The Experts below are selected from a list of 324 Experts worldwide ranked by ideXlab platform
S B Ippolito - One of the best experts on this subject based on the ideXlab platform.
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high Spatial Resolution subsurface thermal emission microscopy
Applied Physics Letters, 2004Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the Spatial Resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral Spatial Resolution of 1.4 μm and a longitudinal Spatial Resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm.
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high Spatial Resolution subsurface thermal emission microscopy
Lasers and Electro-Optics Society Meeting, 2003Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the Spatial Resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the Spatial distribution of temperature in a sample. The Spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal Spatial Resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal Spatial Resolution over conventional thermal emission microscopy, where the ultimate limit is 18 /spl mu/m.
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high Spatial Resolution subsurface microscopy
Applied Physics Letters, 2001Co-Authors: S B Ippolito, B B Goldberg, Murat S UnluAbstract:We present a high-Spatial-Resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited Spatial Resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral Spatial Resolution of better than 0.23 μm in subsurface inspection of Si integrated circuits at near infrared wavelengths.
Yusuf Leblebici - One of the best experts on this subject based on the ideXlab platform.
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high Spatial Resolution subsurface thermal emission microscopy
Applied Physics Letters, 2004Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the Spatial Resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral Spatial Resolution of 1.4 μm and a longitudinal Spatial Resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm.
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high Spatial Resolution subsurface thermal emission microscopy
Lasers and Electro-Optics Society Meeting, 2003Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the Spatial Resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the Spatial distribution of temperature in a sample. The Spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal Spatial Resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal Spatial Resolution over conventional thermal emission microscopy, where the ultimate limit is 18 /spl mu/m.
Murat S Unlu - One of the best experts on this subject based on the ideXlab platform.
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high Spatial Resolution subsurface thermal emission microscopy
Applied Physics Letters, 2004Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the Spatial Resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral Spatial Resolution of 1.4 μm and a longitudinal Spatial Resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm.
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high Spatial Resolution subsurface thermal emission microscopy
Lasers and Electro-Optics Society Meeting, 2003Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the Spatial Resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the Spatial distribution of temperature in a sample. The Spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal Spatial Resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal Spatial Resolution over conventional thermal emission microscopy, where the ultimate limit is 18 /spl mu/m.
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high Spatial Resolution subsurface microscopy
Applied Physics Letters, 2001Co-Authors: S B Ippolito, B B Goldberg, Murat S UnluAbstract:We present a high-Spatial-Resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited Spatial Resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral Spatial Resolution of better than 0.23 μm in subsurface inspection of Si integrated circuits at near infrared wavelengths.
B B Goldberg - One of the best experts on this subject based on the ideXlab platform.
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high Spatial Resolution subsurface thermal emission microscopy
Applied Physics Letters, 2004Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the Spatial Resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral Spatial Resolution of 1.4 μm and a longitudinal Spatial Resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm.
-
high Spatial Resolution subsurface thermal emission microscopy
Lasers and Electro-Optics Society Meeting, 2003Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the Spatial Resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the Spatial distribution of temperature in a sample. The Spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal Spatial Resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal Spatial Resolution over conventional thermal emission microscopy, where the ultimate limit is 18 /spl mu/m.
-
high Spatial Resolution subsurface microscopy
Applied Physics Letters, 2001Co-Authors: S B Ippolito, B B Goldberg, Murat S UnluAbstract:We present a high-Spatial-Resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited Spatial Resolution is improved beyond the limit of standard subsurface microscopy. By realizing a numerical aperture of 3.4, we experimentally demonstrate a lateral Spatial Resolution of better than 0.23 μm in subsurface inspection of Si integrated circuits at near infrared wavelengths.
M G Eraslan - One of the best experts on this subject based on the ideXlab platform.
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high Spatial Resolution subsurface thermal emission microscopy
Applied Physics Letters, 2004Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:We apply the numerical aperture increasing lens technique to subsurface thermal emission microscopy of Si integrated circuits. We achieve improvements in the amount of light collected and the Spatial Resolution, well beyond the limits of conventional thermal emission microscopy. We experimentally demonstrate a lateral Spatial Resolution of 1.4 μm and a longitudinal Spatial Resolution of 7.4 μm, for thermal imaging at free space wavelengths up to 5 μm.
-
high Spatial Resolution subsurface thermal emission microscopy
Lasers and Electro-Optics Society Meeting, 2003Co-Authors: S B Ippolito, S A Thorne, M G Eraslan, Murat S Unlu, B B Goldberg, Yusuf LeblebiciAbstract:In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the Spatial Resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the Spatial distribution of temperature in a sample. The Spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal Spatial Resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal Spatial Resolution over conventional thermal emission microscopy, where the ultimate limit is 18 /spl mu/m.
