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  • deposition of Silicon Dioxide films with a non equilibrium atmospheric pressure plasma jet
    Plasma Sources Science and Technology, 2001
    Co-Authors: S E Babayan, J Y Jeong, Gary S Selwyn, A Schutze, M Moravej, Robert F Hicks
    Abstract:

    Silicon Dioxide films were grown using an atmospheric-pressure plasma jet that was produced by flowing oxygen and helium between two coaxial metal electrodes that were driven by 13.56 MHz radio frequency power. The plasma exiting from between the electrodes was mixed with tetraethoxysilane (TEOS), and directed onto a Silicon substrate held at 115-350 °C. Silicon Dioxide films were deposited at rates ranging from 20±2 to 300±25 nm min-1. The deposition rate increased with decreasing temperature and increasing TEOS pressure, oxygen pressure and RF power. For the latter two variables, the rate increased as follows: Rd∝P0.3O2(RF)1.4. Films grown at 115 °C were porous and contained adsorbed hydroxyl groups, whereas films grown at 350 °C were smooth, dense and free of impurities. These results suggest that the mechanism in the atmospheric pressure plasma is the same as that in low-pressure plasmas.

  • deposition of Silicon Dioxide films with an atmospheric pressure plasma jet
    Plasma Sources Science and Technology, 1998
    Co-Authors: S E Babayan, J Y Jeong, Jaeyoung Park, Gary S Selwyn, Robert F Hicks
    Abstract:

    A plasma jet has been developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream. The properties of the silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown Silicon Dioxide films at C.