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J Kubler - One of the best experts on this subject based on the ideXlab platform.

  • realization of spin gapless Semiconductors the heusler compound mn2coal
    Physical Review Letters, 2013
    Co-Authors: Siham Ouardi, Gerhard H Fecher, Claudia Felser, J Kubler
    Abstract:

    : Recent studies have reported an interesting class of Semiconductor materials that bridge the gap between Semiconductors and half-metallic ferromagnets. These materials, called spin gapless Semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic Semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature Semiconductor spintronics, the robust spin polarization of the spin gapless Semiconductors makes it very promising material for spintronics in general.

N. G. Kolin - One of the best experts on this subject based on the ideXlab platform.

  • a model for fermi level pinning in Semiconductors radiation defects interface boundaries
    Physica B-condensed Matter, 2004
    Co-Authors: V. N. Brudnyi, S. N. Grinyaev, N. G. Kolin
    Abstract:

    Abstract This paper reports the new theoretical model of a defective state with the most localized wave function, which corresponds to the deepest energy level E B within the energetic interval near the forbidden gap of each Semiconductor. A special characteristic of this localized state is established in the phenomenon of the Fermi-level pinning in Semiconductors. This deepest energy level plays the fundamental role similar to the electronic chemical potential in the bulk defective Semiconductor and at the interface. The numerical calculations of E B -values in the IV and III–V group Semiconductors are in conformity with experimental data on the Fermi-level position in the irradiated Semiconductors and at the interface boundaries. The present model explains the correlation between different approaches to the problem of the Fermi-level pinning in Semiconductors based on the one-particle Green function properties.

  • The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification)
    Russian Physics Journal, 2003
    Co-Authors: V. N. Brudnyi, S. N. Grinyaev, N. G. Kolin
    Abstract:

    The original results are presented, and the current status of the Fermi level pinning in Semiconductors is reviewed for different physical phenomena (interphase boundaries, Semiconductor clusters, and radiation modification of Semiconductors).

Siham Ouardi - One of the best experts on this subject based on the ideXlab platform.

  • realization of spin gapless Semiconductors the heusler compound mn2coal
    Physical Review Letters, 2013
    Co-Authors: Siham Ouardi, Gerhard H Fecher, Claudia Felser, J Kubler
    Abstract:

    : Recent studies have reported an interesting class of Semiconductor materials that bridge the gap between Semiconductors and half-metallic ferromagnets. These materials, called spin gapless Semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic Semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature Semiconductor spintronics, the robust spin polarization of the spin gapless Semiconductors makes it very promising material for spintronics in general.

V. N. Brudnyi - One of the best experts on this subject based on the ideXlab platform.

  • a model for fermi level pinning in Semiconductors radiation defects interface boundaries
    Physica B-condensed Matter, 2004
    Co-Authors: V. N. Brudnyi, S. N. Grinyaev, N. G. Kolin
    Abstract:

    Abstract This paper reports the new theoretical model of a defective state with the most localized wave function, which corresponds to the deepest energy level E B within the energetic interval near the forbidden gap of each Semiconductor. A special characteristic of this localized state is established in the phenomenon of the Fermi-level pinning in Semiconductors. This deepest energy level plays the fundamental role similar to the electronic chemical potential in the bulk defective Semiconductor and at the interface. The numerical calculations of E B -values in the IV and III–V group Semiconductors are in conformity with experimental data on the Fermi-level position in the irradiated Semiconductors and at the interface boundaries. The present model explains the correlation between different approaches to the problem of the Fermi-level pinning in Semiconductors based on the one-particle Green function properties.

  • The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification)
    Russian Physics Journal, 2003
    Co-Authors: V. N. Brudnyi, S. N. Grinyaev, N. G. Kolin
    Abstract:

    The original results are presented, and the current status of the Fermi level pinning in Semiconductors is reviewed for different physical phenomena (interphase boundaries, Semiconductor clusters, and radiation modification of Semiconductors).

Claudia Felser - One of the best experts on this subject based on the ideXlab platform.

  • realization of spin gapless Semiconductors the heusler compound mn2coal
    Physical Review Letters, 2013
    Co-Authors: Siham Ouardi, Gerhard H Fecher, Claudia Felser, J Kubler
    Abstract:

    : Recent studies have reported an interesting class of Semiconductor materials that bridge the gap between Semiconductors and half-metallic ferromagnets. These materials, called spin gapless Semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic Semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature Semiconductor spintronics, the robust spin polarization of the spin gapless Semiconductors makes it very promising material for spintronics in general.