The Experts below are selected from a list of 6201 Experts worldwide ranked by ideXlab platform
James S. Harris - One of the best experts on this subject based on the ideXlab platform.
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Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si Substrate for Modulators
International Summer Session: Lasers and Their Applications, 2011Co-Authors: Xiaochi Chen, Yiwen Rong, Yijie Huo, Theodore I. Kamins, Ed Fei, Xi Liu, James S. HarrisAbstract:We investigate the growth and optical characterization of Ge/SiGe quantum wells on silicon substrate to exploit its strong Quantum-Confined Stark Effect (QCSE) for electroabsorption modulator in long wavelength regime. Further, we design and fabricate devices based on this approach and investigate the high-speed modulation performance of the device.
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Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si
IEEE Journal of Selected Topics in Quantum Electronics, 2010Co-Authors: Yiwen Rong, Yijie Huo, Marco Fiorentino, Theodore I. Kamins, Tomasz J. Ochalski, Michael Renne Ty Tan, Guillaume Huyet, James S. HarrisAbstract:In this paper, we present observations of quantum confinement and Quantum-Confined Stark Effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting Effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-?m-sized modulators.
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High speed optical modulation in Ge quantum wells using quantum confined Stark Effect
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Yiwen Rong, Yijie Huo, Marco Fiorentino, Theodore I. Kamins, Tomasz J. Ochalski, Lars Thylén, M. Chacinski, James S. HarrisAbstract:We designed the coplanar high-speed modulator with Ge/SiGe quantum wells, and demonstrated 25GHz of modulation with 3.125GHz of eye diagram using Quantum-Confined Stark Effect.
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The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications
2007 4th IEEE International Conference on Group IV Photonics, 2007Co-Authors: Jonathan E. Roth, Theodore I. Kamins, James S. Harris, Onur Fidaner, Rebecca K. Schaevitz, Elizabeth H. Edwards, Yu-hsuan Kuo, David A. B. MillerAbstract:The recent discovery of the quantum confined Stark Effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.
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Quantum-Confined Stark Effect of GaInNAs(Sb) quantum wells at 1300–1600nm
Applied Physics Letters, 2004Co-Authors: Vincenzo Lordi, Homan B. Yuen, Seth R. Bank, James S. HarrisAbstract:We report the measurement of electroabsorption spectra from GaInNAs and GaInNAsSb quantum wells grown on GaAs showing Quantum-Confined Stark Effect behavior suitable for optical modulation at 1300 and 1550nm wavelength, respectively. The high quality of our material is evidenced by sharp exciton resonances with a full width at half maximum
B. C. Cavenett - One of the best experts on this subject based on the ideXlab platform.
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II–VI quantum confined Stark Effect waveguide modulators
Applied Physics Letters, 1996Co-Authors: P.j. Thompson, S. Y. Wang, Kevin Alan Prior, G. Horsburgh, T.a. Steele, B. C. CavenettAbstract:Quantum confined Stark Effect p‐i‐n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro‐optic Effect observed as a superimposed secondary Effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration.
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ZnSe/ZnCdSe quantum confined Stark Effect waveguide modulator
Journal of Crystal Growth, 1996Co-Authors: P.j. Thompson, S. Y. Wang, Kevin Alan Prior, G. Horsburgh, T.a. Steele, B. C. CavenettAbstract:Abstract In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark Effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic Effect was also observed as a superimposed secondary Effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.
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ZnSe-ZnCdSe quantum confined Stark Effect modulators
Applied Physics Letters, 1993Co-Authors: S. Y. Wang, Yoichi Kawakami, Joe Leigh Simpson, H. Stewart, Kevin Alan Prior, B. C. CavenettAbstract:We report room temperature operation of a II‐VI p‐i‐n quantum confined Stark Effect modulator using a ZnSe‐Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p‐n junction. A n‐type ZnSe layer was used as a novel contact to the p‐type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
Robert A. Taylor - One of the best experts on this subject based on the ideXlab platform.
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Quantum confined Stark Effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods
Nanotechnology, 2010Co-Authors: Young S. Park, Tae W. Kang, Mark J Holmes, Robert A. TaylorAbstract:We have investigated, using micro-photoluminescence, the quantum confined Stark Effect in an In(x)Ga(1-x)N/GaN multi-quantum disk structure at the tip of a single GaN nanorod. A strong and sharp emission line from the In(x)Ga(1-x)N/GaN quantum disks near 3.26 eV was observed. The peak energy of the emission line was observed to blue-shift with increasing excitation power, indicating a quantum confined Stark Effect. Furthermore, both the blue-shift and the intensity of the emission saturate with increasing excitation power. The temperature-dependence of the 3.26 eV emission line has also been investigated.
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Quantum confined Stark Effect and corresponding lifetime reduction in a single InxGa1−xN quantum disk
Applied Physics Letters, 2009Co-Authors: Mark J Holmes, Young Soo Park, Jamie H. Warner, Robert A. TaylorAbstract:Time-integrated and time-resolved microphotoluminescence studies were carried out on InxGa1−xN quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ∼3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark Effect. Due to the reduced band bending and resulting increased overlap of the confined electron and hole wave functions, the lifetime of the emission was measured to decrease with increasing excitation power. The saturation of the blueshift and lifetime reduction follows that of the peak intensity, indicating a Stark screening process.
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Quantum-Confined Stark Effect in a single InGaN quantum dot under a lateral electric field
Applied Physics Letters, 2005Co-Authors: J.w. Robinson, Robert A. Taylor, Kwan H. Lee, James H. Rice, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, David G. Hasko, G. Andrew D. BriggsAbstract:The Effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The Quantum-Confined Stark Effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field.
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Simulation of the Quantum-Confined Stark Effect in a single InGaN quantum dot
NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices 2005., 1Co-Authors: Kwan H. Lee, Robert A. Taylor, J.w. Robinson, James H. Rice, Rachel A. Oliver, Menno J. Kappers, Colin J. HumphreysAbstract:By means of a 3D self-consistent numerical simulation we have calculated the Effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the Quantum-Confined Stark Effect has both permanent dipole moment and polarizability components.
S. Y. Wang - One of the best experts on this subject based on the ideXlab platform.
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II–VI quantum confined Stark Effect waveguide modulators
Applied Physics Letters, 1996Co-Authors: P.j. Thompson, S. Y. Wang, Kevin Alan Prior, G. Horsburgh, T.a. Steele, B. C. CavenettAbstract:Quantum confined Stark Effect p‐i‐n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro‐optic Effect observed as a superimposed secondary Effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration.
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ZnSe/ZnCdSe quantum confined Stark Effect waveguide modulator
Journal of Crystal Growth, 1996Co-Authors: P.j. Thompson, S. Y. Wang, Kevin Alan Prior, G. Horsburgh, T.a. Steele, B. C. CavenettAbstract:Abstract In this paper we report the first waveguide modulator, grown on a GaAs substrate by molecular beam epitaxy, to use an undoped ZnSe ZnCdSe multi quantum well structure as the guiding layer with doped ZnSe layers acting as the surrounding cladding. The quantum confined Stark Effect was observed in this device and used to produce an intensity modulation at wavelengths of 496 and 501 nm. A transverse linear electro-optic Effect was also observed as a superimposed secondary Effect on the intensity modulation at 514 nm in the form of phase modulation in the output of the same device.
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ZnSe-ZnCdSe quantum confined Stark Effect modulators
Applied Physics Letters, 1993Co-Authors: S. Y. Wang, Yoichi Kawakami, Joe Leigh Simpson, H. Stewart, Kevin Alan Prior, B. C. CavenettAbstract:We report room temperature operation of a II‐VI p‐i‐n quantum confined Stark Effect modulator using a ZnSe‐Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p‐n junction. A n‐type ZnSe layer was used as a novel contact to the p‐type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
Eli Kapon - One of the best experts on this subject based on the ideXlab platform.
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Two-dimensional Quantum-Confined Stark Effect in V-groove quantum wires: Excited state spectroscopy and theory
Applied Physics Letters, 1999Co-Authors: Helge Weman, M.-a. Dupertuis, E. Martinet, Alok Rudra, Klaus Leifer, Eli KaponAbstract:We report on the electric field Effects in photoluminescence (PL) and PL excitation (PLE) measurements of reverse-biased GaAs V-groove quantum wires. We observe large redshifts (9 meV at −65 kV/cm) of PL and PLE peaks as well as field dependent intensity and polarization anisotropy variations, which are analyzed by a two-dimensional quantum confined Stark Effect model.
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Quantum confined Stark Effect in quantum wires: Wave function splitting and cascading
Europhysics Letters (EPL), 1998Co-Authors: M.-a. Dupertuis, E. Martinet, Helge Weman, Eli KaponAbstract:We show that the two-dimensional quantum confined Stark Effect in a semiconductor quantum wire can display novel behaviour, i.e. wave function splitting and cascading. No analog to these phenomena can be found in bulk material or quantum wells. The consequences of these Effects on Stark shifts, oscillator strengths and electroabsorption spectra are explored numerically using k·p theory. A non-trivial prediction of our model is that, for the case of hole wave function splitting, the cascading of the ladder of states gives rise to observable duplications of the lowest peaks in the interband absorption spectra.