up. By comparing measurement results in the low- and high-frequency limit, primary and secondary Pyroelectric coefficients of −53 μC/m2K and −19 μC/m2K are estimated, respectively. Si-doped HfO2 is a promising Material for future energy harvesting and IR sensor applications due to environmental friendliness and CMOS compatible manufacturing.
