The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Toyonobu Yoshida - One of the best experts on this subject based on the ideXlab platform.
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High-Rate Deposition of nanostructured SiC films by thermal plasma PVD
Science and Technology of Advanced Materials, 2002Co-Authors: X.h Wang, K Eguchi, Chihiro Iwamoto, Toyonobu YoshidaAbstract:With ultrafine SiC powder as starting material, thermal plasma physical vapor Deposition has been applied successfully to the Deposition of SiC films on Si substRates. The control of processing parameters such as substRate temperature, powder feeding Rate and composition of plasma gases, permits the Deposition of SiC films on a wide area of around 400 cm2 with a variety of microstructures from amorphous to nanostructured and with various morphologies from dense to columnar. For the nanostructured case, the crystallite size was between 3 and 15 nm and the maximum Deposition Rate calculated based on the actual Deposition duty time reached 200 nm/s. The Deposition mechanism is discussed briefly.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High-Rate Deposition of YBa2Cu3O7−x films by hot cluster epitaxy
Journal of Applied Physics, 1998Co-Authors: Yuzuru Takamura, Norio Yamaguchi, Kazuo Terashima, Toyonobu YoshidaAbstract:The growth Rate and crystallinity of YBa_2Cu_3O_ (YBCO) films were investigated in connection with the cluster size and the growth mode in order to clarify the high-Rate Deposition of high-quality epitaxial films from clusters in the plasma flash evaporation method. The films were deposited from clusters that were not acceleRated by bias voltage but were self-activated in a thermal plasma. With increasing cluster size, the growth Rate increased drastically at the point of the growth mode transition from spiral to two-dimensional cluster nucleus growth. After the transition, the film was still well epitaxial and have the minimum value of the full width at half maximum of the (005) x-ray rocking curve (FWHM_). A 1-μm-thick, nonspiral growth, monolayer smooth epitaxial YBCO film was successfully deposited at a growth Rate of 16 nm/s. FWHM_ for the films was less than 0.14°. It was revealed experimentally that the Deposition from "hot" clusters with large sticking probability onto a high-temperature substRate is highly effective for the Deposition of high-quality films at a high Rate
Kazuo Terashima - One of the best experts on this subject based on the ideXlab platform.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High-Rate Deposition of YBa2Cu3O7−x films by hot cluster epitaxy
Journal of Applied Physics, 1998Co-Authors: Yuzuru Takamura, Norio Yamaguchi, Kazuo Terashima, Toyonobu YoshidaAbstract:The growth Rate and crystallinity of YBa_2Cu_3O_ (YBCO) films were investigated in connection with the cluster size and the growth mode in order to clarify the high-Rate Deposition of high-quality epitaxial films from clusters in the plasma flash evaporation method. The films were deposited from clusters that were not acceleRated by bias voltage but were self-activated in a thermal plasma. With increasing cluster size, the growth Rate increased drastically at the point of the growth mode transition from spiral to two-dimensional cluster nucleus growth. After the transition, the film was still well epitaxial and have the minimum value of the full width at half maximum of the (005) x-ray rocking curve (FWHM_). A 1-μm-thick, nonspiral growth, monolayer smooth epitaxial YBCO film was successfully deposited at a growth Rate of 16 nm/s. FWHM_ for the films was less than 0.14°. It was revealed experimentally that the Deposition from "hot" clusters with large sticking probability onto a high-temperature substRate is highly effective for the Deposition of high-quality films at a high Rate
Yuzuru Takamura - One of the best experts on this subject based on the ideXlab platform.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High-Rate Deposition of YBa2Cu3O7−x films by hot cluster epitaxy
Journal of Applied Physics, 1998Co-Authors: Yuzuru Takamura, Norio Yamaguchi, Kazuo Terashima, Toyonobu YoshidaAbstract:The growth Rate and crystallinity of YBa_2Cu_3O_ (YBCO) films were investigated in connection with the cluster size and the growth mode in order to clarify the high-Rate Deposition of high-quality epitaxial films from clusters in the plasma flash evaporation method. The films were deposited from clusters that were not acceleRated by bias voltage but were self-activated in a thermal plasma. With increasing cluster size, the growth Rate increased drastically at the point of the growth mode transition from spiral to two-dimensional cluster nucleus growth. After the transition, the film was still well epitaxial and have the minimum value of the full width at half maximum of the (005) x-ray rocking curve (FWHM_). A 1-μm-thick, nonspiral growth, monolayer smooth epitaxial YBCO film was successfully deposited at a growth Rate of 16 nm/s. FWHM_ for the films was less than 0.14°. It was revealed experimentally that the Deposition from "hot" clusters with large sticking probability onto a high-temperature substRate is highly effective for the Deposition of high-quality films at a high Rate
Norio Yamaguchi - One of the best experts on this subject based on the ideXlab platform.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High-Rate Deposition of YBa2Cu3O7−x films by hot cluster epitaxy
Journal of Applied Physics, 1998Co-Authors: Yuzuru Takamura, Norio Yamaguchi, Kazuo Terashima, Toyonobu YoshidaAbstract:The growth Rate and crystallinity of YBa_2Cu_3O_ (YBCO) films were investigated in connection with the cluster size and the growth mode in order to clarify the high-Rate Deposition of high-quality epitaxial films from clusters in the plasma flash evaporation method. The films were deposited from clusters that were not acceleRated by bias voltage but were self-activated in a thermal plasma. With increasing cluster size, the growth Rate increased drastically at the point of the growth mode transition from spiral to two-dimensional cluster nucleus growth. After the transition, the film was still well epitaxial and have the minimum value of the full width at half maximum of the (005) x-ray rocking curve (FWHM_). A 1-μm-thick, nonspiral growth, monolayer smooth epitaxial YBCO film was successfully deposited at a growth Rate of 16 nm/s. FWHM_ for the films was less than 0.14°. It was revealed experimentally that the Deposition from "hot" clusters with large sticking probability onto a high-temperature substRate is highly effective for the Deposition of high-quality films at a high Rate
Tomoyuki Hattori - One of the best experts on this subject based on the ideXlab platform.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
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High Rate Deposition of thick epitaxial films by thermal plasma flash evaporation
Pure and Applied Chemistry, 1998Co-Authors: Kazuo Terashima, Norio Yamaguchi, Tomoyuki Hattori, Yuzuru Takamura, Toyonobu YoshidaAbstract:Various thermal plasma Deposition methods have been widely applied to high-Rate and large-area preparation of high-quality films with special structures ranging from nano-crystalline to epitaxial. The thermal plasma flash evaporation (TPFE) method is one of the most promising ones for epitaxial film preparation. In this paper, our recent progress of the process characterizations of TPFE and its application to high-Rate Deposition of thick epitaxial YBa2Cu307.x films are reviewed. Special emphasis is given to the role of nanometer-scale clusters geneRated in a boundary layer between a plasma and a substRate in epitaxial film Deposition.
