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D Kanjilal - One of the best experts on this subject based on the ideXlab platform.
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of β ga2o3 single crystals
Applied Physics Letters, 2021Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of the Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurements; nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. β-Ga2O3 is a Strategic Material for high-power optoelectronic applications. The present work reports the Seebeck coefficient measurement for single crystal Sn-doped β-Ga2O3 in a wide temperature range (80–630 K). The non-monotonic trend with large magnitude and a negative sign in the entire temperature range shows that electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and the presence of low-, mid-, and high-frequency phonon modes, respectively. The temperature-dependent (90–350 K) Hall effect measurement was carried out as a supplementary study. Hall mobility showed that μ ∝ T1.12 for T 220 K. Activation energies from the Seebeck coefficient and conductivity analysis revealed the presence of interband conduction due to impurity defects. The room temperature Seebeck coefficient, power factor, and thermal conductivity were found to be 68.57 ± 1.27 μV/K, 0.15 ± 0.04 μW/K2 cm, and 14.2 ± 0.6 W/mK, respectively. The value of the figure of merit for β-Ga2O3 was found to be ∼ 0.01 (300 K).
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of b eta ga2o3 single crystals
arXiv: Materials Science, 2020Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a Strategic Material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
Ashish Kumar - One of the best experts on this subject based on the ideXlab platform.
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of β ga2o3 single crystals
Applied Physics Letters, 2021Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of the Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurements; nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. β-Ga2O3 is a Strategic Material for high-power optoelectronic applications. The present work reports the Seebeck coefficient measurement for single crystal Sn-doped β-Ga2O3 in a wide temperature range (80–630 K). The non-monotonic trend with large magnitude and a negative sign in the entire temperature range shows that electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and the presence of low-, mid-, and high-frequency phonon modes, respectively. The temperature-dependent (90–350 K) Hall effect measurement was carried out as a supplementary study. Hall mobility showed that μ ∝ T1.12 for T 220 K. Activation energies from the Seebeck coefficient and conductivity analysis revealed the presence of interband conduction due to impurity defects. The room temperature Seebeck coefficient, power factor, and thermal conductivity were found to be 68.57 ± 1.27 μV/K, 0.15 ± 0.04 μW/K2 cm, and 14.2 ± 0.6 W/mK, respectively. The value of the figure of merit for β-Ga2O3 was found to be ∼ 0.01 (300 K).
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of b eta ga2o3 single crystals
arXiv: Materials Science, 2020Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a Strategic Material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
K Asokan - One of the best experts on this subject based on the ideXlab platform.
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of β ga2o3 single crystals
Applied Physics Letters, 2021Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of the Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurements; nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. β-Ga2O3 is a Strategic Material for high-power optoelectronic applications. The present work reports the Seebeck coefficient measurement for single crystal Sn-doped β-Ga2O3 in a wide temperature range (80–630 K). The non-monotonic trend with large magnitude and a negative sign in the entire temperature range shows that electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and the presence of low-, mid-, and high-frequency phonon modes, respectively. The temperature-dependent (90–350 K) Hall effect measurement was carried out as a supplementary study. Hall mobility showed that μ ∝ T1.12 for T 220 K. Activation energies from the Seebeck coefficient and conductivity analysis revealed the presence of interband conduction due to impurity defects. The room temperature Seebeck coefficient, power factor, and thermal conductivity were found to be 68.57 ± 1.27 μV/K, 0.15 ± 0.04 μW/K2 cm, and 14.2 ± 0.6 W/mK, respectively. The value of the figure of merit for β-Ga2O3 was found to be ∼ 0.01 (300 K).
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of b eta ga2o3 single crystals
arXiv: Materials Science, 2020Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a Strategic Material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
Ashutosh Patel - One of the best experts on this subject based on the ideXlab platform.
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of β ga2o3 single crystals
Applied Physics Letters, 2021Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of the Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurements; nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. β-Ga2O3 is a Strategic Material for high-power optoelectronic applications. The present work reports the Seebeck coefficient measurement for single crystal Sn-doped β-Ga2O3 in a wide temperature range (80–630 K). The non-monotonic trend with large magnitude and a negative sign in the entire temperature range shows that electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and the presence of low-, mid-, and high-frequency phonon modes, respectively. The temperature-dependent (90–350 K) Hall effect measurement was carried out as a supplementary study. Hall mobility showed that μ ∝ T1.12 for T 220 K. Activation energies from the Seebeck coefficient and conductivity analysis revealed the presence of interband conduction due to impurity defects. The room temperature Seebeck coefficient, power factor, and thermal conductivity were found to be 68.57 ± 1.27 μV/K, 0.15 ± 0.04 μW/K2 cm, and 14.2 ± 0.6 W/mK, respectively. The value of the figure of merit for β-Ga2O3 was found to be ∼ 0.01 (300 K).
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of b eta ga2o3 single crystals
arXiv: Materials Science, 2020Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a Strategic Material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
Bhera Ram Tak - One of the best experts on this subject based on the ideXlab platform.
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of β ga2o3 single crystals
Applied Physics Letters, 2021Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of the Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurements; nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. β-Ga2O3 is a Strategic Material for high-power optoelectronic applications. The present work reports the Seebeck coefficient measurement for single crystal Sn-doped β-Ga2O3 in a wide temperature range (80–630 K). The non-monotonic trend with large magnitude and a negative sign in the entire temperature range shows that electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and the presence of low-, mid-, and high-frequency phonon modes, respectively. The temperature-dependent (90–350 K) Hall effect measurement was carried out as a supplementary study. Hall mobility showed that μ ∝ T1.12 for T 220 K. Activation energies from the Seebeck coefficient and conductivity analysis revealed the presence of interband conduction due to impurity defects. The room temperature Seebeck coefficient, power factor, and thermal conductivity were found to be 68.57 ± 1.27 μV/K, 0.15 ± 0.04 μW/K2 cm, and 14.2 ± 0.6 W/mK, respectively. The value of the figure of merit for β-Ga2O3 was found to be ∼ 0.01 (300 K).
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wide range temperature dependent 80 630 k study of hall effect and the seebeck coefficient of b eta ga2o3 single crystals
arXiv: Materials Science, 2020Co-Authors: Ashish Kumar, Saurabh Singh, Bhera Ram Tak, Ashutosh Patel, K Asokan, D KanjilalAbstract:Investigation of Seebeck coefficient in ultra-wide bandgap Materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a Strategic Material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).