The Experts below are selected from a list of 15 Experts worldwide ranked by ideXlab platform

S.j.g. Gift - One of the best experts on this subject based on the ideXlab platform.

  • A high-performance full-wave rectifier circuit
    International Journal of Electronics, 2000
    Co-Authors: S.j.g. Gift
    Abstract:

    A new circuit that enables basic Operational Amplifiers (Op Amps) such as the LM741 to produce precise full-wave rectification for frequencies up to and exceeding 100 kHz without waveform distortion is presented. The circuit is based on a Standard Op Amp precise rectifier that is modified by the inclusion of a current conveyor to improve the rectifying process.

  • Novel precision full-wave rectifier
    ICECS 2000. 7th IEEE International Conference on Electronics Circuits and Systems (Cat. No.00EX445), 2000
    Co-Authors: S.j.g. Gift
    Abstract:

    A novel electronic circuit that allows conventional Operational Amplifiers such as the LM741 to deliver precise full-wave rectified signals for a wide range of frequencies without distortion is described. The circuit utilises a Standard Op Amp configuration that is modified by the replacement of one Op Amp with a current conveyor to improve the rectifying process.

Aleksandr I. Serebryakov - One of the best experts on this subject based on the ideXlab platform.

  • The Non-Linear Differentiating Circuits of Correction of Transient Process in Differential Operational Amplifiers
    2018 19th International Conference of Young Specialists on Micro Nanotechnologies and Electron Devices (EDM), 2018
    Co-Authors: Nikolay N. Prokopenko, Anna V. Bugakova, Aleksandr I. Serebryakov
    Abstract:

    The nonlinear equivalent circuits for small and large signals of the input circuits of the classical BJT Operational Amplifier (Op-Amp), which relates to the basic functional nodes of analog-digital interfaces of modern automatic control systems and it has a significant effect on some of their dynamic parameters, are discussed. This enabled us to formulate a circuit method for connecting a differentiating correction circuit (DCC) of the transient to the Standard Op-Amp. Such solution reduces significantly the recharging time of the Op-Amp integrating capacitor (Cc1), which forms the given phase margin and the unity gain frequency. It is shown that, on a small signal, the additional differentiating capacitor Cc2has practically no effect on the Op-Amp Operation; however, it increases the maximum slew rate (SR) at the dynamic overload of the main Op-Amp input stage. The estimates of the SR limiting values are given with regard to the lag effect of the main Op-Amp functional nodes. The prOposed method of connecting a differentiating correction circuit effectively works both in the Op-Amps and in other electronic devices of automation and robotics (continuous voltage stabilizers with differential stages, comparators, etc., implemented by modern technological processes - BJT, BiJFet, SiGe, CMOS, SOI, SOS, etc.).

Pratul K. Ajmera - One of the best experts on this subject based on the ideXlab platform.

  • Noise analysis of an 0.8-V ultra-low power CMOS Operational Amplifier
    Noise in Devices and Circuits, 2003
    Co-Authors: Chuang Zhang, Ashok Srivastava, Pratul K. Ajmera
    Abstract:

    Noise due to back-gate forward bias between substrate and source of a MOSFET is analyzed and simulated. Noise level is compared between two CMOS circuits with and without back-gate forward bias. It is found that the output noise introduced by the back-gate forward bias method is only a few nV/square root (Hz), which only slightly increases the device noise. A CMOS Op-Amp is designed utilizing back-gate forward bias technique utilizing a level shift current mirror for Operation at ultra low-power in μW range. The designed Amplifier dissipates power of 40 uW and Operates at ± 0.4 V to achieve a gain of 77 dB. The noise in ultra low-power Op-Amp is also investigated. The total output noise density is about 30 μV/square root (Hz) in the ultra-low power Op-Amp design, which is lower than 65 μV/square root (Hz) of Standard Op-Amp. The signal to noise ratio of the ultra low-power Op-Amp is 44 dB.

Nikolay N. Prokopenko - One of the best experts on this subject based on the ideXlab platform.

  • The Non-Linear Differentiating Circuits of Correction of Transient Process in Differential Operational Amplifiers
    2018 19th International Conference of Young Specialists on Micro Nanotechnologies and Electron Devices (EDM), 2018
    Co-Authors: Nikolay N. Prokopenko, Anna V. Bugakova, Aleksandr I. Serebryakov
    Abstract:

    The nonlinear equivalent circuits for small and large signals of the input circuits of the classical BJT Operational Amplifier (Op-Amp), which relates to the basic functional nodes of analog-digital interfaces of modern automatic control systems and it has a significant effect on some of their dynamic parameters, are discussed. This enabled us to formulate a circuit method for connecting a differentiating correction circuit (DCC) of the transient to the Standard Op-Amp. Such solution reduces significantly the recharging time of the Op-Amp integrating capacitor (Cc1), which forms the given phase margin and the unity gain frequency. It is shown that, on a small signal, the additional differentiating capacitor Cc2has practically no effect on the Op-Amp Operation; however, it increases the maximum slew rate (SR) at the dynamic overload of the main Op-Amp input stage. The estimates of the SR limiting values are given with regard to the lag effect of the main Op-Amp functional nodes. The prOposed method of connecting a differentiating correction circuit effectively works both in the Op-Amps and in other electronic devices of automation and robotics (continuous voltage stabilizers with differential stages, comparators, etc., implemented by modern technological processes - BJT, BiJFet, SiGe, CMOS, SOI, SOS, etc.).

Chuang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Noise analysis of an 0.8-V ultra-low power CMOS Operational Amplifier
    Noise in Devices and Circuits, 2003
    Co-Authors: Chuang Zhang, Ashok Srivastava, Pratul K. Ajmera
    Abstract:

    Noise due to back-gate forward bias between substrate and source of a MOSFET is analyzed and simulated. Noise level is compared between two CMOS circuits with and without back-gate forward bias. It is found that the output noise introduced by the back-gate forward bias method is only a few nV/square root (Hz), which only slightly increases the device noise. A CMOS Op-Amp is designed utilizing back-gate forward bias technique utilizing a level shift current mirror for Operation at ultra low-power in μW range. The designed Amplifier dissipates power of 40 uW and Operates at ± 0.4 V to achieve a gain of 77 dB. The noise in ultra low-power Op-Amp is also investigated. The total output noise density is about 30 μV/square root (Hz) in the ultra-low power Op-Amp design, which is lower than 65 μV/square root (Hz) of Standard Op-Amp. The signal to noise ratio of the ultra low-power Op-Amp is 44 dB.