The Experts below are selected from a list of 21135 Experts worldwide ranked by ideXlab platform
Jaroslaw Rutkowski - One of the best experts on this subject based on the ideXlab platform.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
Optical and Quantum Electronics, 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ~ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 10^8 Jones assuming immersion.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ∼ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance < 20 Ω related to the processing allows to reach response time within the range ∼ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ∼ 108 Jones.
Piotr Martyniuk - One of the best experts on this subject based on the ideXlab platform.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
Optical and Quantum Electronics, 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ~ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 10^8 Jones assuming immersion.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ∼ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance < 20 Ω related to the processing allows to reach response time within the range ∼ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ∼ 108 Jones.
Paweł Madejczyk - One of the best experts on this subject based on the ideXlab platform.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
Optical and Quantum Electronics, 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ~ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 10^8 Jones assuming immersion.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ∼ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance < 20 Ω related to the processing allows to reach response time within the range ∼ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ∼ 108 Jones.
Waldemar Gawron - One of the best experts on this subject based on the ideXlab platform.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
Optical and Quantum Electronics, 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ~ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 10^8 Jones assuming immersion.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ∼ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance < 20 Ω related to the processing allows to reach response time within the range ∼ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ∼ 108 Jones.
Małgorzata Kopytko - One of the best experts on this subject based on the ideXlab platform.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
Optical and Quantum Electronics, 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ~ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 10^8 Jones assuming immersion.
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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage Condition
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2017Co-Authors: Piotr Martyniuk, Paweł Madejczyk, Małgorzata Kopytko, Waldemar Gawron, Jaroslaw RutkowskiAbstract:The paper reports on the long-wave infrared HgCdTe detector for short response time operating for unbiased and Room Temperature Condition. The response time was calculated at the level of ∼ 220–520 ps for zero bias Condition. It was shown that depending on architecture extra series resistance < 20 Ω related to the processing allows to reach response time within the range ∼ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ∼ 108 Jones.
