The Experts below are selected from a list of 15597 Experts worldwide ranked by ideXlab platform
J Rappich - One of the best experts on this subject based on the ideXlab platform.
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efficient minority carrier detrapping mediating the Radiation Hardness of triple cation perovskite solar cells under proton irRadiation
Energy and Environmental Science, 2019Co-Authors: Felix Lang, Jurgen Bundesmann, Andrea Denker, Steve Albrecht, Giovanni Landi, Marko Jost, Heinzchristoph Neitzert, J RappichAbstract:Highly efficient perovskite based solar cells have the potential to be a game-changing solar array technology for space applications that can be flexible, truly roll-able, ultra-lightweight and highly stowable. Outside earth's magnetic field, however, ionizing Radiation causes localized defect states that accumulate and ultimately cause the failure of electronic devices. This study, assesses the Radiation Hardness of the widely used triple cation based perovskite absorber material, namely Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 employing 20 and 68 MeV proton irRadiation. Therefore, in situ measurements of the degradation of the proton induced current as well as the photovoltaic performance during proton irRadiation are used as two independent metrics. Both measurements suggest that triple cation perovskites even exceed the Radiation Hardness of SiC, which is a material often proposed to possess an excellent Radiation Hardness. Our optimized Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 based space solar cells reach efficiencies of 18.8% under AM0 illumination and maintain 95% of their initial efficiency even after irRadiation with protons at an energy 68 MeV and a total dose of 1012 p per cm2. Degradation under 20 MeV proton irRadiation is even lower. Despite the negligible impact on solar cell device performance, this study identifies that proton irRadiation is changing the recombination kinetics under low excitation densities profoundly. Dark capacitance–voltage and current–voltage characteristics, photoluminescence spectra as well as photoluminescence and Voc decays are analyzed in depth. Surprisingly, two fold prolonged PL and Voc decay times are observed after proton irRadiation. Often, such prolongations are attributed to a reduced charge recombination. Our kinetic model, precisely describing the observed time evolution after photoexcitation, however, establishes the prolonged release of trapped minority charge carriers from proton-Radiation induced trap states.
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Radiation Hardness and self healing of perovskite solar cells
Advanced Materials, 2016Co-Authors: Felix Lang, N H Nickel, Jurgen Bundesmann, Sophie Seidel, Andrea Denker, Steve Albrecht, V V Brus, J Rappich, Bernd Rech, Giovanni LandiAbstract:The Radiation Hardness of CH3 NH3 PbI3 -based solar cells is evaluated from in situ measurements during high-energy proton irRadiation. These organic-inorganic perovskites exhibit Radiation Hardness and withstand proton doses that exceed the damage threshold of crystalline silicon by almost 3 orders of magnitude. Moreover, after termination of the proton irRadiation, a self-healing process of the solar cells commences.
Junseok Heo - One of the best experts on this subject based on the ideXlab platform.
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cdse zns quantum dot encapsulated mos 2 phototransistor for enhanced Radiation Hardness
Scientific Reports, 2019Co-Authors: Jinwu Park, Geonwook Yoo, Junseok HeoAbstract:Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its Radiation Hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irRadiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irRadiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve Radiation Hardness and thus to maintain the performance of the MoS2 phototransistor.
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CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced Radiation Hardness
Nature Publishing Group, 2019Co-Authors: Jinwu Park, Geonwook Yoo, Junseok HeoAbstract:Abstract Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its Radiation Hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irRadiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irRadiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve Radiation Hardness and thus to maintain the performance of the MoS2 phototransistor
Andrea Denker - One of the best experts on this subject based on the ideXlab platform.
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efficient minority carrier detrapping mediating the Radiation Hardness of triple cation perovskite solar cells under proton irRadiation
Energy and Environmental Science, 2019Co-Authors: Felix Lang, Jurgen Bundesmann, Andrea Denker, Steve Albrecht, Giovanni Landi, Marko Jost, Heinzchristoph Neitzert, J RappichAbstract:Highly efficient perovskite based solar cells have the potential to be a game-changing solar array technology for space applications that can be flexible, truly roll-able, ultra-lightweight and highly stowable. Outside earth's magnetic field, however, ionizing Radiation causes localized defect states that accumulate and ultimately cause the failure of electronic devices. This study, assesses the Radiation Hardness of the widely used triple cation based perovskite absorber material, namely Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 employing 20 and 68 MeV proton irRadiation. Therefore, in situ measurements of the degradation of the proton induced current as well as the photovoltaic performance during proton irRadiation are used as two independent metrics. Both measurements suggest that triple cation perovskites even exceed the Radiation Hardness of SiC, which is a material often proposed to possess an excellent Radiation Hardness. Our optimized Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 based space solar cells reach efficiencies of 18.8% under AM0 illumination and maintain 95% of their initial efficiency even after irRadiation with protons at an energy 68 MeV and a total dose of 1012 p per cm2. Degradation under 20 MeV proton irRadiation is even lower. Despite the negligible impact on solar cell device performance, this study identifies that proton irRadiation is changing the recombination kinetics under low excitation densities profoundly. Dark capacitance–voltage and current–voltage characteristics, photoluminescence spectra as well as photoluminescence and Voc decays are analyzed in depth. Surprisingly, two fold prolonged PL and Voc decay times are observed after proton irRadiation. Often, such prolongations are attributed to a reduced charge recombination. Our kinetic model, precisely describing the observed time evolution after photoexcitation, however, establishes the prolonged release of trapped minority charge carriers from proton-Radiation induced trap states.
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Radiation Hardness and self healing of perovskite solar cells
Advanced Materials, 2016Co-Authors: Felix Lang, N H Nickel, Jurgen Bundesmann, Sophie Seidel, Andrea Denker, Steve Albrecht, V V Brus, J Rappich, Bernd Rech, Giovanni LandiAbstract:The Radiation Hardness of CH3 NH3 PbI3 -based solar cells is evaluated from in situ measurements during high-energy proton irRadiation. These organic-inorganic perovskites exhibit Radiation Hardness and withstand proton doses that exceed the damage threshold of crystalline silicon by almost 3 orders of magnitude. Moreover, after termination of the proton irRadiation, a self-healing process of the solar cells commences.
Steve Albrecht - One of the best experts on this subject based on the ideXlab platform.
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efficient minority carrier detrapping mediating the Radiation Hardness of triple cation perovskite solar cells under proton irRadiation
Energy and Environmental Science, 2019Co-Authors: Felix Lang, Jurgen Bundesmann, Andrea Denker, Steve Albrecht, Giovanni Landi, Marko Jost, Heinzchristoph Neitzert, J RappichAbstract:Highly efficient perovskite based solar cells have the potential to be a game-changing solar array technology for space applications that can be flexible, truly roll-able, ultra-lightweight and highly stowable. Outside earth's magnetic field, however, ionizing Radiation causes localized defect states that accumulate and ultimately cause the failure of electronic devices. This study, assesses the Radiation Hardness of the widely used triple cation based perovskite absorber material, namely Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 employing 20 and 68 MeV proton irRadiation. Therefore, in situ measurements of the degradation of the proton induced current as well as the photovoltaic performance during proton irRadiation are used as two independent metrics. Both measurements suggest that triple cation perovskites even exceed the Radiation Hardness of SiC, which is a material often proposed to possess an excellent Radiation Hardness. Our optimized Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 based space solar cells reach efficiencies of 18.8% under AM0 illumination and maintain 95% of their initial efficiency even after irRadiation with protons at an energy 68 MeV and a total dose of 1012 p per cm2. Degradation under 20 MeV proton irRadiation is even lower. Despite the negligible impact on solar cell device performance, this study identifies that proton irRadiation is changing the recombination kinetics under low excitation densities profoundly. Dark capacitance–voltage and current–voltage characteristics, photoluminescence spectra as well as photoluminescence and Voc decays are analyzed in depth. Surprisingly, two fold prolonged PL and Voc decay times are observed after proton irRadiation. Often, such prolongations are attributed to a reduced charge recombination. Our kinetic model, precisely describing the observed time evolution after photoexcitation, however, establishes the prolonged release of trapped minority charge carriers from proton-Radiation induced trap states.
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Radiation Hardness and self healing of perovskite solar cells
Advanced Materials, 2016Co-Authors: Felix Lang, N H Nickel, Jurgen Bundesmann, Sophie Seidel, Andrea Denker, Steve Albrecht, V V Brus, J Rappich, Bernd Rech, Giovanni LandiAbstract:The Radiation Hardness of CH3 NH3 PbI3 -based solar cells is evaluated from in situ measurements during high-energy proton irRadiation. These organic-inorganic perovskites exhibit Radiation Hardness and withstand proton doses that exceed the damage threshold of crystalline silicon by almost 3 orders of magnitude. Moreover, after termination of the proton irRadiation, a self-healing process of the solar cells commences.
Giovanni Landi - One of the best experts on this subject based on the ideXlab platform.
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efficient minority carrier detrapping mediating the Radiation Hardness of triple cation perovskite solar cells under proton irRadiation
Energy and Environmental Science, 2019Co-Authors: Felix Lang, Jurgen Bundesmann, Andrea Denker, Steve Albrecht, Giovanni Landi, Marko Jost, Heinzchristoph Neitzert, J RappichAbstract:Highly efficient perovskite based solar cells have the potential to be a game-changing solar array technology for space applications that can be flexible, truly roll-able, ultra-lightweight and highly stowable. Outside earth's magnetic field, however, ionizing Radiation causes localized defect states that accumulate and ultimately cause the failure of electronic devices. This study, assesses the Radiation Hardness of the widely used triple cation based perovskite absorber material, namely Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 employing 20 and 68 MeV proton irRadiation. Therefore, in situ measurements of the degradation of the proton induced current as well as the photovoltaic performance during proton irRadiation are used as two independent metrics. Both measurements suggest that triple cation perovskites even exceed the Radiation Hardness of SiC, which is a material often proposed to possess an excellent Radiation Hardness. Our optimized Cs0.05MA0.17FA0.83Pb(I0.83Br0.17)3 based space solar cells reach efficiencies of 18.8% under AM0 illumination and maintain 95% of their initial efficiency even after irRadiation with protons at an energy 68 MeV and a total dose of 1012 p per cm2. Degradation under 20 MeV proton irRadiation is even lower. Despite the negligible impact on solar cell device performance, this study identifies that proton irRadiation is changing the recombination kinetics under low excitation densities profoundly. Dark capacitance–voltage and current–voltage characteristics, photoluminescence spectra as well as photoluminescence and Voc decays are analyzed in depth. Surprisingly, two fold prolonged PL and Voc decay times are observed after proton irRadiation. Often, such prolongations are attributed to a reduced charge recombination. Our kinetic model, precisely describing the observed time evolution after photoexcitation, however, establishes the prolonged release of trapped minority charge carriers from proton-Radiation induced trap states.
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Radiation Hardness and self healing of perovskite solar cells
Advanced Materials, 2016Co-Authors: Felix Lang, N H Nickel, Jurgen Bundesmann, Sophie Seidel, Andrea Denker, Steve Albrecht, V V Brus, J Rappich, Bernd Rech, Giovanni LandiAbstract:The Radiation Hardness of CH3 NH3 PbI3 -based solar cells is evaluated from in situ measurements during high-energy proton irRadiation. These organic-inorganic perovskites exhibit Radiation Hardness and withstand proton doses that exceed the damage threshold of crystalline silicon by almost 3 orders of magnitude. Moreover, after termination of the proton irRadiation, a self-healing process of the solar cells commences.
