The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
R Klenk - One of the best experts on this subject based on the ideXlab platform.
-
quality and stability of compound indium sulphide as Source Material for buffer layers in cu in ga se2 solar cells
Solar Energy Materials and Solar Cells, 2009Co-Authors: Paul Pistor, R Caballero, Dimitrios Hariskos, Victor Izquierdoroca, Rolf Wachter, Susan Schorr, R KlenkAbstract:Abstract Indium sulphide layers were deposited by thermal evaporation from compound In 2 S 3 powder provided by different suppliers. The Source Material quality was systematically analysed in terms of contamination, stoichiometry, grain size, evaporation behaviour and crystallinity. It was found to vary significantly for different suppliers. The influence of Source Material quality and stability on In 2 S 3 layer growth and properties were investigated by various optical, crystallographic and surface analysis methods. The findings were correlated with the performance of solar cells prepared with an In 2 S 3 buffer layer. This includes the analysis of jV-curves and quantum efficiencies of solar cells prepared with different Cu ( In , Ga ) Se 2 absorbers. After a post annealing step in air, best cells reached a certified efficiency of 15.2% with remarkably high fill factor (75.6%) and open circuit voltage (677 mV).
Shigeru Niki - One of the best experts on this subject based on the ideXlab platform.
-
Efficiency enhancement of flexible CIGS solar cells using alkali-silicate glass thin layers as an alkali Source Material
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009Co-Authors: Shogo Ishizuka, Akimasa Yamada, Shigeru NikiAbstract:We have demonstrated a technique to allow fine control of the alkali doping levels in CIGS absorber layers using alkali-silicate glass thin films (ASTL) of various thicknesses deposited on substrates prior to the sputtering of the Mo back contact layer. This technique can be applied for a wide variety of substrates. Using this technique, energy conversion efficiencies of 17.4% and 17.7% have been demonstrated using a Ti-foil substrate and a flexible zirconia sheet substrate, respectively (the CIGS absorber layers were grown at 550°C). In addition, a 14.7%-efficiency has been demonstrated using a polyimide substrate with the use of a low temperature (400°C)-grown CIGS layer. Variations in the structural, optical, and electrical properties of CIGS films grown on ASTL and the Na-effect observed from the CIGS films are discussed.
-
Flexible Cu ( In , Ga)Se 2 solar cells fabricated using alkali-silicate glass thin layers as an alkali Source Material
Journal of Renewable and sustainable energy, 2009Co-Authors: Shogo Ishizuka, Paul Fons, Akimasa Yamada, Shigeru NikiAbstract:Flexible CuIn,GaSe2 CIGS solar cells were fabricated using alkali-silicate glass thin layers ASTL as an alkali Source Material deposited on various flexible sub- strates prior to the Mo backcontact layer deposition. Control of univalent alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of ex- cessively thick ASTL led to a degradation in cell performance. The quantum effi- ciency curves of CIGS solar cells fabricated using ASTL showed enhanced absorp- tion in the long wavelength region. The photovoltaic performance dependence on a variety of substrate Materials is also discussed.
-
flexible cu in ga se2 solar cells fabricated using alkali silicate glass thin layers as an alkali Source Material
Journal of Renewable and Sustainable Energy, 2009Co-Authors: Shogo Ishizuka, Paul Fons, Akimasa Yamada, Shigeru NikiAbstract:Flexible Cu(In,Ga)Se2 (CIGS) solar cells were fabricated using alkali-silicate glass thin layers (ASTL) as an alkali Source Material deposited on various flexible substrates prior to the Mo backcontact layer deposition. Control of univalent alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of excessively thick ASTL led to a degradation in cell performance. The quantum efficiency curves of CIGS solar cells fabricated using ASTL showed enhanced absorption in the long wavelength region. The photovoltaic performance dependence on a variety of substrate Materials is also discussed.
Paul Pistor - One of the best experts on this subject based on the ideXlab platform.
-
quality and stability of compound indium sulphide as Source Material for buffer layers in cu in ga se2 solar cells
Solar Energy Materials and Solar Cells, 2009Co-Authors: Paul Pistor, R Caballero, Dimitrios Hariskos, Victor Izquierdoroca, Rolf Wachter, Susan Schorr, R KlenkAbstract:Abstract Indium sulphide layers were deposited by thermal evaporation from compound In 2 S 3 powder provided by different suppliers. The Source Material quality was systematically analysed in terms of contamination, stoichiometry, grain size, evaporation behaviour and crystallinity. It was found to vary significantly for different suppliers. The influence of Source Material quality and stability on In 2 S 3 layer growth and properties were investigated by various optical, crystallographic and surface analysis methods. The findings were correlated with the performance of solar cells prepared with an In 2 S 3 buffer layer. This includes the analysis of jV-curves and quantum efficiencies of solar cells prepared with different Cu ( In , Ga ) Se 2 absorbers. After a post annealing step in air, best cells reached a certified efficiency of 15.2% with remarkably high fill factor (75.6%) and open circuit voltage (677 mV).
Shogo Ishizuka - One of the best experts on this subject based on the ideXlab platform.
-
Efficiency enhancement of flexible CIGS solar cells using alkali-silicate glass thin layers as an alkali Source Material
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009Co-Authors: Shogo Ishizuka, Akimasa Yamada, Shigeru NikiAbstract:We have demonstrated a technique to allow fine control of the alkali doping levels in CIGS absorber layers using alkali-silicate glass thin films (ASTL) of various thicknesses deposited on substrates prior to the sputtering of the Mo back contact layer. This technique can be applied for a wide variety of substrates. Using this technique, energy conversion efficiencies of 17.4% and 17.7% have been demonstrated using a Ti-foil substrate and a flexible zirconia sheet substrate, respectively (the CIGS absorber layers were grown at 550°C). In addition, a 14.7%-efficiency has been demonstrated using a polyimide substrate with the use of a low temperature (400°C)-grown CIGS layer. Variations in the structural, optical, and electrical properties of CIGS films grown on ASTL and the Na-effect observed from the CIGS films are discussed.
-
Flexible Cu ( In , Ga)Se 2 solar cells fabricated using alkali-silicate glass thin layers as an alkali Source Material
Journal of Renewable and sustainable energy, 2009Co-Authors: Shogo Ishizuka, Paul Fons, Akimasa Yamada, Shigeru NikiAbstract:Flexible CuIn,GaSe2 CIGS solar cells were fabricated using alkali-silicate glass thin layers ASTL as an alkali Source Material deposited on various flexible sub- strates prior to the Mo backcontact layer deposition. Control of univalent alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of ex- cessively thick ASTL led to a degradation in cell performance. The quantum effi- ciency curves of CIGS solar cells fabricated using ASTL showed enhanced absorp- tion in the long wavelength region. The photovoltaic performance dependence on a variety of substrate Materials is also discussed.
-
flexible cu in ga se2 solar cells fabricated using alkali silicate glass thin layers as an alkali Source Material
Journal of Renewable and Sustainable Energy, 2009Co-Authors: Shogo Ishizuka, Paul Fons, Akimasa Yamada, Shigeru NikiAbstract:Flexible Cu(In,Ga)Se2 (CIGS) solar cells were fabricated using alkali-silicate glass thin layers (ASTL) as an alkali Source Material deposited on various flexible substrates prior to the Mo backcontact layer deposition. Control of univalent alkali metal incorporation into the CIGS layer with the use of ASTL was demonstrated regardless of the presence of other multivalent metal impurities in ASTL. Dramatic enhancement in cell efficiencies using ASTL was observed though the use of excessively thick ASTL led to a degradation in cell performance. The quantum efficiency curves of CIGS solar cells fabricated using ASTL showed enhanced absorption in the long wavelength region. The photovoltaic performance dependence on a variety of substrate Materials is also discussed.
Sanatan Chattopadhyay - One of the best experts on this subject based on the ideXlab platform.
-
Utilization of nanoporous biosilica of diatoms as a potential Source Material for fabrication of nanoelectronic device and their characterization
Journal of Applied Phycology, 2020Co-Authors: Rahul Bose, Rajib Saha, Sanatan ChattopadhyayAbstract:Biosilica obtained from frustules of diatoms have very delicate nanostructures similar to many micro- and nanofluidic devices. In the present investigation, a cheaper and ecofriendly metal-oxide-semiconductor (MOS) tool has been fabricated exploiting frustules of the diatom Halamphora subturgida . The structural, optical, and chemical characterizations of the cleaned frustules of cultured diatom were investigated through various techniques. Electron microscopic images revealed intricate morphology of the nanostructured silica with very minute pores making the frustules very hard but light Material. UV-Vis spectroscopy showed maximum absorbance at 223 nm. The absorption maximum for photoluminescence was centered at 462 nm and that of cathodoluminescence was at 439.9 nm and 466.6 nm. Bulk of extracted silicon dioxide (SiO_2) nano-powder from diatom frustules was used as a Source Material for preparing a high-quality crystalline film on P-type silicon (p-Si) by vapor-liquid-solid (VLS) method. The crystalline quality of the film was tested by X-ray diffraction (XRD) and the crystalline size obtained was 62 ± 2.4 nm. From scanning electron microscopic (SEM) investigation, the growth of a continuous film from diatom biosilica on p-Si substrate was revealed. The thickness of the as-grown SiO_2 film was 22.2 ± 1.6 nm, obtained from spectroscopic ellipsometry (SE) study. The performances of fabricated Al/SiO_2/Si metal-oxide-semiconductor capacitor were tested by measuring leakage current (~ 43 ± 8 × 10^−11 A μm^−2 at +2 V), capacitance-voltage, constant current (0.1 μA), and voltage stress (at − 2 V) for reliable gate dielectrics applications in MOS devices. Overall, the process was cost-effective and provides an alternative technique to design high-quality diatom-derived “Bio-SiO_2 films” on p-Si substrate. Graphical abstract
