The Experts below are selected from a list of 213 Experts worldwide ranked by ideXlab platform

Mitsuru Imaizumi - One of the best experts on this subject based on the ideXlab platform.

  • preliminary study on super radiation resistant mechanical stack triple junction Space Solar Cell phoenix
    Photovoltaic Specialists Conference, 2019
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto, Hiroki Sugimoto, Shiro Kawakita
    Abstract:

    We propose a new Solar Cell that is highly suited for Space applications, comprising a top InGaP/GaAs dual-junction Solar Cell mechanically-stacked on a bottom CuInGaSe Solar Cell. In principle, the performance of this triple-junction structure, named PHOENIX Cell, can achieve a very high radiation resistance and can simultaneously provide high efficiencies. By adjusting current or voltage output of the bottom CIGS Cell, the top InGaP/GaAs Cell and the bottom CIGS Cell can be connected in series or parallel, respectively. We fabricate three types PHOENIX prototypes, that is, those connected in series and in parallel, and a large device, and characterize their performances including radiation resistance. The initial performances of the prototype Cells are not as high as those of conventional or inverted-metamorphic triple-junction Cells due to an unoptimized subCell structure. However, a high radiation resistance of the Cells is demonstrated for 1 MeV electron irradiation (fluence = 1×1015 cm−2). The remaining factors of I sc , V oc and P max of the prototype Cells are larger than 0.9. The results obtained in this study prove the validity of the PHOENIX concept.

  • radiation resistance of ingap gaas dual junction thin film Space Solar Cell
    Photovoltaic Specialists Conference, 2009
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto
    Abstract:

    Thinned III–V multi-junction Solar Cells can realize the advantages of being high-efficiency and light-weight, as such these Cells meets the requirement for higher W/kg and W/m3 Solar panels. Here we report the development results of a thin-film InGaP/GaAs dual-junction (TF2J) Solar Cell. In this paper, we study the radiation resistance of the TF2J Cells with efficiency of 20–23% under AM0, 1sun at 25°C. The Cells were subjected to proton irradiation with an energy range of 100keV–10MeV. The results were compared with the radiation resistance of a conventional InGaP/GaAs/Ge triple-junction (3J) Cell. In the proton energy range of 200–400keV, radiation resistance of the TF2J Cell is superior to that of the 3J Cell. Particularly, the Isc of the TF2J Cell is significantly higher than that of the 3J Cell after exposure to 380keV and 1MeV protons, which results in higher remaining factor of Pmax for the TF2J Cell. In addition, Voc of the Cells after the irradiations are almost equivalent, even though the TF2J Cell is a dual-junction structure. The higher Isc of the TF2J Cell after irradiation is due to higher radiation resistance of the GaAs sub-Cell according to EQE comparison.

  • modeling of degradation behavior of ingap gaas ge triple junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

  • Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

  • Activity and current status of R&D on Space Solar Cells in Japan
    Progress in Photovoltaics: Research and Applications, 2005
    Co-Authors: Mitsuru Imaizumi, T. Sumita, S. Matsuda, Takeshi Ohshima, Tatsuya Takamoto, Shirou Kawakita, Masafumi Yamaguchi
    Abstract:

    Japan's Research and Development (R&D) activities on high-performance III–V compound Space Solar Cells are presented. Studies of new CuInGaSe2 thin-film terrestrial Solar Cells for Space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple-junction Space Solar Cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual-junction Solar Cells and CuInGaSe2 thin-film Solar Cells, and radiation response of three component sub-Cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual-junction Cells and CuInGaSe2 thin-film Cells by Space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd.

Takeshi Ohshima - One of the best experts on this subject based on the ideXlab platform.

  • preliminary study on super radiation resistant mechanical stack triple junction Space Solar Cell phoenix
    Photovoltaic Specialists Conference, 2019
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto, Hiroki Sugimoto, Shiro Kawakita
    Abstract:

    We propose a new Solar Cell that is highly suited for Space applications, comprising a top InGaP/GaAs dual-junction Solar Cell mechanically-stacked on a bottom CuInGaSe Solar Cell. In principle, the performance of this triple-junction structure, named PHOENIX Cell, can achieve a very high radiation resistance and can simultaneously provide high efficiencies. By adjusting current or voltage output of the bottom CIGS Cell, the top InGaP/GaAs Cell and the bottom CIGS Cell can be connected in series or parallel, respectively. We fabricate three types PHOENIX prototypes, that is, those connected in series and in parallel, and a large device, and characterize their performances including radiation resistance. The initial performances of the prototype Cells are not as high as those of conventional or inverted-metamorphic triple-junction Cells due to an unoptimized subCell structure. However, a high radiation resistance of the Cells is demonstrated for 1 MeV electron irradiation (fluence = 1×1015 cm−2). The remaining factors of I sc , V oc and P max of the prototype Cells are larger than 0.9. The results obtained in this study prove the validity of the PHOENIX concept.

  • radiation resistance of ingap gaas dual junction thin film Space Solar Cell
    Photovoltaic Specialists Conference, 2009
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto
    Abstract:

    Thinned III–V multi-junction Solar Cells can realize the advantages of being high-efficiency and light-weight, as such these Cells meets the requirement for higher W/kg and W/m3 Solar panels. Here we report the development results of a thin-film InGaP/GaAs dual-junction (TF2J) Solar Cell. In this paper, we study the radiation resistance of the TF2J Cells with efficiency of 20–23% under AM0, 1sun at 25°C. The Cells were subjected to proton irradiation with an energy range of 100keV–10MeV. The results were compared with the radiation resistance of a conventional InGaP/GaAs/Ge triple-junction (3J) Cell. In the proton energy range of 200–400keV, radiation resistance of the TF2J Cell is superior to that of the 3J Cell. Particularly, the Isc of the TF2J Cell is significantly higher than that of the 3J Cell after exposure to 380keV and 1MeV protons, which results in higher remaining factor of Pmax for the TF2J Cell. In addition, Voc of the Cells after the irradiations are almost equivalent, even though the TF2J Cell is a dual-junction structure. The higher Isc of the TF2J Cell after irradiation is due to higher radiation resistance of the GaAs sub-Cell according to EQE comparison.

  • modeling of degradation behavior of ingap gaas ge triple junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

  • Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

  • Activity and current status of R&D on Space Solar Cells in Japan
    Progress in Photovoltaics: Research and Applications, 2005
    Co-Authors: Mitsuru Imaizumi, T. Sumita, S. Matsuda, Takeshi Ohshima, Tatsuya Takamoto, Shirou Kawakita, Masafumi Yamaguchi
    Abstract:

    Japan's Research and Development (R&D) activities on high-performance III–V compound Space Solar Cells are presented. Studies of new CuInGaSe2 thin-film terrestrial Solar Cells for Space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple-junction Space Solar Cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual-junction Solar Cells and CuInGaSe2 thin-film Solar Cells, and radiation response of three component sub-Cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual-junction Cells and CuInGaSe2 thin-film Cells by Space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd.

Zhao Yan-zheng - One of the best experts on this subject based on the ideXlab platform.

  • A Novel Robot of Manufacturing Space Solar Cell Arrays
    International Journal of Advanced Robotic Systems, 2007
    Co-Authors: Wu Yuexin, Zhao Yan-zheng, Fu Zhuang, Zhao Hui
    Abstract:

    This paper presents a novel robot employed to manufacture Space Solar Cell arrays. First of all including the mechanical configuration and control system, the architecture of the robot is described. Then the flow velocity field of adhesive in the dispensing needles is acquired based on hydrodynamics. The accurate section form model of adhesive dispensed on the Solar Cells is obtained, which is essential for the robot to control the uniformity of dispensing adhesive. Finally the experiment validates the feasibility and reliability of the robot system. The application of robots instead of manual work in manufacturing Space Solar Cell arrays will enhance the development of Space industry.

  • A Space Solar Cell bonding robot
    Frontiers of Mechanical Engineering in China, 2006
    Co-Authors: Zhao Yan-zheng, Fu Zhuang, Liu Ren-qiang, Dong Zhi
    Abstract:

    A Space Solar Cell bonding robot system which consists of a three-axis Cartesian coordinate’s robot, coating device, bonding device, orientation plate, and control subsystem was studied. A method, which can control the thickness of adhesive layer on the Solar Cell, was put forward and the mechanism was designed. Another method which can achieve the auto-bonding between thin cover-glass and the Space Solar Cell was studied and realized. It produced no air bubble in the adhesives layer under the condition of no vacuum environment, and ensures the assembly dislocation ⩽0. 1 mm. Compared to the conventional method, it has advantages such as no fragment exists, and no adhesives outflow onto the cover-glass and Solar Cells.

  • The Spreading Mechanism in the Coating Process of a Space Solar Cell
    Journal of Shanghai Jiaotong University, 2006
    Co-Authors: Zhao Yan-zheng
    Abstract:

    The bonding operation of a Space Solar Cell consists of three processes: adhesive coating from a syringe,adhesive's planar spreading and bonding of an anti-irradiation cover-glass to a Space Solar Cell.The adhesive's planar spreading on the Space Solar Cell was analyzed.Based on non-Newtonian fluid theory,the adhesive's planar spreading model was founded,the finite element software Adina was employed to trace the moving interface based on the method of Volume of Fluid(VOF),and experiments were performed to validate the simulative results.Thus the area and depth of the adhesive layer before bonding were obtained,and used as initial parameters in next bonding process.Meanwhile,a new solution for planar spreading was presented.

  • A Space Solar Cell Bonding Robot
    Journal of Shanghai Jiaotong University, 2005
    Co-Authors: Zhao Yan-zheng, Cao Qi-xin
    Abstract:

    A Space Solar Cell bonding robot was studied, which consists of a three-axis Cartesian coordinates robot, coating device, bonding device, orientation plate and control subsystem. A method which can control the thickness of adhesive layer on the Solar Cell was put forward and the mechanism was designed. Another method which can achieve the auto-bonding between thin cover-glass and the Space Solar Cell was studied and realized. It produces no air bubble in the adhesives layer under the condition of without vacuum environment and ensures the assembly dislocation ≤ 0.1 mm. Compared with the conventional method,it has such advantages that there is no fragment exists, and no adhesives outflows onto the cover-glass and (Solar) Cells.

  • Study on quality control in the bonding processing of Space Solar Cell
    Proceedings of 2004 International Conference on the Business of Electronic Product Reliability and Liability (IEEE Cat. No.04EX809), 1
    Co-Authors: Zhao Yan-zheng, Fu Zhuang, Cao Qi-xin, Yang Qing-hua, Chen Mingbo, Zhang Jun, J. Lee
    Abstract:

    The Solar Cell is widely used for Space power. The characteristic of anti-irradiation is one of the important differences between ordinary Solar Cells and Space Solar Cells. In order to ensure a Space Solar Cell works reliably in the Space environment, it is necessary to bond the anti-irradiation cover-glass to the Space Solar Cell active surface using a kind of adhesive, and it is vital to have a reasonable coating thickness. Combining robotics and adhesive-coating technology, this paper gives an automatic bonding system for Space Solar Cells, which can precisely control the coating thickness and realize bonding automation in non-vacuum conditions. Moreover, on the basis of the theory of non-Newtonian fluids, the paper presents a model for this system and deduces the formula for the coating thickness of Space Solar Cells. Experiments have been performed to validate this model.

Shin-ichiro Sato - One of the best experts on this subject based on the ideXlab platform.

  • modeling of degradation behavior of ingap gaas ge triple junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

  • Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction Space Solar Cell exposed to charged particles
    Journal of Applied Physics, 2009
    Co-Authors: Shin-ichiro Sato, Takeshi Ohshima, Mitsuru Imaizumi
    Abstract:

    Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) Space Solar Cells, which are exposed to charged particles (protons and electrons), is introduced using a one-dimensional optical device simulator: PC1D. The proposed method can reproduce the electrical degradation of 3J Solar Cells from fitting the external quantum efficiencies for subCells. In this modeling, carrier removal rate of base layer (RC) and damage coefficient of minority carrier diffusion length (KL) in each subCell are considered as radiation degradation parameters. Nonionizing energy loss (NIEL) analysis for both radiation degradation parameters is discussed. The radiation degradation of a 3J Solar Cell can be predicted from the results of degradation level in the each subCell estimated from correlativity between NIEL and both radiation degradation parameters.

Tatsuya Takamoto - One of the best experts on this subject based on the ideXlab platform.

  • preliminary study on super radiation resistant mechanical stack triple junction Space Solar Cell phoenix
    Photovoltaic Specialists Conference, 2019
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto, Hiroki Sugimoto, Shiro Kawakita
    Abstract:

    We propose a new Solar Cell that is highly suited for Space applications, comprising a top InGaP/GaAs dual-junction Solar Cell mechanically-stacked on a bottom CuInGaSe Solar Cell. In principle, the performance of this triple-junction structure, named PHOENIX Cell, can achieve a very high radiation resistance and can simultaneously provide high efficiencies. By adjusting current or voltage output of the bottom CIGS Cell, the top InGaP/GaAs Cell and the bottom CIGS Cell can be connected in series or parallel, respectively. We fabricate three types PHOENIX prototypes, that is, those connected in series and in parallel, and a large device, and characterize their performances including radiation resistance. The initial performances of the prototype Cells are not as high as those of conventional or inverted-metamorphic triple-junction Cells due to an unoptimized subCell structure. However, a high radiation resistance of the Cells is demonstrated for 1 MeV electron irradiation (fluence = 1×1015 cm−2). The remaining factors of I sc , V oc and P max of the prototype Cells are larger than 0.9. The results obtained in this study prove the validity of the PHOENIX concept.

  • radiation resistance of ingap gaas dual junction thin film Space Solar Cell
    Photovoltaic Specialists Conference, 2009
    Co-Authors: Mitsuru Imaizumi, Takeshi Ohshima, Tatsuya Takamoto
    Abstract:

    Thinned III–V multi-junction Solar Cells can realize the advantages of being high-efficiency and light-weight, as such these Cells meets the requirement for higher W/kg and W/m3 Solar panels. Here we report the development results of a thin-film InGaP/GaAs dual-junction (TF2J) Solar Cell. In this paper, we study the radiation resistance of the TF2J Cells with efficiency of 20–23% under AM0, 1sun at 25°C. The Cells were subjected to proton irradiation with an energy range of 100keV–10MeV. The results were compared with the radiation resistance of a conventional InGaP/GaAs/Ge triple-junction (3J) Cell. In the proton energy range of 200–400keV, radiation resistance of the TF2J Cell is superior to that of the 3J Cell. Particularly, the Isc of the TF2J Cell is significantly higher than that of the 3J Cell after exposure to 380keV and 1MeV protons, which results in higher remaining factor of Pmax for the TF2J Cell. In addition, Voc of the Cells after the irradiations are almost equivalent, even though the TF2J Cell is a dual-junction structure. The higher Isc of the TF2J Cell after irradiation is due to higher radiation resistance of the GaAs sub-Cell according to EQE comparison.

  • Activity and current status of R&D on Space Solar Cells in Japan
    Progress in Photovoltaics: Research and Applications, 2005
    Co-Authors: Mitsuru Imaizumi, T. Sumita, S. Matsuda, Takeshi Ohshima, Tatsuya Takamoto, Shirou Kawakita, Masafumi Yamaguchi
    Abstract:

    Japan's Research and Development (R&D) activities on high-performance III–V compound Space Solar Cells are presented. Studies of new CuInGaSe2 thin-film terrestrial Solar Cells for Space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple-junction Space Solar Cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual-junction Solar Cells and CuInGaSe2 thin-film Solar Cells, and radiation response of three component sub-Cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual-junction Cells and CuInGaSe2 thin-film Cells by Space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd.