The Experts below are selected from a list of 16887 Experts worldwide ranked by ideXlab platform
Jinn-kong Sheu - One of the best experts on this subject based on the ideXlab platform.
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photodetectors formed by an indium tin oxide zinc oxide p type gallium nitride heterojunction with high ultraviolet to visible Rejection Ratio
Applied Physics Letters, 2009Co-Authors: M. L. Lee, Ping Feng Chi, Jinn-kong SheuAbstract:In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias Rejection Ratio can be improved up to 4×105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current Ratio and a responsivity of approximately 8×104 and 0.015 A/W, respectively.
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Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible Rejection Ratio
Applied Physics Letters, 2009Co-Authors: M. L. Lee, Ping Feng Chi, Jinn-kong SheuAbstract:In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias Rejection Ratio can be improved up to 4×105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current Ratio and a responsivity of approximately 8×104 and 0.015 A/W, respectively.
M. L. Lee - One of the best experts on this subject based on the ideXlab platform.
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photodetectors formed by an indium tin oxide zinc oxide p type gallium nitride heterojunction with high ultraviolet to visible Rejection Ratio
Applied Physics Letters, 2009Co-Authors: M. L. Lee, Ping Feng Chi, Jinn-kong SheuAbstract:In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias Rejection Ratio can be improved up to 4×105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current Ratio and a responsivity of approximately 8×104 and 0.015 A/W, respectively.
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Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible Rejection Ratio
Applied Physics Letters, 2009Co-Authors: M. L. Lee, Ping Feng Chi, Jinn-kong SheuAbstract:In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias Rejection Ratio can be improved up to 4×105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current Ratio and a responsivity of approximately 8×104 and 0.015 A/W, respectively.
Dezhen Shen - One of the best experts on this subject based on the ideXlab platform.
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improved ultraviolet visible Rejection Ratio using mgzno sio2 n si heterojunction photodetectors
Applied Surface Science, 2010Co-Authors: Dayong Jiang, Xiyan Zhang, Quansheng Liu, Zhaohui Bai, Xiaochun Wang, Nengli Wang, Dezhen ShenAbstract:Abstract We report on the fabrication and characterization of MgZnO/SiO 2 /n-Si structured photodetectors, for the visible–blind monitoring. The current–voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible Rejection Ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO 2 layer will be discussed in terms of the band diagrams of the heterojunctions.
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Improved ultraviolet/visible Rejection Ratio using MgZnO/SiO2/n-Si heterojunction photodetectors
Applied Surface Science, 2010Co-Authors: Dayong Jiang, Xiyan Zhang, Quansheng Liu, Zhaohui Bai, Xiaochun Wang, Wang Nengli, Dezhen ShenAbstract:Abstract We report on the fabrication and characterization of MgZnO/SiO 2 /n-Si structured photodetectors, for the visible–blind monitoring. The current–voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible Rejection Ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO 2 layer will be discussed in terms of the band diagrams of the heterojunctions.
Rongdun Hong - One of the best experts on this subject based on the ideXlab platform.
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TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio
IEEE Photonics Technology Letters, 2016Co-Authors: Zifeng Zhang, Rongdun Hong, Lai Mun Wong, Zhengyun Wu, Shijie Wang, Weifeng YangAbstract:We reported on metal-semiconductor-metal ultraviolet (UV) photodetector (PD) based on pulse-laser-deposited TiNbO2 alloy film. The TiNbO2 PD exhibited a low dark current density of ~0.46 nA/cm2, a high UV-to-visible Rejection Ratio of ~106, and a high responsivity of ~0.22 A/W under the illumination of 310-nm light (~1.86 mW/cm2). Interestingly, the TiNbO2 alloy PD presents a blue-shift cutoff wavelength of 350 nm due to quantum size effect and alloy characteristics, which would be promising for the further research in the UV detection.
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nanoscale avalanche photodiode with self quenching and ultrahigh ultraviolet visible Rejection Ratio
Optics Letters, 2012Co-Authors: Rongdun Hong, Yi Zhou, Yannan Xie, Xiaping Chen, Zifeng Zhang, Kang L. WangAbstract:A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible Rejection Ratio have been realized in this structure.
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Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible Rejection Ratio
Optics letters, 2012Co-Authors: Rongdun Hong, Yi Zhou, Yannan Xie, Xiaping Chen, Zifeng Zhang, Kang L. WangAbstract:A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible Rejection Ratio have been realized in this structure.
Zifeng Zhang - One of the best experts on this subject based on the ideXlab platform.
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TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio
IEEE Photonics Technology Letters, 2016Co-Authors: Zifeng Zhang, Rongdun Hong, Lai Mun Wong, Zhengyun Wu, Shijie Wang, Weifeng YangAbstract:We reported on metal-semiconductor-metal ultraviolet (UV) photodetector (PD) based on pulse-laser-deposited TiNbO2 alloy film. The TiNbO2 PD exhibited a low dark current density of ~0.46 nA/cm2, a high UV-to-visible Rejection Ratio of ~106, and a high responsivity of ~0.22 A/W under the illumination of 310-nm light (~1.86 mW/cm2). Interestingly, the TiNbO2 alloy PD presents a blue-shift cutoff wavelength of 350 nm due to quantum size effect and alloy characteristics, which would be promising for the further research in the UV detection.
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nanoscale avalanche photodiode with self quenching and ultrahigh ultraviolet visible Rejection Ratio
Optics Letters, 2012Co-Authors: Rongdun Hong, Yi Zhou, Yannan Xie, Xiaping Chen, Zifeng Zhang, Kang L. WangAbstract:A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible Rejection Ratio have been realized in this structure.
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Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible Rejection Ratio
Optics letters, 2012Co-Authors: Rongdun Hong, Yi Zhou, Yannan Xie, Xiaping Chen, Zifeng Zhang, Kang L. WangAbstract:A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible Rejection Ratio have been realized in this structure.
