The Experts below are selected from a list of 9 Experts worldwide ranked by ideXlab platform
Goutam Koley - One of the best experts on this subject based on the ideXlab platform.
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Surface Electronic Property of sic correlated with no2 adsorption
Journal of Applied Physics, 2009Co-Authors: Muhammad Qazi, Jie Liu, M V S Chandrashekhar, Goutam KoleyAbstract:Correlations between Surface Electronic properties of SiC and NO2 adsorption were investigated using electrostatic force potentiometry. It was observed that Surface work function (SWF) of both 6H and 3C–SiC changes significantly with NO2 adsorption. Measurements on semi-insulating 6H–SiC revealed that the Si face has higher sensitivity toward NO2 molecules than C face producing more change in SWF due to NO2 adsorption, which can be related with the difference in their Surface free energies. For an n+-doped 6H–SiC, the SWF of the C face was found to increase much more than the Si face, showing correspondingly higher NO2 sensitivity. Upon exposure to superbandgap ultraviolet (UV) illumination, the Surface band bending of both the faces was found to increase for undoped 6H–SiC, which resulted in enhanced sensitivity to NO2 adsorption. Measurements on doped SiC also supported similar correlations, although the Surface band bending initially decreased under UV illumination. Our results indicate that adsorption...
Muhammad Qazi - One of the best experts on this subject based on the ideXlab platform.
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Surface Electronic Property of sic correlated with no2 adsorption
Journal of Applied Physics, 2009Co-Authors: Muhammad Qazi, Jie Liu, M V S Chandrashekhar, Goutam KoleyAbstract:Correlations between Surface Electronic properties of SiC and NO2 adsorption were investigated using electrostatic force potentiometry. It was observed that Surface work function (SWF) of both 6H and 3C–SiC changes significantly with NO2 adsorption. Measurements on semi-insulating 6H–SiC revealed that the Si face has higher sensitivity toward NO2 molecules than C face producing more change in SWF due to NO2 adsorption, which can be related with the difference in their Surface free energies. For an n+-doped 6H–SiC, the SWF of the C face was found to increase much more than the Si face, showing correspondingly higher NO2 sensitivity. Upon exposure to superbandgap ultraviolet (UV) illumination, the Surface band bending of both the faces was found to increase for undoped 6H–SiC, which resulted in enhanced sensitivity to NO2 adsorption. Measurements on doped SiC also supported similar correlations, although the Surface band bending initially decreased under UV illumination. Our results indicate that adsorption...
Jie Liu - One of the best experts on this subject based on the ideXlab platform.
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Surface Electronic Property of sic correlated with no2 adsorption
Journal of Applied Physics, 2009Co-Authors: Muhammad Qazi, Jie Liu, M V S Chandrashekhar, Goutam KoleyAbstract:Correlations between Surface Electronic properties of SiC and NO2 adsorption were investigated using electrostatic force potentiometry. It was observed that Surface work function (SWF) of both 6H and 3C–SiC changes significantly with NO2 adsorption. Measurements on semi-insulating 6H–SiC revealed that the Si face has higher sensitivity toward NO2 molecules than C face producing more change in SWF due to NO2 adsorption, which can be related with the difference in their Surface free energies. For an n+-doped 6H–SiC, the SWF of the C face was found to increase much more than the Si face, showing correspondingly higher NO2 sensitivity. Upon exposure to superbandgap ultraviolet (UV) illumination, the Surface band bending of both the faces was found to increase for undoped 6H–SiC, which resulted in enhanced sensitivity to NO2 adsorption. Measurements on doped SiC also supported similar correlations, although the Surface band bending initially decreased under UV illumination. Our results indicate that adsorption...
M V S Chandrashekhar - One of the best experts on this subject based on the ideXlab platform.
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Surface Electronic Property of sic correlated with no2 adsorption
Journal of Applied Physics, 2009Co-Authors: Muhammad Qazi, Jie Liu, M V S Chandrashekhar, Goutam KoleyAbstract:Correlations between Surface Electronic properties of SiC and NO2 adsorption were investigated using electrostatic force potentiometry. It was observed that Surface work function (SWF) of both 6H and 3C–SiC changes significantly with NO2 adsorption. Measurements on semi-insulating 6H–SiC revealed that the Si face has higher sensitivity toward NO2 molecules than C face producing more change in SWF due to NO2 adsorption, which can be related with the difference in their Surface free energies. For an n+-doped 6H–SiC, the SWF of the C face was found to increase much more than the Si face, showing correspondingly higher NO2 sensitivity. Upon exposure to superbandgap ultraviolet (UV) illumination, the Surface band bending of both the faces was found to increase for undoped 6H–SiC, which resulted in enhanced sensitivity to NO2 adsorption. Measurements on doped SiC also supported similar correlations, although the Surface band bending initially decreased under UV illumination. Our results indicate that adsorption...
Nobuo Ueno - One of the best experts on this subject based on the ideXlab platform.
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Electronic density tailing outside π-conjugated polymer Surface
Applied Physics Letters, 2006Co-Authors: Xiao-tao Hao, Takuya Hosokai, N. Mitsuo, Satoshi Kera, Kazuhiko Mase, K. K. Okudaira, Nobuo UenoAbstract:Penning ionization electron spectroscopy (PIES) was adopted to examine Surface Electronic Property of conjugated poly(3-hexylthiophene) (P3HT) aiming to detect the Electronic density tailing outside a polymer Surface. The Electronic wave function of the highest occupied molecular orbital (HOMO) state is shielded by side hexyl chain for a P3HT film with edge-on conformation and was not detected by PIES, while it is tailing outside the polymer Surface for face-on conformation and was observed clearly by PIES. The presence of HOMO Electronic wave function outside the polymer Surface makes it possible to form HOMO-HOMO overlapping with overlayer materials, and therefore more efficient charge transfer is expected in a heterojunction structure for device application.