The Experts below are selected from a list of 48873 Experts worldwide ranked by ideXlab platform
W Scandale - One of the best experts on this subject based on the ideXlab platform.
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Angular asymmetry of the nuclear interaction probability of high energy particles in short bent Crystals
Eur.Phys.J.C, 2020Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, L.s. Esposito, A. Natochii, R. Rossi, G.i. Smirnov, V. Zhovkovska, F. GalluccioAbstract:The rate of inelastic nuclear interactions in a short bent Silicon Crystal was precisely measured for the first time using a 180 GeV/c positive hadron beam produced in the North Experimental Area of the CERN SPS. An angular asymmetry dependence on the Crystal orientation in the vicinity of the planar channeling minimum has been observed. For the inspected Crystal, this probability is about $\sim 20\%$ larger than in the amorphous case because of the atomic density increase along the particle trajectories in the angular range of volume reflection, whose dimension is determined by the Crystal bending angle. Instead, for the opposite angular orientation with respect to the planar channeling, there is a smaller probability excess of $\sim 4\%$.
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high efficiency deflection of high energy protons due to channeling along the 110 axis of a bent Silicon Crystal
Physics Letters B, 2016Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, A Lechner, A Masi, D MirarchiAbstract:Abstract A deflection efficiency of about 61 % was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent Silicon Crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10 % of its amorphous level whereas in channeling along the (110) planes it is about 25 % . High efficiency deflection and small beam losses make this axial orientation of a Silicon Crystal a useful tool for the beam steering of high energy charged particles.
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observation of nuclear dechanneling length reduction for high energy protons in a short bent Crystal
Physics Letters B, 2015Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, L Lari, A LechnerAbstract:Abstract Deflection of 400 GeV/ c protons by a short bent Silicon Crystal was studied at the CERN SPS. It was shown that the dechanneling probability increases while the dechanneling length decreases with an increase of incident angles of particles relative to the Crystal planes. The observation of the dechanneling length reduction provides evidence of the particle population increase at the top levels of transverse energies in the potential well of the planar channels.
A Lechner - One of the best experts on this subject based on the ideXlab platform.
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high efficiency deflection of high energy protons due to channeling along the 110 axis of a bent Silicon Crystal
Physics Letters B, 2016Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, A Lechner, A Masi, D MirarchiAbstract:Abstract A deflection efficiency of about 61 % was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent Silicon Crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10 % of its amorphous level whereas in channeling along the (110) planes it is about 25 % . High efficiency deflection and small beam losses make this axial orientation of a Silicon Crystal a useful tool for the beam steering of high energy charged particles.
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observation of nuclear dechanneling length reduction for high energy protons in a short bent Crystal
Physics Letters B, 2015Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, L Lari, A LechnerAbstract:Abstract Deflection of 400 GeV/ c protons by a short bent Silicon Crystal was studied at the CERN SPS. It was shown that the dechanneling probability increases while the dechanneling length decreases with an increase of incident angles of particles relative to the Crystal planes. The observation of the dechanneling length reduction provides evidence of the particle population increase at the top levels of transverse energies in the potential well of the planar channels.
W Wijaranakula - One of the best experts on this subject based on the ideXlab platform.
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numerical simulation of point defect distributions in a growing czochralski Silicon Crystal in response to an abrupt change in the growth conditions
MRS Proceedings, 1995Co-Authors: W Wijaranakula, Q S Zhang, K Takano, H YamagishiAbstract:Numerical simulation of point defect distributions in a growing Czochralski Silicon Crystal with an abrupt change in the Crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a Crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during Crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the Silicon interstitials and the flow pattern defects and thus the Crystal growth rate.
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a real time simulation of point defect reactions near the solid and melt interface of a 200 mm diameter czochralski Silicon Crystal
Journal of The Electrochemical Society, 1993Co-Authors: W WijaranakulaAbstract:A real-time simulation of the point-defect reactions near the solid and melt interface of a 200 mm diam Czochralski Silicon Crystal was performed. The results from the thermal stress calculation accounting for the temperature dependence of the elastic modulus of Silicon indicate that the thermal stresses in the vicinity near the solid and melt interface are far above the Silicon yield strength. Therefore, it is suggested that the effect of thermal stresses on the point defect reactions in a growing Crystal is negligible. In this work, the Crystal cooling conditions are found to have a significant impact on the point defect reactions
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numerical modeling of the point defect aggregation during the czochralski Silicon Crystal growth
Journal of The Electrochemical Society, 1992Co-Authors: W WijaranakulaAbstract:A real-time simulation using the numerical method was performed in order to study the aggregation process of the intrinsic point defects during the Czochralski Crystal growth. It was found that the point defect aggregation is predominated by the recombination process between Silicon interstitials and vacancies. In contrast, the contribution of the long-range diffusion of point defects is found to be negligible. In Silicon saturated with interstitial oxygen the formation of vacancy-oxygen pairs leads to Silicon interstitial saturation, which in turn gives rise to a formation of interstitial-type defects
F Cerutti - One of the best experts on this subject based on the ideXlab platform.
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Angular asymmetry of the nuclear interaction probability of high energy particles in short bent Crystals
Eur.Phys.J.C, 2020Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, L.s. Esposito, A. Natochii, R. Rossi, G.i. Smirnov, V. Zhovkovska, F. GalluccioAbstract:The rate of inelastic nuclear interactions in a short bent Silicon Crystal was precisely measured for the first time using a 180 GeV/c positive hadron beam produced in the North Experimental Area of the CERN SPS. An angular asymmetry dependence on the Crystal orientation in the vicinity of the planar channeling minimum has been observed. For the inspected Crystal, this probability is about $\sim 20\%$ larger than in the amorphous case because of the atomic density increase along the particle trajectories in the angular range of volume reflection, whose dimension is determined by the Crystal bending angle. Instead, for the opposite angular orientation with respect to the planar channeling, there is a smaller probability excess of $\sim 4\%$.
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high efficiency deflection of high energy protons due to channeling along the 110 axis of a bent Silicon Crystal
Physics Letters B, 2016Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, A Lechner, A Masi, D MirarchiAbstract:Abstract A deflection efficiency of about 61 % was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent Silicon Crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10 % of its amorphous level whereas in channeling along the (110) planes it is about 25 % . High efficiency deflection and small beam losses make this axial orientation of a Silicon Crystal a useful tool for the beam steering of high energy charged particles.
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observation of nuclear dechanneling length reduction for high energy protons in a short bent Crystal
Physics Letters B, 2015Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, L Lari, A LechnerAbstract:Abstract Deflection of 400 GeV/ c protons by a short bent Silicon Crystal was studied at the CERN SPS. It was shown that the dechanneling probability increases while the dechanneling length decreases with an increase of incident angles of particles relative to the Crystal planes. The observation of the dechanneling length reduction provides evidence of the particle population increase at the top levels of transverse energies in the potential well of the planar channels.
M Garattini - One of the best experts on this subject based on the ideXlab platform.
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Angular asymmetry of the nuclear interaction probability of high energy particles in short bent Crystals
Eur.Phys.J.C, 2020Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, L.s. Esposito, A. Natochii, R. Rossi, G.i. Smirnov, V. Zhovkovska, F. GalluccioAbstract:The rate of inelastic nuclear interactions in a short bent Silicon Crystal was precisely measured for the first time using a 180 GeV/c positive hadron beam produced in the North Experimental Area of the CERN SPS. An angular asymmetry dependence on the Crystal orientation in the vicinity of the planar channeling minimum has been observed. For the inspected Crystal, this probability is about $\sim 20\%$ larger than in the amorphous case because of the atomic density increase along the particle trajectories in the angular range of volume reflection, whose dimension is determined by the Crystal bending angle. Instead, for the opposite angular orientation with respect to the planar channeling, there is a smaller probability excess of $\sim 4\%$.
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high efficiency deflection of high energy protons due to channeling along the 110 axis of a bent Silicon Crystal
Physics Letters B, 2016Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, A Lechner, A Masi, D MirarchiAbstract:Abstract A deflection efficiency of about 61 % was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent Silicon Crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10 % of its amorphous level whereas in channeling along the (110) planes it is about 25 % . High efficiency deflection and small beam losses make this axial orientation of a Silicon Crystal a useful tool for the beam steering of high energy charged particles.
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observation of nuclear dechanneling length reduction for high energy protons in a short bent Crystal
Physics Letters B, 2015Co-Authors: W Scandale, F Cerutti, M Garattini, S Gilardoni, G Arduini, Mark Butcher, L Lari, A LechnerAbstract:Abstract Deflection of 400 GeV/ c protons by a short bent Silicon Crystal was studied at the CERN SPS. It was shown that the dechanneling probability increases while the dechanneling length decreases with an increase of incident angles of particles relative to the Crystal planes. The observation of the dechanneling length reduction provides evidence of the particle population increase at the top levels of transverse energies in the potential well of the planar channels.
