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Bumned Soodchomshom - One of the best experts on this subject based on the ideXlab platform.

  • tunneling conductance on surface of topological insulator ferromagnet insulator s or d wave superconductor junction effect of magnetically induced Relativistic Mass
    Physica E-low-dimensional Systems & Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

  • Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced Relativistic Mass
    Physica E: Low-dimensional Systems and Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

Assanai Suwanvarangkoon - One of the best experts on this subject based on the ideXlab platform.

  • tunneling conductance on surface of topological insulator ferromagnet insulator s or d wave superconductor junction effect of magnetically induced Relativistic Mass
    Physica E-low-dimensional Systems & Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

  • Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced Relativistic Mass
    Physica E: Low-dimensional Systems and Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

I M Tang - One of the best experts on this subject based on the ideXlab platform.

  • tunneling conductance on surface of topological insulator ferromagnet insulator s or d wave superconductor junction effect of magnetically induced Relativistic Mass
    Physica E-low-dimensional Systems & Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

  • Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced Relativistic Mass
    Physica E: Low-dimensional Systems and Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

Rassmidara Hoonsawat - One of the best experts on this subject based on the ideXlab platform.

  • tunneling conductance on surface of topological insulator ferromagnet insulator s or d wave superconductor junction effect of magnetically induced Relativistic Mass
    Physica E-low-dimensional Systems & Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

  • Tunneling conductance on surface of topological insulator ferromagnet/insulator/(s- or d-wave) superconductor junction: Effect of magnetically-induced Relativistic Mass
    Physica E: Low-dimensional Systems and Nanostructures, 2011
    Co-Authors: Assanai Suwanvarangkoon, I M Tang, Rassmidara Hoonsawat, Bumned Soodchomshom
    Abstract:

    Abstract We investigate the tunneling conductance on the surface of topological insulator ferromagnet (F)/insulator (I)/superconductor (S) junction where superconducting type is either s- or d-wave paring. Topological insulators (TI) are insulating in bulk but conducting on the surface with the Dirac-fermion-like carriers. In contrast to the Dirac fermions in graphene, Relativistic Mass of the Dirac fermions in TI can be easily caused by applying magnetic field perpendicular to its surface. In this work, we emphatically focus on the effect of the magnetically-induced Relativistic Mass on the tunneling conductance of a TI-based F/I/S junction. We find that, due to the effect of spinless fermions as carriers in TI, the behavior of the tunneling conductance in a TI-based NIS junction resembles that in a nonmagnetic graphene-based NIS junction. In case of the d-wave paring F/I/S junction, increasing magnetically-induced Relativistic Mass changes the zero bias conductance dip (peak) to a zero bias conductance peak (dip). This behavior cannot be observed in a graphene-based F/I/S junction.

Mojmir Sob - One of the best experts on this subject based on the ideXlab platform.

  • why is polonium simple cubic and so highly anisotropic
    Physical Review Letters, 2007
    Co-Authors: Dominik Legut, Martin Friak, Mojmir Sob
    Abstract:

    Using the state-of-the-art ab initio electronic structure calculations, we explain why $\alpha$-Po prefers the simple cubic (s.c.) structure (it is due to the Relativistic Mass-velocity and Darwin terms), elucidate its extreme elastic anisotropy (this is an intrinsic property of the s.c. crystal structure) and predict a transformation to a mixture of two trigonal structures at pressures of 1-3 GPa.