The Experts below are selected from a list of 324 Experts worldwide ranked by ideXlab platform
U Balachandran - One of the best experts on this subject based on the ideXlab platform.
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dielectric properties and energy storage capability of antiferroelectric pb 0 92 la 0 08 zr 0 95 ti 0 05 o 3 film on foil capacitors
Journal of Materials Research, 2009Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:Antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (E{sub AF} {approx} 270 kV/cm) and that for the reverse phase transition (E{sub FA} {approx} 230 kV/cm) were measured at room temperature on samples with PLZT films of {approx}1-{micro}m thickness. Relative permittivity of {approx}560 and dielectric loss of 5000 h when the capacitors are operated at room temperature with an applied field of {approx}300 kV/cm.
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dielectric properties of plzt film on foil capacitors
Materials Letters, 2008Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel foils to create film-on-foil capacitor sheets. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity {approx} 1300 and dielectric loss (tan {delta}) {approx} 0.05, leakage current density of 6.6 x 10{sup ? }9 A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength > 2.4 MV/cm. Based on the hysteresis loop measurement, an energy storage density of {approx} 17 J/cm{sup 3} was obtained for such a capacitor at 50% of the mean breakdown field.
Dokyun Kwon - One of the best experts on this subject based on the ideXlab platform.
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dielectric properties and energy storage capability of antiferroelectric pb 0 92 la 0 08 zr 0 95 ti 0 05 o 3 film on foil capacitors
Journal of Materials Research, 2009Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:Antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (E{sub AF} {approx} 270 kV/cm) and that for the reverse phase transition (E{sub FA} {approx} 230 kV/cm) were measured at room temperature on samples with PLZT films of {approx}1-{micro}m thickness. Relative permittivity of {approx}560 and dielectric loss of 5000 h when the capacitors are operated at room temperature with an applied field of {approx}300 kV/cm.
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dielectric properties of plzt film on foil capacitors
Materials Letters, 2008Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel foils to create film-on-foil capacitor sheets. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity {approx} 1300 and dielectric loss (tan {delta}) {approx} 0.05, leakage current density of 6.6 x 10{sup ? }9 A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength > 2.4 MV/cm. Based on the hysteresis loop measurement, an energy storage density of {approx} 17 J/cm{sup 3} was obtained for such a capacitor at 50% of the mean breakdown field.
M E Mchenry - One of the best experts on this subject based on the ideXlab platform.
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irreversibility lines and pinning force density of aligned bi pb sub 2 sr sub 2 ca sub 2 cu sub 3 o sub x single crystals
IEEE Transactions on Applied Superconductivity, 1997Co-Authors: Shaoyan Chu, M E MchenryAbstract:DC magnetic properties of aligned (Bi,Pb)/sub 2/Sr/sub 2/Ca/sub 2/Cu/sub 3/O/sub x/ single crystals have been measured for the first time using a SQUID magnetometer in field up to 5 T and in the temperature range from 5 K to 150 K. The results confirm the existence of a broad temperature and field regime with completely reversible magnetization for these crystals. The temperature dependence of the irreversibility field H*(T) is determined from both M-H and M-T curves with fields oriented perpendicular to the ab plane of the crystal lattice. A strong field dependence of critical current density has been observed in these pristine single crystals with very weak pinning. These observations emphasize the importance of artificially introducing pinning sites in BSCCO material used for applications. Non-linear scaling models have been used to fit our experimental results to estimate the elemental pinning force density and the effective pinning potential.
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behavior of critical currents in bi pb sr ca cu o ag tapes from transport and magnetization measurements dependence upon temperature magnetic field and field orientation
Physical Review B, 1992Co-Authors: M P Maley, P J Kung, J Y Coulter, W L Carter, G N Riley, M E MchenryAbstract:We have measured the dependence of the transport critical current density on magnetic field and temperature of a high-{ital J}{sub {ital c}} Bi-Sr-Ca-Cu-O/Ag tape sample. At low temperature, {ital J}{sub {ital c}}{gt}10{sup 4} A/cm{sup 2} extending to high fields as previously reported by several groups. For {ital T}{gt}20 K and with the applied field parallel to the {ital c} axis {ital J}{sub {ital c}} declines precipitously with increasing field and temperature, reflecting the properties of intragranular pinning. The variation of {ital J}{sub {ital c}} with the angle between {ital B} and the tape normal is consistent with a two-dimensional model of the vortex lattice. Independent determination of {ital J}{sub {ital c}} by magnetic hysteresis measurement shows rough agreement with transport {ital J}{sub {ital c}}'s at low fields but falls below by a factor that increases with increasing field and temperature. This can be accounted for by a model for thermally activated flux motion.
Manoj Narayanan - One of the best experts on this subject based on the ideXlab platform.
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dielectric properties and energy storage capability of antiferroelectric pb 0 92 la 0 08 zr 0 95 ti 0 05 o 3 film on foil capacitors
Journal of Materials Research, 2009Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:Antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (E{sub AF} {approx} 270 kV/cm) and that for the reverse phase transition (E{sub FA} {approx} 230 kV/cm) were measured at room temperature on samples with PLZT films of {approx}1-{micro}m thickness. Relative permittivity of {approx}560 and dielectric loss of 5000 h when the capacitors are operated at room temperature with an applied field of {approx}300 kV/cm.
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dielectric properties of plzt film on foil capacitors
Materials Letters, 2008Co-Authors: Dokyun Kwon, Manoj Narayanan, U BalachandranAbstract:We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel foils to create film-on-foil capacitor sheets. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity {approx} 1300 and dielectric loss (tan {delta}) {approx} 0.05, leakage current density of 6.6 x 10{sup ? }9 A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength > 2.4 MV/cm. Based on the hysteresis loop measurement, an energy storage density of {approx} 17 J/cm{sup 3} was obtained for such a capacitor at 50% of the mean breakdown field.
C Petrovic - One of the best experts on this subject based on the ideXlab platform.
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pauli limited upper critical field of fe1 yte1 xsex
Physical Review B, 2010Co-Authors: Hechang Lei, Eun Sang Choi, J B Warren, C PetrovicAbstract:In this work, we investigated the temperature dependence of the upper critical field {mu}{sub 0}H{sub c2}(T) of Fe1.02(3)Te0.61(4)Se0.39(4) and Fe1.05(3)Te0.89(2)Se0.11(2) single crystals by measuring the magnetotransport properties in stable dc magnetic fields up to 35 T. Both crystals show that {mu}{sub 0}H{sub c2}(T) in the ab plane and along the c-axis exhibit saturation at low temperatures. The anisotropy of {mu}{sub 0}H{sub c2}(T) decreases with decreasing temperature, becoming nearly isotropic when the temperature T {yields} 0. Furthermore, {mu}{sub 0}H{sub c2}(0) deviates from the conventional Werthamer-Helfand-Hohenberg theoretical prediction values for both field directions. Our analysis indicates that the spin-paramagnetic pair-breaking effect is responsible for the temperature-dependent behavior of {mu}{sub 0}H{sub c2}(T) in both field directions.
