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Luke J. Mawst - One of the best experts on this subject based on the ideXlab platform.
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low threshold 1317 nm ingaasn Quantum Well lasers with gaasn barriers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Jengya Yeh, Luke J. MawstAbstract:Very low threshold-current-density InGaAsN Quantum-Well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the Quantum Well, and to improve the hole confinement inside the Quantum Well. RT threshold current densities of only 210–270 A/cm2 are measured for InGaAsN Quantum-Well lasers (Lcav=1000–2000 μm) with an emission wavelength of 1317 nm.
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experimental evidence of carrier leakage in ingaasn Quantum Well lasers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Jengya Yeh, Luke J. MawstAbstract:Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN Quantum Well lasers. The utilization of the direct barriers of GaAs0.85P0.15 instead of GaAs, surrounding the InGaAsN Quantum-Well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90–100 °C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (Lcav=2000 μm) with GaAs0.85P0.15-direct barriers at temperature of 80 and 90 °C, respectively.
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the role of hole leakage in 1300 nm ingaasn Quantum Well lasers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Luke J. MawstAbstract:We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs Quantum Wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN Quantum Well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN Quantum-Well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices.
Nelson Tansu - One of the best experts on this subject based on the ideXlab platform.
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low threshold 1317 nm ingaasn Quantum Well lasers with gaasn barriers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Jengya Yeh, Luke J. MawstAbstract:Very low threshold-current-density InGaAsN Quantum-Well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the Quantum Well, and to improve the hole confinement inside the Quantum Well. RT threshold current densities of only 210–270 A/cm2 are measured for InGaAsN Quantum-Well lasers (Lcav=1000–2000 μm) with an emission wavelength of 1317 nm.
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experimental evidence of carrier leakage in ingaasn Quantum Well lasers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Jengya Yeh, Luke J. MawstAbstract:Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN Quantum Well lasers. The utilization of the direct barriers of GaAs0.85P0.15 instead of GaAs, surrounding the InGaAsN Quantum-Well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90–100 °C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (Lcav=2000 μm) with GaAs0.85P0.15-direct barriers at temperature of 80 and 90 °C, respectively.
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the role of hole leakage in 1300 nm ingaasn Quantum Well lasers
Applied Physics Letters, 2003Co-Authors: Nelson Tansu, Luke J. MawstAbstract:We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs Quantum Wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN Quantum Well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN Quantum-Well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices.
Larry A. Coldren - One of the best experts on this subject based on the ideXlab platform.
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a Quantum Well intermixing process for wavelength agile photonic integrated circuits
IEEE Journal of Selected Topics in Quantum Electronics, 2002Co-Authors: Erik J Skogen, Steven P Denbaars, J S Barton, Larry A. ColdrenAbstract:Wavelength-agile photonic integrated circuits are fabricated using a one-step ion implantation Quantum-Well intermixing process. In this paper, we discuss, the issues in processing optimized widely tunable multisection lasers using this technique and present the results achieved using this process. This Quantum-Well intermixing process is general in its application and can be used to monolithically integrate a wide variety of optoelectronic components with widely tunable lasers.
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Tunable sampled-grating DBR lasers using Quantum-Well intermixing
IEEE Photonics Technology Letters, 2002Co-Authors: E.j. Skogen, Steven P Denbaars, J S Barton, Larry A. ColdrenAbstract:Widely tunable lasers are key components for wavelength division multiplexing fiber optic networks. They reduce cost in sparing, enable dynamic networking applications, and present opportunities for future monolithically integrated wavelength division multiplexing components. The sampled-grating distributed Bragg reflector (SGDBR) laser is ideal for these purposes. The authors present a centered Quantum-Well SGDBR laser which uses Quantum-Well intermixing in order to improve device characteristics over previous designs. The mode overlap is improved by 50% over the offset Quantum-Well design, improving the modal gain. Current injection tuning in the intermixed material is demonstrated for the first time; the maximum modal group index change was measured to be 1%.
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transport limits in high speed Quantum Well lasers experiment and theory
IEEE Photonics Technology Letters, 1992Co-Authors: Radhakrishnan L Nagarajan, John E Bowers, M Ishikawa, Toru Fukushima, R S Geels, Larry A. ColdrenAbstract:It is shown experimentally that the modulation bandwidth of Quantum Well lasers can be reduced by a factor of six due to carrier transport across undoped layers of the laser as in the separate confinement heterostructure (SCH). Analytical expressions are given for the modulation response function, resonance frequency, damping rate and K factor to include carrier transport, and it is shown that carrier transport is responsible for a low-frequency rolloff which limits the modulation response of Quantum-Well lasers. It also shown that carrier transport leads to a reduction in the effective differential gain, while the gain compression factor remains largely unaffected by it. >
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
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high speed Quantum Well lasers and carrier transport effects
IEEE Journal of Quantum Electronics, 1992Co-Authors: Radhakrishnan L Nagarajan, M Ishikawa, Toru Fukushima, R S Geels, John E BowersAbstract:Carrier transport can significantly affect the high-speed properties of Quantum-Well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in Quantum-Well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport. >
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transport limits in high speed Quantum Well lasers experiment and theory
IEEE Photonics Technology Letters, 1992Co-Authors: Radhakrishnan L Nagarajan, John E Bowers, M Ishikawa, Toru Fukushima, R S Geels, Larry A. ColdrenAbstract:It is shown experimentally that the modulation bandwidth of Quantum Well lasers can be reduced by a factor of six due to carrier transport across undoped layers of the laser as in the separate confinement heterostructure (SCH). Analytical expressions are given for the modulation response function, resonance frequency, damping rate and K factor to include carrier transport, and it is shown that carrier transport is responsible for a low-frequency rolloff which limits the modulation response of Quantum-Well lasers. It also shown that carrier transport leads to a reduction in the effective differential gain, while the gain compression factor remains largely unaffected by it. >
Radhakrishnan L Nagarajan - One of the best experts on this subject based on the ideXlab platform.
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high speed Quantum Well lasers and carrier transport effects
IEEE Journal of Quantum Electronics, 1992Co-Authors: Radhakrishnan L Nagarajan, M Ishikawa, Toru Fukushima, R S Geels, John E BowersAbstract:Carrier transport can significantly affect the high-speed properties of Quantum-Well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in Quantum-Well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport. >
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transport limits in high speed Quantum Well lasers experiment and theory
IEEE Photonics Technology Letters, 1992Co-Authors: Radhakrishnan L Nagarajan, John E Bowers, M Ishikawa, Toru Fukushima, R S Geels, Larry A. ColdrenAbstract:It is shown experimentally that the modulation bandwidth of Quantum Well lasers can be reduced by a factor of six due to carrier transport across undoped layers of the laser as in the separate confinement heterostructure (SCH). Analytical expressions are given for the modulation response function, resonance frequency, damping rate and K factor to include carrier transport, and it is shown that carrier transport is responsible for a low-frequency rolloff which limits the modulation response of Quantum-Well lasers. It also shown that carrier transport leads to a reduction in the effective differential gain, while the gain compression factor remains largely unaffected by it. >
