The Experts below are selected from a list of 1221 Experts worldwide ranked by ideXlab platform
Aitor Vazquez - One of the best experts on this subject based on the ideXlab platform.
-
improving the efficiency of sic based Synchronous Boost Converter under variable switching frequency tcm and different input output voltage ratios
IEEE Transactions on Industry Applications, 2019Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G LamarAbstract:This article is focused on the design of a high-voltage (800 V) bidirectional Boost Converter with high efficiency at medium-low power levels. Triangular current mode (TCM) enhances the efficiency of the Converter at low power, thanks to soft-switching operation, but it requires variable switching frequency and large current ripple through the inductor. The former can be implemented by using silicon carbide (SiC) mosfet s and the latter can be minimized by using interleaved modules. At low power, TCM requires high switching frequency, a minimum negative inductor current, and a minimum deadtime to obtain zero voltage switching. These values vary for different input/output voltage ratios and must be properly selected to reduce deadtime losses, normally neglected in the literature since it is assumed that they have low impact. However, it can be relevant at high frequencies (especially for devices with high reverse conduction voltage drop, such as SiC mosfet s). In this article, deadtime losses are included in the proposed losses models and the selection of optimum values of deadtime and minimum inductor current to minimize these deadtime losses are analytically evaluated and experimentally validated.
-
event focused control strategy for a sic based Synchronous Boost Converter working at different conduction modes
Workshop on Control and Modeling for Power Electronics, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400V to 800V and 10kW with high efficiency, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1kV (previously avoided due to the high switching losses introduced by silicon IGBTs). Evaluation of all the power losses in the Converter for different conduction modes is fulfilled. Since the model of losses predicts suitable performance of QSW-ZVS conduction mode for low and medium loads, an event control strategy will be detailed taking advantage of digital control. This methodology will also allow self-regulating modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, a control strategy based on events and switching among modes is proposed to maintain high efficiency in a wide power range.
-
modelling the performance of a sic based Synchronous Boost Converter using different conduction modes
Applied Power Electronics Conference, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400 V to 800 V and 10 kW with high efficiency in a wide power range, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1 kV (previously avoided due to the high switching losses introduced by silicon IGBTs). The distribution of the Converter losses at different conduction modes and frequencies is evaluated. Moreover, digital control makes easier modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, different operation modes (conduction mode and switching frequency) for different loads are compared in order to provide a design guide to optimize the Converter performance in all the power range.
-
Synchronous Boost Converter with high efficiency at light load using qsw zvs and sic mosfets
IEEE Transactions on Industrial Electronics, 2018Co-Authors: Alberto Rodriguez, Aitor Vazquez, Maria R Rogina, Fernando BrizAbstract:A Converter intended to be used for the interconnection of battery-based energy storage systems with the cells of a multilevel Converter is addressed in this paper. High efficiency at light and medium loads is important in these applications and it can be achieved using soft switching techniques. Two control techniques with fixed and variable switching frequency are proposed and compared. The use of silicon carbide (SiC) mosfet s provides a higher attainable switching frequency, which is especially interesting in variable frequency control techniques, allowing the operation at high voltages and high switching frequencies, with high efficiencies over a wide power range. A Synchronous Boost DC/DC Converter rated for 400 to 800 V and 10 kW is designed and developed with SiC mosfet s obtaining efficiencies higher than 97% from 100% to 3.5% of full load using a variable switching frequency (up to 200 kHz) control. Significant efficiency improvement is achieved at medium and light loads.
-
different modular techniques applied in a Synchronous Boost Converter with sic mosfets to obtain high efficiency at light load and low current ripple
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Aitor Vazquez, Alberto Rodriguez, Maria R Rogina, Diego G LamarAbstract:This paper is focused on a high-voltage (400 to 800 V) bidirectional Converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel Converter, providing distributed energy-storage capability to a solid-state transformer. This Converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a Synchronous Boost Converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular Converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel–output-parallel Synchronous Boost Converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques.
Alberto Rodriguez - One of the best experts on this subject based on the ideXlab platform.
-
improving the efficiency of sic based Synchronous Boost Converter under variable switching frequency tcm and different input output voltage ratios
IEEE Transactions on Industry Applications, 2019Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G LamarAbstract:This article is focused on the design of a high-voltage (800 V) bidirectional Boost Converter with high efficiency at medium-low power levels. Triangular current mode (TCM) enhances the efficiency of the Converter at low power, thanks to soft-switching operation, but it requires variable switching frequency and large current ripple through the inductor. The former can be implemented by using silicon carbide (SiC) mosfet s and the latter can be minimized by using interleaved modules. At low power, TCM requires high switching frequency, a minimum negative inductor current, and a minimum deadtime to obtain zero voltage switching. These values vary for different input/output voltage ratios and must be properly selected to reduce deadtime losses, normally neglected in the literature since it is assumed that they have low impact. However, it can be relevant at high frequencies (especially for devices with high reverse conduction voltage drop, such as SiC mosfet s). In this article, deadtime losses are included in the proposed losses models and the selection of optimum values of deadtime and minimum inductor current to minimize these deadtime losses are analytically evaluated and experimentally validated.
-
event focused control strategy for a sic based Synchronous Boost Converter working at different conduction modes
Workshop on Control and Modeling for Power Electronics, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400V to 800V and 10kW with high efficiency, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1kV (previously avoided due to the high switching losses introduced by silicon IGBTs). Evaluation of all the power losses in the Converter for different conduction modes is fulfilled. Since the model of losses predicts suitable performance of QSW-ZVS conduction mode for low and medium loads, an event control strategy will be detailed taking advantage of digital control. This methodology will also allow self-regulating modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, a control strategy based on events and switching among modes is proposed to maintain high efficiency in a wide power range.
-
modelling the performance of a sic based Synchronous Boost Converter using different conduction modes
Applied Power Electronics Conference, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400 V to 800 V and 10 kW with high efficiency in a wide power range, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1 kV (previously avoided due to the high switching losses introduced by silicon IGBTs). The distribution of the Converter losses at different conduction modes and frequencies is evaluated. Moreover, digital control makes easier modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, different operation modes (conduction mode and switching frequency) for different loads are compared in order to provide a design guide to optimize the Converter performance in all the power range.
-
Synchronous Boost Converter with high efficiency at light load using qsw zvs and sic mosfets
IEEE Transactions on Industrial Electronics, 2018Co-Authors: Alberto Rodriguez, Aitor Vazquez, Maria R Rogina, Fernando BrizAbstract:A Converter intended to be used for the interconnection of battery-based energy storage systems with the cells of a multilevel Converter is addressed in this paper. High efficiency at light and medium loads is important in these applications and it can be achieved using soft switching techniques. Two control techniques with fixed and variable switching frequency are proposed and compared. The use of silicon carbide (SiC) mosfet s provides a higher attainable switching frequency, which is especially interesting in variable frequency control techniques, allowing the operation at high voltages and high switching frequencies, with high efficiencies over a wide power range. A Synchronous Boost DC/DC Converter rated for 400 to 800 V and 10 kW is designed and developed with SiC mosfet s obtaining efficiencies higher than 97% from 100% to 3.5% of full load using a variable switching frequency (up to 200 kHz) control. Significant efficiency improvement is achieved at medium and light loads.
-
different modular techniques applied in a Synchronous Boost Converter with sic mosfets to obtain high efficiency at light load and low current ripple
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Aitor Vazquez, Alberto Rodriguez, Maria R Rogina, Diego G LamarAbstract:This paper is focused on a high-voltage (400 to 800 V) bidirectional Converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel Converter, providing distributed energy-storage capability to a solid-state transformer. This Converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a Synchronous Boost Converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular Converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel–output-parallel Synchronous Boost Converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques.
Maria R Rogina - One of the best experts on this subject based on the ideXlab platform.
-
improving the efficiency of sic based Synchronous Boost Converter under variable switching frequency tcm and different input output voltage ratios
IEEE Transactions on Industry Applications, 2019Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G LamarAbstract:This article is focused on the design of a high-voltage (800 V) bidirectional Boost Converter with high efficiency at medium-low power levels. Triangular current mode (TCM) enhances the efficiency of the Converter at low power, thanks to soft-switching operation, but it requires variable switching frequency and large current ripple through the inductor. The former can be implemented by using silicon carbide (SiC) mosfet s and the latter can be minimized by using interleaved modules. At low power, TCM requires high switching frequency, a minimum negative inductor current, and a minimum deadtime to obtain zero voltage switching. These values vary for different input/output voltage ratios and must be properly selected to reduce deadtime losses, normally neglected in the literature since it is assumed that they have low impact. However, it can be relevant at high frequencies (especially for devices with high reverse conduction voltage drop, such as SiC mosfet s). In this article, deadtime losses are included in the proposed losses models and the selection of optimum values of deadtime and minimum inductor current to minimize these deadtime losses are analytically evaluated and experimentally validated.
-
event focused control strategy for a sic based Synchronous Boost Converter working at different conduction modes
Workshop on Control and Modeling for Power Electronics, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400V to 800V and 10kW with high efficiency, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1kV (previously avoided due to the high switching losses introduced by silicon IGBTs). Evaluation of all the power losses in the Converter for different conduction modes is fulfilled. Since the model of losses predicts suitable performance of QSW-ZVS conduction mode for low and medium loads, an event control strategy will be detailed taking advantage of digital control. This methodology will also allow self-regulating modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, a control strategy based on events and switching among modes is proposed to maintain high efficiency in a wide power range.
-
modelling the performance of a sic based Synchronous Boost Converter using different conduction modes
Applied Power Electronics Conference, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400 V to 800 V and 10 kW with high efficiency in a wide power range, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1 kV (previously avoided due to the high switching losses introduced by silicon IGBTs). The distribution of the Converter losses at different conduction modes and frequencies is evaluated. Moreover, digital control makes easier modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, different operation modes (conduction mode and switching frequency) for different loads are compared in order to provide a design guide to optimize the Converter performance in all the power range.
-
Synchronous Boost Converter with high efficiency at light load using qsw zvs and sic mosfets
IEEE Transactions on Industrial Electronics, 2018Co-Authors: Alberto Rodriguez, Aitor Vazquez, Maria R Rogina, Fernando BrizAbstract:A Converter intended to be used for the interconnection of battery-based energy storage systems with the cells of a multilevel Converter is addressed in this paper. High efficiency at light and medium loads is important in these applications and it can be achieved using soft switching techniques. Two control techniques with fixed and variable switching frequency are proposed and compared. The use of silicon carbide (SiC) mosfet s provides a higher attainable switching frequency, which is especially interesting in variable frequency control techniques, allowing the operation at high voltages and high switching frequencies, with high efficiencies over a wide power range. A Synchronous Boost DC/DC Converter rated for 400 to 800 V and 10 kW is designed and developed with SiC mosfet s obtaining efficiencies higher than 97% from 100% to 3.5% of full load using a variable switching frequency (up to 200 kHz) control. Significant efficiency improvement is achieved at medium and light loads.
-
different modular techniques applied in a Synchronous Boost Converter with sic mosfets to obtain high efficiency at light load and low current ripple
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Aitor Vazquez, Alberto Rodriguez, Maria R Rogina, Diego G LamarAbstract:This paper is focused on a high-voltage (400 to 800 V) bidirectional Converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel Converter, providing distributed energy-storage capability to a solid-state transformer. This Converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a Synchronous Boost Converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular Converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel–output-parallel Synchronous Boost Converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques.
Diego G Lamar - One of the best experts on this subject based on the ideXlab platform.
-
improving the efficiency of sic based Synchronous Boost Converter under variable switching frequency tcm and different input output voltage ratios
IEEE Transactions on Industry Applications, 2019Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G LamarAbstract:This article is focused on the design of a high-voltage (800 V) bidirectional Boost Converter with high efficiency at medium-low power levels. Triangular current mode (TCM) enhances the efficiency of the Converter at low power, thanks to soft-switching operation, but it requires variable switching frequency and large current ripple through the inductor. The former can be implemented by using silicon carbide (SiC) mosfet s and the latter can be minimized by using interleaved modules. At low power, TCM requires high switching frequency, a minimum negative inductor current, and a minimum deadtime to obtain zero voltage switching. These values vary for different input/output voltage ratios and must be properly selected to reduce deadtime losses, normally neglected in the literature since it is assumed that they have low impact. However, it can be relevant at high frequencies (especially for devices with high reverse conduction voltage drop, such as SiC mosfet s). In this article, deadtime losses are included in the proposed losses models and the selection of optimum values of deadtime and minimum inductor current to minimize these deadtime losses are analytically evaluated and experimentally validated.
-
event focused control strategy for a sic based Synchronous Boost Converter working at different conduction modes
Workshop on Control and Modeling for Power Electronics, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400V to 800V and 10kW with high efficiency, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1kV (previously avoided due to the high switching losses introduced by silicon IGBTs). Evaluation of all the power losses in the Converter for different conduction modes is fulfilled. Since the model of losses predicts suitable performance of QSW-ZVS conduction mode for low and medium loads, an event control strategy will be detailed taking advantage of digital control. This methodology will also allow self-regulating modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, a control strategy based on events and switching among modes is proposed to maintain high efficiency in a wide power range.
-
modelling the performance of a sic based Synchronous Boost Converter using different conduction modes
Applied Power Electronics Conference, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400 V to 800 V and 10 kW with high efficiency in a wide power range, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1 kV (previously avoided due to the high switching losses introduced by silicon IGBTs). The distribution of the Converter losses at different conduction modes and frequencies is evaluated. Moreover, digital control makes easier modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, different operation modes (conduction mode and switching frequency) for different loads are compared in order to provide a design guide to optimize the Converter performance in all the power range.
-
different modular techniques applied in a Synchronous Boost Converter with sic mosfets to obtain high efficiency at light load and low current ripple
IEEE Transactions on Industrial Electronics, 2017Co-Authors: Aitor Vazquez, Alberto Rodriguez, Maria R Rogina, Diego G LamarAbstract:This paper is focused on a high-voltage (400 to 800 V) bidirectional Converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel Converter, providing distributed energy-storage capability to a solid-state transformer. This Converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a Synchronous Boost Converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular Converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel–output-parallel Synchronous Boost Converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques.
M M Hernando - One of the best experts on this subject based on the ideXlab platform.
-
event focused control strategy for a sic based Synchronous Boost Converter working at different conduction modes
Workshop on Control and Modeling for Power Electronics, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400V to 800V and 10kW with high efficiency, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1kV (previously avoided due to the high switching losses introduced by silicon IGBTs). Evaluation of all the power losses in the Converter for different conduction modes is fulfilled. Since the model of losses predicts suitable performance of QSW-ZVS conduction mode for low and medium loads, an event control strategy will be detailed taking advantage of digital control. This methodology will also allow self-regulating modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, a control strategy based on events and switching among modes is proposed to maintain high efficiency in a wide power range.
-
modelling the performance of a sic based Synchronous Boost Converter using different conduction modes
Applied Power Electronics Conference, 2018Co-Authors: Maria R Rogina, Aitor Vazquez, Alberto Rodriguez, Diego G Lamar, M M HernandoAbstract:A SiC-based Synchronous Boost DC/DC Converter rated for 400 V to 800 V and 10 kW with high efficiency in a wide power range, especially at medium and light load, is designed and developed. The better switching performance of SiC MOSFETs allows the use of high switching frequency operation modes even at voltage close to 1 kV (previously avoided due to the high switching losses introduced by silicon IGBTs). The distribution of the Converter losses at different conduction modes and frequencies is evaluated. Moreover, digital control makes easier modifications of the operation mode in order to optimize the efficiency for different loads. Consequently, different operation modes (conduction mode and switching frequency) for different loads are compared in order to provide a design guide to optimize the Converter performance in all the power range.
-
inductor optimization for multiphase interleaved Synchronous bidirectional Boost Converter working in discontinuous conduction mode with zero voltage switching
Energy Conversion Congress and Exposition, 2013Co-Authors: Aitor Vazquez, Alberto Rodriguez, Kevin Martin, Manuel Arias, M M HernandoAbstract:Multiphase interleaved Synchronous Boost Converter is one of the most interesting topologies for non-isolated bidirectional applications regarding its high efficiency, reliability and few components. Focusing on the increase of efficiency, this Converter can work in Discontinuous Conduction Mode (DCM) but close to Boundary Conduction Mode (BCM) to achieve soft switching condition. Nevertheless the main disadvantage of this particular control mode is the complexity of the inductor design. First, the inductors have to conduct a high current ripple due to get a negative current value that warranties soft switching condition. Second, the inductor value is low and a large air gap is needed, so parasitic effects like fringing have to be considered in loss calculation. Taking into account these two conditions, three different inductor winding designs are presented in this paper in order to optimize the overall efficiency in a multiphase interleaved bidirectional Boost Converter. A theoretical comparison for each inductor design is presented. Moreover, simulation results for equivalent flux and magnetic field using 3D FEM software tool (PExprt) are also done. The theoretical and simulated results for the three proposed winding designs are verified with a two phase bidirectional Synchronous Boost Converter prototype of 1 kW.
