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John Kouvetakis - One of the best experts on this subject based on the ideXlab platform.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
Julio Teixeira - One of the best experts on this subject based on the ideXlab platform.
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relation between changes in neural Responsivity and reductions in desire to eat high calorie foods following gastric bypass surgery
Neuroscience, 2012Co-Authors: Christopher N. Ochner, Elizabeth Hutchins, Eric Stice, Allan Geliebter, Joy Hirsch, Ladan Afifi, Julio TeixeiraAbstract:Reductions in reward-related (e.g. striatal) neural activation have been noted following obesity surgery. It has been speculated that these postoperative neural changes may be related to documented postoperative changes in food preferences; however, this relation has not been previously established. In this study, functional magnetic resonance imaging and rating scales were used to assess neural Responsivity, desire to eat (i.e. wanting), and liking for high- and low-calorie food cues in 14 females one month pre- and one month post-Roux-en-Y gastric bypass (RYGB) surgery. Pre- to post-RYGB changes in all variables were assessed, and postoperative changes in neural Responsivity were regressed on postoperative changes in desire to eat and liking of foods. Results revealed significant postoperative reductions in mesolimbic (e.g. striatal) neural Responsivity, desire to eat (wanting), and liking for high- relative to low-calorie food cues. Postoperative reductions in mesolimbic Responsivity were associated with postoperative reductions in wanting, but not liking, for high- versus low-calorie foods. Interestingly, reductions in food wanting were also related to reductions in inhibitory (e.g. dorsolateral prefrontal cortex) activation following RYGB. Results are consistent with the hypothesized delineation between wanting and liking, supporting the notion that wanting, but not liking, is processed through the dopaminergic reward pathway. Concurrent reductions in both reward-related and inhibitory activation-predicted reductions in desire to eat might suggest that less dietary inhibition was elicited to resist potential overconsumption as the anticipated reward value of high-calorie foods decreased following RYGB.
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Relation between changes in neural Responsivity and reductions in desire to eat high-calorie foods following gastric bypass surgery.
Neuroscience, 2012Co-Authors: Christopher N. Ochner, Elizabeth Hutchins, Eric Stice, Allan Geliebter, Joy Hirsch, Ladan Afifi, Julio TeixeiraAbstract:Reductions in reward-related (e.g., striatal) neural activation have been noted following obesity surgery. It has been speculated that these postoperative neural changes may be related to documented postoperative changes in food preferences; however, this relation has not been previously established. In this study, functional magnetic resonance imaging and rating scales were used to assess neural Responsivity, desire to eat (i.e., wanting) and liking for high- and low- calorie food cues in 14 females 1 mo pre and 1 mo post Roux-en-Y gastric bypass (RYGB) surgery. Pre to post RYGB changes in all variables were assessed, and postoperative changes in neural Responsivity were regressed on postoperative changes in desire to eat and liking of foods. Results revealed significant postoperative reductions in mesolimbic (e.g., striatal) neural Responsivity, desire to eat (wanting) and liking for high- relative to low- calorie food cues. Postoperative reductions in mesolimbic Responsivity were associated with postoperative reductions in wanting, but not liking, for high- vs. low- calorie foods. Interestingly, reductions in food wanting were also related to reductions in inhibitory (e.g., dorsolateral prefrontal cortex) activation following RYGB. Results are consistent with the hypothesized delineation between wanting and liking, supporting the notion that that wanting, but not liking, is processed through the dopaminergic reward pathway. Concurrent reductions in both reward-related and inhibitory activation predicted reductions in desire to eat might suggest that less dietary inhibition was elicited to resist potential overconsumption as the anticipated reward value of high-calorie foods decreased following RYGB.
Radek Roucka - One of the best experts on this subject based on the ideXlab platform.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
Allan Geliebter - One of the best experts on this subject based on the ideXlab platform.
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relation between changes in neural Responsivity and reductions in desire to eat high calorie foods following gastric bypass surgery
Neuroscience, 2012Co-Authors: Christopher N. Ochner, Elizabeth Hutchins, Eric Stice, Allan Geliebter, Joy Hirsch, Ladan Afifi, Julio TeixeiraAbstract:Reductions in reward-related (e.g. striatal) neural activation have been noted following obesity surgery. It has been speculated that these postoperative neural changes may be related to documented postoperative changes in food preferences; however, this relation has not been previously established. In this study, functional magnetic resonance imaging and rating scales were used to assess neural Responsivity, desire to eat (i.e. wanting), and liking for high- and low-calorie food cues in 14 females one month pre- and one month post-Roux-en-Y gastric bypass (RYGB) surgery. Pre- to post-RYGB changes in all variables were assessed, and postoperative changes in neural Responsivity were regressed on postoperative changes in desire to eat and liking of foods. Results revealed significant postoperative reductions in mesolimbic (e.g. striatal) neural Responsivity, desire to eat (wanting), and liking for high- relative to low-calorie food cues. Postoperative reductions in mesolimbic Responsivity were associated with postoperative reductions in wanting, but not liking, for high- versus low-calorie foods. Interestingly, reductions in food wanting were also related to reductions in inhibitory (e.g. dorsolateral prefrontal cortex) activation following RYGB. Results are consistent with the hypothesized delineation between wanting and liking, supporting the notion that wanting, but not liking, is processed through the dopaminergic reward pathway. Concurrent reductions in both reward-related and inhibitory activation-predicted reductions in desire to eat might suggest that less dietary inhibition was elicited to resist potential overconsumption as the anticipated reward value of high-calorie foods decreased following RYGB.
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Relation between changes in neural Responsivity and reductions in desire to eat high-calorie foods following gastric bypass surgery.
Neuroscience, 2012Co-Authors: Christopher N. Ochner, Elizabeth Hutchins, Eric Stice, Allan Geliebter, Joy Hirsch, Ladan Afifi, Julio TeixeiraAbstract:Reductions in reward-related (e.g., striatal) neural activation have been noted following obesity surgery. It has been speculated that these postoperative neural changes may be related to documented postoperative changes in food preferences; however, this relation has not been previously established. In this study, functional magnetic resonance imaging and rating scales were used to assess neural Responsivity, desire to eat (i.e., wanting) and liking for high- and low- calorie food cues in 14 females 1 mo pre and 1 mo post Roux-en-Y gastric bypass (RYGB) surgery. Pre to post RYGB changes in all variables were assessed, and postoperative changes in neural Responsivity were regressed on postoperative changes in desire to eat and liking of foods. Results revealed significant postoperative reductions in mesolimbic (e.g., striatal) neural Responsivity, desire to eat (wanting) and liking for high- relative to low- calorie food cues. Postoperative reductions in mesolimbic Responsivity were associated with postoperative reductions in wanting, but not liking, for high- vs. low- calorie foods. Interestingly, reductions in food wanting were also related to reductions in inhibitory (e.g., dorsolateral prefrontal cortex) activation following RYGB. Results are consistent with the hypothesized delineation between wanting and liking, supporting the notion that that wanting, but not liking, is processed through the dopaminergic reward pathway. Concurrent reductions in both reward-related and inhibitory activation predicted reductions in desire to eat might suggest that less dietary inhibition was elicited to resist potential overconsumption as the anticipated reward value of high-calorie foods decreased following RYGB.
Y K Yeo - One of the best experts on this subject based on the ideXlab platform.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
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complementary metal oxide semiconductor compatible detector materials with enhanced 1550 nm Responsivity via sn doping of ge si 100
Journal of Applied Physics, 2011Co-Authors: Radek Roucka, Richard T Beeler, Jay Mathews, Meeyi Ryu, Y K Yeo, Jose Menendez, John KouvetakisAbstract:Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the Responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same Responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the Responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.
