The Experts below are selected from a list of 84429 Experts worldwide ranked by ideXlab platform
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
-
thermal stress implications in athermal tio2 waveguides on a Silicon Substrate
Optics Express, 2014Co-Authors: Jock Bovington, Kwangting Cheng, Rui Wu, John E BowersAbstract:Ring resonators with TiO2 core confinement factors from 0.07 to 0.42 are fabricated and measured for thermal sensitivity achieving −2.9 pm/K thermal drift in the best case. Materials used are CMOS compatible (TiO2, SiO2 and Si3N4) on a Si Substrate. The under discussed role of stress in thermo-optic behavior is clearly observed when contrasting waveguides buried in SiO2 to those with etched sidewalls revealed to air. Multiphysics simulations are conducted to provide a theoretical explanation of this phenomenon in contrast to the more widely reported theories on thermo-optic behavior dominated by confinement factor.
-
1310nm Silicon evanescent laser
Optics Express, 2007Co-Authors: Hsuhao Chang, Alexander W Fang, M N Sysak, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:We report the first 1310 nm hybrid laser on a Silicon Substrate. This laser operates continuous wave (C.W.) up to 105 °C. The room temperature threshold current of this laser is 30 mA, and the maximum single sided fiber-coupled output power is 5.5 mW.
Bart Kuyken - One of the best experts on this subject based on the ideXlab platform.
-
dispersive wave based octave spanning supercontinuum generation in ingap membrane waveguides on a Silicon Substrate
Optics Letters, 2015Co-Authors: Utsav Dave, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther Roelkens, Charles Ciret, Simonpierre Gorza, Bart KuykenAbstract:We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a Silicon Substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.
-
octave spanning supercontinuum generation in ingap waveguides on a Silicon Substrate at 1550 nm
Integrated Photonics Research Silicon and Nano Photonics Proceedings, 2015Co-Authors: Utsav Dave, Bart Kuyken, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther RoelkensAbstract:We present an octave spanning supercontinuum (at the -35 dB level) ranging from 1100 nm to 2500 nm in InGaP photonic wire waveguides that are bonded to a Silicon Substrate and pumped by an ultrashort pulsed laser centered at 1550 nm.
Utsav Dave - One of the best experts on this subject based on the ideXlab platform.
-
dispersive wave based octave spanning supercontinuum generation in ingap membrane waveguides on a Silicon Substrate
Optics Letters, 2015Co-Authors: Utsav Dave, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther Roelkens, Charles Ciret, Simonpierre Gorza, Bart KuykenAbstract:We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a Silicon Substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.
-
octave spanning supercontinuum generation in ingap waveguides on a Silicon Substrate at 1550 nm
Integrated Photonics Research Silicon and Nano Photonics Proceedings, 2015Co-Authors: Utsav Dave, Bart Kuyken, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther RoelkensAbstract:We present an octave spanning supercontinuum (at the -35 dB level) ranging from 1100 nm to 2500 nm in InGaP photonic wire waveguides that are bonded to a Silicon Substrate and pumped by an ultrashort pulsed laser centered at 1550 nm.
Gunther Roelkens - One of the best experts on this subject based on the ideXlab platform.
-
dispersive wave based octave spanning supercontinuum generation in ingap membrane waveguides on a Silicon Substrate
Optics Letters, 2015Co-Authors: Utsav Dave, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther Roelkens, Charles Ciret, Simonpierre Gorza, Bart KuykenAbstract:We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a Silicon Substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.
-
octave spanning supercontinuum generation in ingap waveguides on a Silicon Substrate at 1550 nm
Integrated Photonics Research Silicon and Nano Photonics Proceedings, 2015Co-Authors: Utsav Dave, Bart Kuyken, Sylvain Combrie, Alfredo De Rossi, F Raineri, Gunther RoelkensAbstract:We present an octave spanning supercontinuum (at the -35 dB level) ranging from 1100 nm to 2500 nm in InGaP photonic wire waveguides that are bonded to a Silicon Substrate and pumped by an ultrashort pulsed laser centered at 1550 nm.
Kaili Zhang - One of the best experts on this subject based on the ideXlab platform.
-
development of a nano al cuo based energetic material on Silicon Substrate
Applied Physics Letters, 2007Co-Authors: Kaili Zhang, Carole Rossi, Christophe Tenailleau, G Ardila A Rodriguez, Pierre AlphonseAbstract:Nanoenergetic materials (nEMs) have improved performances compared to their bulk counterpart or microcounterpart. The authors propose an approach to synthesize an Al∕CuO based nEM that has several advantages over previous investigations such as enhanced contact, reduced impurities and Al oxidation, tailored dimensions, and easier integration into microsystem. CuO nanowires are synthesized by thermally annealing Cu film deposited onto Silicon. Nano-Al is integrated with the nanowires to realize an Al∕CuO based nEM. The synthesized nEM is characterized by scanning electron microscopy, high resolution transmission electron microscopy, x-ray diffraction, differential thermal analysis, and differential scanning calorimetry.
-
synthesis of large area and aligned copper oxide nanowires from copper thin film on Silicon Substrate
Nanotechnology, 2007Co-Authors: Kaili Zhang, Carole Rossi, Christophe Tenailleau, Pierre Alphonse, Jeanyves ChanechingAbstract:Large-area and aligned copper oxide nanowires have been synthesized by thermal annealing of copper thin films deposited onto Silicon Substrate. The effects of the film deposition method, annealing temperature, film thickness, annealing gas, and patterning by photolithography are systematically investigated. Long and aligned nanowires can only be formed within a narrow temperature range from 400 to 500°C. Electroplated copper film is favourable for the nanowire growth, compared to that deposited by thermal evaporation. Annealing copper thin film in static air produces large-area, uniform, but not well vertically aligned nanowires along the thin film surface. Annealing copper thin film under a N2/O2 gas flow generates vertically aligned, but not very uniform nanowires on large areas. Patterning copper thin film by photolithography helps to synthesize large-area, uniform, and vertically aligned nanowires along the film surface. The copper thin film is converted into bicrystal CuO nanowires, Cu2O film, and also perhaps some CuO film after the thermal treatment in static air. Only CuO in the form of bicrystal nanowires and thin film is observed after the copper thin film is annealed under a N2/O2 gas flow.
