The Experts below are selected from a list of 603 Experts worldwide ranked by ideXlab platform

Wenjie Chen - One of the best experts on this subject based on the ideXlab platform.

  • p-n junction theory in view of excess majority carriers
    'IOP Publishing', 2018
    Co-Authors: Jianhong Yang, Wenjie Chen, Yang Zhang, Guipeng Liu
    Abstract:

    The classical $p\text{-}n$ junction theory is reconstructed in view of “excess majority carriers”. The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an “accompanying electric field” and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of $p\text{-}n$ junction operation with physical conciseness

  • p n junction theory in view of excess majority carriers
    EPL, 2017
    Co-Authors: Jianhong Yang, Yang Zhang, Wenjie Chen
    Abstract:

    The classical p-n junction theory is reconstructed in view of "excess majority carriers". The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an "accompanying electric field" and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of p-n junction operation with physical conciseness. Copyright (C) EPLA, 2018

Jianhong Yang - One of the best experts on this subject based on the ideXlab platform.

  • p-n junction theory in view of excess majority carriers
    'IOP Publishing', 2018
    Co-Authors: Jianhong Yang, Wenjie Chen, Yang Zhang, Guipeng Liu
    Abstract:

    The classical $p\text{-}n$ junction theory is reconstructed in view of “excess majority carriers”. The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an “accompanying electric field” and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of $p\text{-}n$ junction operation with physical conciseness

  • p n junction theory in view of excess majority carriers
    EPL, 2017
    Co-Authors: Jianhong Yang, Yang Zhang, Wenjie Chen
    Abstract:

    The classical p-n junction theory is reconstructed in view of "excess majority carriers". The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an "accompanying electric field" and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of p-n junction operation with physical conciseness. Copyright (C) EPLA, 2018

Yang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • p-n junction theory in view of excess majority carriers
    'IOP Publishing', 2018
    Co-Authors: Jianhong Yang, Wenjie Chen, Yang Zhang, Guipeng Liu
    Abstract:

    The classical $p\text{-}n$ junction theory is reconstructed in view of “excess majority carriers”. The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an “accompanying electric field” and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of $p\text{-}n$ junction operation with physical conciseness

  • p n junction theory in view of excess majority carriers
    EPL, 2017
    Co-Authors: Jianhong Yang, Yang Zhang, Wenjie Chen
    Abstract:

    The classical p-n junction theory is reconstructed in view of "excess majority carriers". The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an "accompanying electric field" and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of p-n junction operation with physical conciseness. Copyright (C) EPLA, 2018

Guipeng Liu - One of the best experts on this subject based on the ideXlab platform.

  • p-n junction theory in view of excess majority carriers
    'IOP Publishing', 2018
    Co-Authors: Jianhong Yang, Wenjie Chen, Yang Zhang, Guipeng Liu
    Abstract:

    The classical $p\text{-}n$ junction theory is reconstructed in view of “excess majority carriers”. The effects of excess majority carriers, in addition to the excess minority carriers, are described analytically and integrated into the theory. The quantity and distribution of excess majority carriers are presented, which give rise to an “accompanying electric field” and guarantee the Space-Charge Neutrality of each side of the junction. The accompanying electric field is figured out analytically, and the contributions of majority carriers are clarified quantitatively, which enables the current continuity in either side of the junction. Furthermore, at any position in the quasi-neutral region, the various current components are solved in closed form and the net current is obtained in a straightforward way. The reconstructed theory provides a more thorough understanding of $p\text{-}n$ junction operation with physical conciseness

Ito H - One of the best experts on this subject based on the ideXlab platform.

  • High quality high current ion beam generation and transport systems including plasma-based Space Charge neutraliser
    2026
    Co-Authors: Ito H
    Abstract:

    This thesis discusses the development of an ion beam generation and transport system for the purpose of high current ion implantation and presents a method to achieve high quality beam generation and high transport efficiency. An advanced method of achieving ideal Space Charge neutralization of an ion beam as well as Charge neutralization of implanted targets has also been developed and presented. This study was carried out in five main categories as described below. 1. Beam optics: The optical properties of the ion beam have to be well controlled through various beam transport devices. Beam transfer matrix calculation and Poisson's equation solver were used to determine beam optics. 2. Plasma generation: The ion beam is extracted from a plasma generated in the ion source. Therefore, the quality of ion beams depends largely on the characteristics of the source plasma. Plasma diagnostic tools were used to understand the desired plasma conditions. 3. Space Charge neutralisation: Space Charge neutralisation is essential to transport high perveance beams because a beam without neutralisation develops a high electric potential in itself that would scatter beam ions away. A plasma based Charge neutraliser "Plasma Flood System" was developed to maintain Space Charge Neutrality during implantation. 4. Low energy beam extraction and transport: Beam extraction and transport become difficult at lower energy due to growth of emittance and Space Charge. Beam divergence had to be minimized by tight optical control. 5. Microwave plasma sources as ultimate ion source: A microwave source was developed to obtain high current, ultra clean ion beams and long source life. The characteristics of microwave plasmas differ significantly from whose generated by other methods such as DC excitation. The source achieved the highest recorded beam currents for various species. All the technology and the methods described above were combined to develop a state-of-the-art high current ion implanter that has achieved world leading beam performance