The Experts below are selected from a list of 43443 Experts worldwide ranked by ideXlab platform

Anders Hagfeldt - One of the best experts on this subject based on the ideXlab platform.

C Petrovic - One of the best experts on this subject based on the ideXlab platform.

  • the electric pulses induced multi resistance States in the hysteresis temperature range of 1t tas2 and 1t tas1 6se0 4
    arXiv: Materials Science, 2020
    Co-Authors: C Petrovic
    Abstract:

    The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the resistance are excited by electric pulses at a fixed temperature forming multi metastable like States. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance States or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of Solid-State Devices.

  • the electric pulses induced multi resistance States in the hysteresis temperature range of 1t tas2 and 1t tas1 6se0 4
    Applied Physics Letters, 2020
    Co-Authors: C Petrovic
    Abstract:

    The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multi-steps of the resistance are excited by electric pulses at a fixed temperature forming multi-metastable like States. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance States or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of Solid-State Devices.

Hj Snaith - One of the best experts on this subject based on the ideXlab platform.

  • Lessons Learned: From Dye-Sensitized Solar Cells to All-Solid-State Hybrid Devices
    Advanced Materials, 2014
    Co-Authors: Henry J Snaith, Hj Snaith
    Abstract:

    The field of solution-processed photovoltaic cells is currently in its second spring. The dye-sensitized solar cell is a widely studied and longstanding candidate for future energy generation. Recently, inorganic absorber-based Devices have reached new record efficiencies, with the benefits of all-Solid-State Devices. In this rapidly changing environment, this review sheds light on recent developments in all-Solid-State solar cells in terms of electrode architecture, alternative sensitizers, and hole-transporting materials. These concepts are of general applicability to many next-generation device platforms.

Jianshu Cao - One of the best experts on this subject based on the ideXlab platform.

  • efficiency at maximum power of a laser quantum heat engine enhanced by noise induced coherence
    Physical Review E, 2018
    Co-Authors: Konstantin E Dorfman, Jianshu Cao
    Abstract:

    Quantum coherence has been demonstrated in various systems including organic solar cells and Solid State Devices. In this article, we report the lower and upper bounds for the performance of quantum heat engines determined by the efficiency at maximum power. Our prediction based on the canonical three-level Scovil and Schulz-Dubois maser model strongly depends on the ratio of system-bath couplings for the hot and cold baths and recovers the theoretical bounds established previously for the Carnot engine. Further, introducing a fourth level to the maser model can enhance the maximal power and its efficiency, thus demonstrating the importance of quantum coherence in the thermodynamics and operation of the heat engines beyond the classical limit.

Alex Q Huang - One of the best experts on this subject based on the ideXlab platform.

  • Performance evaluation of multiple Si and SiC Solid State Devices for circuit breaker application in 380VDC delivery system
    2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016
    Co-Authors: Kai Tan, Xiaoqing Song, Chang De Peng, Pengkun Liu, Alex Q Huang
    Abstract:

    The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compare with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection is one of them. The 1200V SiC Devices has been developed by many manufacturers in recent years which makes them good candidates in DC circuit breaker application. In this paper, the 380V DC circuit breaker employing Solid State Devices for DC power delivery system has been proposed and introduced. The criteria of device characteristics particularly for DC Solid State circuit breaker application is discussed and defined. Characteristics of 4 different Si and SiC Solid State Devices in similar power rating have been compared based on defined criteria. The pros and cons of different Devices candidates is introduced with test results for DC circuit breaker application.

  • Static and dynamic performance evaluation of >13 kV SiC-ETO and its application as a Solid-State circuit breaker
    Materials Science Forum, 2014
    Co-Authors: Mohammad Ali Rezaei, Gang Yao Wang, Alex Q Huang, John W. Palmour, Lin Cheng, Charles Scozzie
    Abstract:

    This study addresses the transient and steady-State performance of a >13 kV SiC ETO as a Solid-State Circuit Breaker (SSCB). The developed SiC-ETO is based on a 1 cm2, 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-State voltage drop at different temperatures and different currents has been carried out in this paper. Furthermore, transient performance of the device, including the turn off energy of the device has been studied. Also, the superior performance of the p-type SiC-ETO has been exploited to design and implement a Solid-State circuit breaker. The studies verify the superiority of the SiC p-ETO compared to other Solid State Devices for this application.

  • Static and dynamic characterization of a >13kV SiC p-ETO device
    Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014
    Co-Authors: Mohammad Ali Rezaei, Gang Yao Wang, Alex Q Huang, Lin Cheng, Charles Scozzie
    Abstract:

    This study addresses the transient and steady-State performance of a >13 kV SiC p-ETO. The developed SiC p-ETO is based on a 1 cm2, 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-State voltage drop at different temperatures and different currents is carried out in this paper. Furthermore, transient performance of the device, including the turn off energy and also the Safe Operating Area (SOA) of the device has been studied. Also, the superior performance of the p-type SiC-ETO has been exploited to design and implement a Solid-State circuit breaker. The studies verify the superiority of the SiC pETO compared to other Solid State Devices for this application.