Silicon Nitride

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Michal Lipson - One of the best experts on this subject based on the ideXlab platform.

  • compact narrow linewidth integrated laser based on a low loss Silicon Nitride ring resonator
    Optics Letters, 2017
    Co-Authors: Brian Stern, Xingchen Ji, Avik Dutt, Michal Lipson
    Abstract:

    We design and demonstrate a compact, narrow-linewidth integrated laser based on low-loss Silicon Nitride waveguides coupled to a III-V gain chip. By using a highly confined optical mode, we simultaneously achieve compact bends and ultra-low loss. We leverage the narrowband backreflection of a high-Q microring resonator to act as a cavity output mirror, a single-mode filter, and a propagation delay all in one. This configuration allows the ring to provide feedback and obtain a laser linewidth of 13 kHz with 1.7 mW output power around 1550 nm. This demonstration realizes a compact sub-millimeter Silicon Nitride laser cavity with a narrow linewidth.

  • Dual-pumped degenerate Kerr oscillator in a Silicon Nitride microresonator
    Optics Letters, 2015
    Co-Authors: Yoshitomo Okawachi, Alessandro Farsi, Kevin Luke, Sven Ramelow, Mengjie Yu, Michal Lipson, Daniel O. Carvalho, Alexander L Gaeta
    Abstract:

    We demonstrate a degenerate parametric oscillator in a Silicon-Nitride microresonator. We use two frequency-detuned pump waves to perform parametric four-wave mixing and operate in the normal group-velocity dispersion regime to produce signal and idler fields that are frequency degenerate. Our theoretical modeling shows that this regime enables generation of bimodal phase states, analogous to the \c{hi}(2)-based degenerate OPO. Our system offers potential for realization of CMOS-chip-based coherent optical computing and an all-optical quantum random number generator.

  • octave spanning frequency comb generation in a Silicon Nitride chip
    Optics Letters, 2011
    Co-Authors: Yoshitomo Okawachi, Michal Lipson, Jacob S Levy, Kasturi Saha, Henry Y Wen, Alexander L Gaeta
    Abstract:

    We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q Silicon Nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF amplitude noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.

  • high confinement micron scale Silicon Nitride high q ring resonator
    Optics Express, 2009
    Co-Authors: Alexander Gondarenko, Jacob S Levy, Michal Lipson
    Abstract:

    We demonstrate high confinement, low-loss Silicon Nitride ring resonators with intrinsic quality factor (Q) of 3∗106 operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

Jacob S Levy - One of the best experts on this subject based on the ideXlab platform.

  • octave spanning frequency comb generation in a Silicon Nitride chip
    Optics Letters, 2011
    Co-Authors: Yoshitomo Okawachi, Michal Lipson, Jacob S Levy, Kasturi Saha, Henry Y Wen, Alexander L Gaeta
    Abstract:

    We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q Silicon Nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF amplitude noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.

  • harmonic generation in Silicon Nitride ring resonators
    Optics Express, 2011
    Co-Authors: Jacob S Levy, Mark A Foste, Alexande L Gaeta, Michal Lipso
    Abstract:

    We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of Silicon Nitride (Si3N4) with the Silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of the process, we detect the second-harmonic output in the visible wavelength range with milliwatt input powers at telecom wavelengths. We also observe third-harmonic generation from the intrinsic χ(3) susceptibility of the Silicon Nitride. Phase matching of the harmonic processes occurs due to the near coincidence of indices of refraction of the fundamental mode at the pump frequency and the corresponding higher-order modes of the harmonic fields.

  • high confinement micron scale Silicon Nitride high q ring resonator
    Optics Express, 2009
    Co-Authors: Alexander Gondarenko, Jacob S Levy, Michal Lipson
    Abstract:

    We demonstrate high confinement, low-loss Silicon Nitride ring resonators with intrinsic quality factor (Q) of 3∗106 operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

Alexander L Gaeta - One of the best experts on this subject based on the ideXlab platform.

  • Dual-pumped degenerate Kerr oscillator in a Silicon Nitride microresonator
    Optics Letters, 2015
    Co-Authors: Yoshitomo Okawachi, Alessandro Farsi, Kevin Luke, Sven Ramelow, Mengjie Yu, Michal Lipson, Daniel O. Carvalho, Alexander L Gaeta
    Abstract:

    We demonstrate a degenerate parametric oscillator in a Silicon-Nitride microresonator. We use two frequency-detuned pump waves to perform parametric four-wave mixing and operate in the normal group-velocity dispersion regime to produce signal and idler fields that are frequency degenerate. Our theoretical modeling shows that this regime enables generation of bimodal phase states, analogous to the \c{hi}(2)-based degenerate OPO. Our system offers potential for realization of CMOS-chip-based coherent optical computing and an all-optical quantum random number generator.

  • octave spanning frequency comb generation in a Silicon Nitride chip
    Optics Letters, 2011
    Co-Authors: Yoshitomo Okawachi, Michal Lipson, Jacob S Levy, Kasturi Saha, Henry Y Wen, Alexander L Gaeta
    Abstract:

    We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q Silicon Nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF amplitude noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30 dB reduction in noise as the pump frequency is tuned into the cavity resonance.

Michal Lipso - One of the best experts on this subject based on the ideXlab platform.

  • octave spanning coherent supercontinuum generation in a Silicon Nitride waveguide
    Optics Letters, 2015
    Co-Authors: Adrea R Johnso, Yoshitomo Okawachi, Aline S Maye, Alexande Klenne, Kevi Luke, Eri S Lamb, Michael R E Lamo, Chaitanya Joshi, Frank W Wise, Michal Lipso
    Abstract:

    We demonstrate the generation of a supercontinuum spanning more than 1.4 octaves in a Silicon Nitride waveguide using sub-100-fs pulses at 1 μm generated by either a 53-MHz, diode-pumped ytterbium (Yb) fiber laser or a 1-GHz, Yb:CaAlGdO4 (Yb:CALGO) laser. Our numerical simulations show that the broadband supercontinuum is fully coherent, and a spectral interference measurement is used to verify that the supercontinuum generated with the Yb:CALGO laser possesses a high degree of coherence over the majority of its spectral bandwidth. This coherent spectrum may be utilized for optical coherence tomography, spectroscopy, and frequency metrology.

  • new cmos compatible platforms based on Silicon Nitride and hydex for nonlinear optics
    Nature Photonics, 2013
    Co-Authors: David J Moss, Alexande L Gaeta, Roberto Morandotti, Michal Lipso
    Abstract:

    This article reviews recent progress in the use of Silicon Nitride and Hydex as non-Silicon-based CMOS-compatible platforms for nonlinear optics. New capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement using these materials, and their potential future impact and challenges are covered.

  • harmonic generation in Silicon Nitride ring resonators
    Optics Express, 2011
    Co-Authors: Jacob S Levy, Mark A Foste, Alexande L Gaeta, Michal Lipso
    Abstract:

    We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of Silicon Nitride (Si3N4) with the Silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of the process, we detect the second-harmonic output in the visible wavelength range with milliwatt input powers at telecom wavelengths. We also observe third-harmonic generation from the intrinsic χ(3) susceptibility of the Silicon Nitride. Phase matching of the harmonic processes occurs due to the near coincidence of indices of refraction of the fundamental mode at the pump frequency and the corresponding higher-order modes of the harmonic fields.

Ali Adibi - One of the best experts on this subject based on the ideXlab platform.

  • vertical integration of high q Silicon Nitride microresonators into Silicon on insulator platform
    Optics Express, 2013
    Co-Authors: Qing Li, Ali A Eftekhar, Majid Sodagar, Amir H Atabaki, Ali Adibi
    Abstract:

    We demonstrate a vertical integration of high-Q Silicon Nitride microresonators into the Silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss Silicon Nitride films with a thickness of 400 nm are successfully grown, enabling compact Silicon Nitride microresonators with ultra-high intrinsic Qs (∼ 6 × 106 for 60 μm radius and ∼ 2 × 107 for 240 μm radius). The coupling between the Silicon Nitride microresonator and the underneath Silicon waveguide is based on evanescent coupling with Silicon dioxide as buffer. Selective coupling to a desired radial mode of the Silicon Nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius Silicon Nitride microresonator has been successfully integrated into the Silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 106.