The Experts below are selected from a list of 3330 Experts worldwide ranked by ideXlab platform
P.F. Sciortino - One of the best experts on this subject based on the ideXlab platform.
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator
Generation Amplification and Measurement of Ultrashort Laser Pulses, 1994Co-Authors: Y.-k. Chen, P.F. Sciortino, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, Gregory Raybon, Nan M. Froberg, Anthony M. JohnsonAbstract:We report on the generation of Short Optical Pulses by utilizing the non-linear absorption characteristics of a multiple quantum well (MQW) electro-absorption modulator, which is monolithically integrated with a MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Optical Pulses as Short as 39 ps and 15 ps have been generated at a repetition rate of 3 GHz and 10 GHz, respectively, with a broad tuning range of 5.4 nm near 1554 nm lasing wavelength.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:Summary form only given. The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE). >
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IIIB-6 Short Optical Pulse Generated by Integrated MQW DBR Laser/EA-Modulator Fabricated by Selective-Area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:Summary form only given. The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE)
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE).
Salvador Balle - One of the best experts on this subject based on the ideXlab platform.
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Characterization of Gain-Switched Pulses From 1.55-$\mu$m VCSEL
IEEE Photonics Technology Letters, 2010Co-Authors: Antonio Consoli, I. Esquivias, F. Lopez J. Hernandez, J. Mulet, Salvador BalleAbstract:We report on Short Optical Pulse generation by gain-switching (GS) a low-cost commercial vertical-cavity surface-emitting laser emitting at 1.55 μm. The dependence of Pulse characteristics on GS parameters is investigated and analyzed. Pulses with duration of 55 ps and time-bandwidth product between 0.91 and 2.2 are obtained at repetition rates between 1 and 3 GHz.
Naoya Wada - One of the best experts on this subject based on the ideXlab platform.
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spectral phase encoding of ultra Short Optical Pulse in time domain for ocdma application
Optics Express, 2007Co-Authors: Xu Wang, Naoya WadaAbstract:We propose a novel reconfigurable time domain spectral phase encoding (SPE) scheme for coherent Optical code-division-multiple-access application. In the proposed scheme, the ultra-Short Optical Pulse is stretched by dispersive device and the SPE is done in time domain using high speed phase modulator. The time domain SPE scheme is robust to wavelength drift of the light source and is very flexible and compatible with the fiber Optical system. Proof-of-principle experiments of encoding with 16-chip, 20 GHz/chip binary-phase-shift-keying codes and 1.25 Gbps data transmission have been successfully demonstrated together with an arrayed-wave-guide decoder.
Jinlong Yu - One of the best experts on this subject based on the ideXlab platform.
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A Novel Highly Stable Dual-Wavelength Short Optical Pulse Source Based on a Dual-Loop Optoelectronic Oscillator With Two Wavelengths
IEEE Photonics Journal, 2015Co-Authors: Jinlong Yu, Zixiong Wang, Ju Wang, Wenrui Wang, Bin Chen, Yang YuAbstract:A novel scheme of a highly stable dual-wavelength Short Optical Pulse source (SOPS) based on a dual-loop optoelectronic oscillator (OEO) with two wavelengths is demonstrated. The structure of the dual-loop OEO with two wavelengths can suppress the random beating noise effectively and generate the microwave signal with low phase noise (-122.4 dBc/Hz at 10 kHz) . It consists of two directly modulated lasers and a phase modulator (PM) . The light that is directly modulated by the large signal generated from the OEO is injected into the PM to achieve remarkable chirp. Then, by optimizing the length of the dispersion compensating fiber, the Optical Pulses are further compressed. In the experiment, the SOPS with dual wavelengths is generated simultaneously. The repetition rate, Pulse width, and timing jitter of the SOPS are 10 GHz, 2.9 ps, and 12.5 fs, respectively. In particular, the loop drift of the OEO is effectively compensated by fiber stretchers using phase-locked-loop technology. The frequency drift of the microwave signal is less than ±73.3 mHz for a long-term measurement with a duration of 1 h. Therefore, the long-term stability of SOPS is guaranteed.
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The Improvement of Fiber Parametric Amplifier Pulse Source via Phase Modulation of Pump Light
2011 International Conference on Control Automation and Systems Engineering (CASE), 2011Co-Authors: Xiaoyuan Zhang, Jinlong YuAbstract:A novel scheme on the improvement in Short Pulse generation is studied based on phase modulator and fiber Optical parametric amplifier (FOPA). The continuous-wave (CW) pump light was first sinusoidally intensity modulated, and then modulated by an electro-optic phase modulator in which the nonlinear chirp and undesirable negative chirp components were sufficiently restrained. The modulated light was compressed into Shorter Pulse by a dispersion media. It was confirmed by the experiment that 12.7-ps Short Optical Pulse with high extinction ratio can be generated in this way.
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phase modulator based optoelectronic oscillator for generating Short Optical Pulse and microwave signal
Optical Engineering, 2007Co-Authors: Yang Jiang, Jinlong Yu, Wenrui Wang, Hao Hu, Yaotian Wang, Enze YangAbstract:A phase-modulator-based optoelectronic oscillator (OEO) is utilized to implement a self-starting Optical Pulse and microwave signal source. This system is able to simultaneously generate a 9.8-GHz Optical Pulse stream with 141-fs (over 100 Hz to 1 MHz) timing jitter and 6.5-ps Pulse width, along with a high spectral purity electrical signal that is locked to the repetition rate of the Optical Pulses. The measured phase noise is −112 dBc/Hz at 10 kHz away from carrier, and the side modes are perfectly suppressed.
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20 GHz ultra-Short Optical Pulse source generated by DFB-LD and Pulse compression technology
Canadian Conference on Electrical and Computer Engineering 2001. Conference Proceedings (Cat. No.01TH8555), 2001Co-Authors: Jinlong Yu, Enze YangAbstract:This paper studies that generation of 20 GHz ultra-Short Optical Pulse series by 10 GHz DFB-LD with OTDM and Pulse compression technology. A novel three-stage compression technology is brought forward, including compensation in normal dispersion fiber, compressing in anomalous dispersion fiber followed normal dispersion fiber and in comb-like dispersion profile fiber (CDPF). In the experiment, the compressed Pulse of 3.3 ps Pulse width was obtained and the total compress factor is 7.6. This technique is important for implementing an 80 Gb/s OTDM system.
Y.-k. Chen - One of the best experts on this subject based on the ideXlab platform.
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator
Generation Amplification and Measurement of Ultrashort Laser Pulses, 1994Co-Authors: Y.-k. Chen, P.F. Sciortino, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, Gregory Raybon, Nan M. Froberg, Anthony M. JohnsonAbstract:We report on the generation of Short Optical Pulses by utilizing the non-linear absorption characteristics of a multiple quantum well (MQW) electro-absorption modulator, which is monolithically integrated with a MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Optical Pulses as Short as 39 ps and 15 ps have been generated at a repetition rate of 3 GHz and 10 GHz, respectively, with a broad tuning range of 5.4 nm near 1554 nm lasing wavelength.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator
Proceedings of SPIE, 1994Co-Authors: Y.-k. Chen, Tawee Tanbun-ek, R.a. LoganAbstract:Summary form only given. The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE)
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:Summary form only given. The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE). >
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IIIB-6 Short Optical Pulse Generated by Integrated MQW DBR Laser/EA-Modulator Fabricated by Selective-Area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:Summary form only given. The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE)
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Short Optical Pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE
IEEE Transactions on Electron Devices, 1993Co-Authors: Y.-k. Chen, Andrea Tate, K. W. Wecht, R.a. Logan, Arthur Mike Sergent, Tawee Tanbun-ek, P.F. SciortinoAbstract:The authors report on the generation of Short Optical Pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that Optical Pulses as Short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE).